GB835583A - Improvements relating to the formation of metal contacts on silicon - Google Patents

Improvements relating to the formation of metal contacts on silicon

Info

Publication number
GB835583A
GB835583A GB20657A GB20657A GB835583A GB 835583 A GB835583 A GB 835583A GB 20657 A GB20657 A GB 20657A GB 20657 A GB20657 A GB 20657A GB 835583 A GB835583 A GB 835583A
Authority
GB
United Kingdom
Prior art keywords
silicon
tin
lead
formation
metal contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20657A
Other languages
English (en)
Inventor
Ronald Charles Newman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB20657A priority Critical patent/GB835583A/en
Priority to FR1189406D priority patent/FR1189406A/fr
Publication of GB835583A publication Critical patent/GB835583A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Contacts (AREA)
GB20657A 1957-01-02 1957-01-02 Improvements relating to the formation of metal contacts on silicon Expired GB835583A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB20657A GB835583A (en) 1957-01-02 1957-01-02 Improvements relating to the formation of metal contacts on silicon
FR1189406D FR1189406A (fr) 1957-01-02 1957-12-31 Contacts électriques perfectionnés avec le silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20657A GB835583A (en) 1957-01-02 1957-01-02 Improvements relating to the formation of metal contacts on silicon

Publications (1)

Publication Number Publication Date
GB835583A true GB835583A (en) 1960-05-25

Family

ID=9700276

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20657A Expired GB835583A (en) 1957-01-02 1957-01-02 Improvements relating to the formation of metal contacts on silicon

Country Status (2)

Country Link
FR (1) FR1189406A (fr)
GB (1) GB835583A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3149396A (en) * 1959-12-22 1964-09-22 Hughes Aircraft Co Method of making semiconductor assemblies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3149396A (en) * 1959-12-22 1964-09-22 Hughes Aircraft Co Method of making semiconductor assemblies

Also Published As

Publication number Publication date
FR1189406A (fr) 1959-10-02

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