GB8502348D0 - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
GB8502348D0
GB8502348D0 GB858502348A GB8502348A GB8502348D0 GB 8502348 D0 GB8502348 D0 GB 8502348D0 GB 858502348 A GB858502348 A GB 858502348A GB 8502348 A GB8502348 A GB 8502348A GB 8502348 D0 GB8502348 D0 GB 8502348D0
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858502348A
Other versions
GB2153589B (en
GB2153589A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB8502348D0 publication Critical patent/GB8502348D0/en
Publication of GB2153589A publication Critical patent/GB2153589A/en
Application granted granted Critical
Publication of GB2153589B publication Critical patent/GB2153589B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
GB08502348A 1984-01-30 1985-01-30 Thin film transistor Expired GB2153589B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1676384A JPS60160173A (en) 1984-01-30 1984-01-30 Thin film transistor

Publications (3)

Publication Number Publication Date
GB8502348D0 true GB8502348D0 (en) 1985-02-27
GB2153589A GB2153589A (en) 1985-08-21
GB2153589B GB2153589B (en) 1988-10-12

Family

ID=11925260

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08502348A Expired GB2153589B (en) 1984-01-30 1985-01-30 Thin film transistor
GB08723748A Expired GB2197985B (en) 1984-01-30 1987-10-09 Liquid crystal display

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08723748A Expired GB2197985B (en) 1984-01-30 1987-10-09 Liquid crystal display

Country Status (3)

Country Link
JP (1) JPS60160173A (en)
DE (1) DE3502911A1 (en)
GB (2) GB2153589B (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593327B1 (en) * 1986-01-23 1988-10-28 Commissariat Energie Atomique METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING TWO OR THREE LEVELS OF MASKING
JPH0766253B2 (en) * 1986-06-20 1995-07-19 松下電器産業株式会社 Matrix type image display device
FR2605442B1 (en) * 1986-10-17 1988-12-09 Thomson Csf ELECTROOPTIC VISUALIZATION SCREEN WITH CONTROL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
JPS63166236A (en) * 1986-12-26 1988-07-09 Toshiba Corp Electronic device
JPH01173650A (en) * 1987-12-26 1989-07-10 Seikosha Co Ltd Manufacture of amorphous silicon thin-film transistor
WO1989009494A1 (en) * 1988-03-31 1989-10-05 Solarex Corporation Gate dielectric for a thin film field effect transistor
FR2631743A1 (en) * 1988-05-23 1989-11-24 Gen Electric STRUCTURE WITH NON-COPLANAR ELECTRODES FOR LIQUID CRYSTAL MATRIX DISPLAY WITH AMORPHOUS SILICON THIN FILM TRANSISTORS AND MANUFACTURING METHOD
JPH0283981A (en) * 1988-09-21 1990-03-26 Fuji Xerox Co Ltd Thin film transistor
JPH0348463A (en) * 1989-03-01 1991-03-01 Mitsubishi Electric Corp Thin film transistor
DE69107101T2 (en) 1990-02-06 1995-05-24 Semiconductor Energy Lab Method of making an oxide film.
EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
EP0535979A3 (en) * 1991-10-02 1993-07-21 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
JP3369055B2 (en) * 1996-09-06 2003-01-20 シャープ株式会社 Thin film semiconductor device and method of manufacturing the same
US5959312A (en) * 1996-09-27 1999-09-28 Xerox Corporation Sensor with doped microcrystalline silicon channel leads with bubble formation protection means
US5814530A (en) * 1996-09-27 1998-09-29 Xerox Corporation Producing a sensor with doped microcrystalline silicon channel leads
JP3683463B2 (en) 1999-03-11 2005-08-17 シャープ株式会社 Active matrix substrate, manufacturing method thereof, and image sensor using the substrate
JP3916823B2 (en) 1999-04-07 2007-05-23 シャープ株式会社 Active matrix substrate, manufacturing method thereof, and flat panel image sensor
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102097932B1 (en) 2009-07-31 2020-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102473734B (en) 2009-07-31 2015-08-12 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
KR101799252B1 (en) 2009-07-31 2017-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101073543B1 (en) * 2009-09-04 2011-10-17 삼성모바일디스플레이주식회사 Organic light emitting diode display
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102479944B1 (en) 2012-04-13 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry
GB2064866A (en) * 1979-11-30 1981-06-17 Gen Electric Co Ltd Field effect semiconductor device
JPS5679472A (en) * 1979-12-04 1981-06-30 Toshiba Corp Preparing method of mos-type semiconductor device
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
JPS58147069A (en) * 1982-02-25 1983-09-01 Sharp Corp Thin film transistor

Also Published As

Publication number Publication date
GB2153589B (en) 1988-10-12
GB8723748D0 (en) 1987-11-11
DE3502911A1 (en) 1985-08-01
JPS60160173A (en) 1985-08-21
GB2153589A (en) 1985-08-21
GB2197985A (en) 1988-06-02
GB2197985B (en) 1988-10-12

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20050129