GB830392A - Improvements in or relating to cathodic sputtering - Google Patents
Improvements in or relating to cathodic sputteringInfo
- Publication number
- GB830392A GB830392A GB1546656A GB1546656A GB830392A GB 830392 A GB830392 A GB 830392A GB 1546656 A GB1546656 A GB 1546656A GB 1546656 A GB1546656 A GB 1546656A GB 830392 A GB830392 A GB 830392A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- electrode
- sputtering
- cadmium
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A method of depositing by cathode sputtering a film which consists of an alloy or of a mixture of substances, comprises supporting a shaped electrode of each of the substances in a sputtering chamber in angularly spaced relation one with another and with respect to the axis of rotation of a rotating work table upon which the workpiece is supported, the electrodes being also axially spaced from the table, and connecting each electrode to a source of high voltage current, thereby to produce a glow discharge from each electrode and deposit an alloyed or composite film of the substances upon the workpiece. The current source may be (1) D.C., the electrodes being connected in parallel to the negative terminal thereof, (2) single-phase A.C., there being two dissimilar electrodes connected to each side thereof, or (3) three-phase A.C., there being three electrodes each connected to one of the terminals thereof. If a larger number of electrodes is used with an A.C. source, the system should be made symmetrical so as to give the same electrical characteristics on each half cycle. The electrodes are preferably sector-shaped with the included angle adjacent to the axis of rotation. Specifically disclosed are the production of (1) a brass film using a copper electrode and a zinc electrode, (2) a film containing tin oxide + antinmony by sputtering from tin and antimony electrodes in an oxygen atmosphere, (3) a resistor coating of gold + bismuth oxide on glass or ceramic by sputtering from gold and bismuth electrodes in air, and (4) a film containing cadmium and cadmium oxide by sputtering from a pure cadmium electrode and an oxidized cadmium electrode in argon. Sputtering may also be performed in atmospheres containing nitrogen, sulphur or halides. Specification 830,391 is referred to.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1546656A GB830392A (en) | 1956-05-17 | 1956-05-17 | Improvements in or relating to cathodic sputtering |
DEE14137A DE1181519B (en) | 1956-05-17 | 1957-05-16 | Process to deposit a coating of two or more substances on a workpiece by means of cathode atomization, as well as device for carrying out the process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1546656A GB830392A (en) | 1956-05-17 | 1956-05-17 | Improvements in or relating to cathodic sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
GB830392A true GB830392A (en) | 1960-03-16 |
Family
ID=10059623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1546656A Expired GB830392A (en) | 1956-05-17 | 1956-05-17 | Improvements in or relating to cathodic sputtering |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1181519B (en) |
GB (1) | GB830392A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3235476A (en) * | 1960-04-18 | 1966-02-15 | Gen Motors Corp | Method of producing ohmic contacts on semiconductors |
US3418229A (en) * | 1965-06-30 | 1968-12-24 | Weston Instruments Inc | Method of forming films of compounds having at least two anions by cathode sputtering |
US3420763A (en) * | 1966-05-06 | 1969-01-07 | Bell Telephone Labor Inc | Cathodic sputtering of films of stoichiometric zinc oxide |
US3477936A (en) * | 1967-06-29 | 1969-11-11 | Ppg Industries Inc | Sputtering of metals in an atmosphere of fluorine and oxygen |
US4060471A (en) * | 1975-05-19 | 1977-11-29 | Rca Corporation | Composite sputtering method |
US4279726A (en) * | 1980-06-23 | 1981-07-21 | Gte Laboratories Incorporated | Process for making electroluminescent films and devices |
US4545881A (en) * | 1977-05-19 | 1985-10-08 | Canon Kabushiki Kaisha | Method for producing electro-thermal transducer |
EP1046727A2 (en) * | 1999-04-23 | 2000-10-25 | Nippon Sheet Glass Co. Ltd. | Method of film deposition on substrate surface and substrate produced by the method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3616401A (en) * | 1966-06-30 | 1971-10-26 | Texas Instruments Inc | Sputtered multilayer ohmic molygold contacts for semiconductor devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE675731C (en) * | 1935-10-06 | 1939-05-17 | Bernhard Berghaus | Process for the production of homogeneous layers or bodies from metals on a base body by cathode sputtering, thermal evaporation or thermal decomposition of metal compounds |
-
1956
- 1956-05-17 GB GB1546656A patent/GB830392A/en not_active Expired
-
1957
- 1957-05-16 DE DEE14137A patent/DE1181519B/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3235476A (en) * | 1960-04-18 | 1966-02-15 | Gen Motors Corp | Method of producing ohmic contacts on semiconductors |
US3418229A (en) * | 1965-06-30 | 1968-12-24 | Weston Instruments Inc | Method of forming films of compounds having at least two anions by cathode sputtering |
US3420763A (en) * | 1966-05-06 | 1969-01-07 | Bell Telephone Labor Inc | Cathodic sputtering of films of stoichiometric zinc oxide |
US3477936A (en) * | 1967-06-29 | 1969-11-11 | Ppg Industries Inc | Sputtering of metals in an atmosphere of fluorine and oxygen |
US4060471A (en) * | 1975-05-19 | 1977-11-29 | Rca Corporation | Composite sputtering method |
US4545881A (en) * | 1977-05-19 | 1985-10-08 | Canon Kabushiki Kaisha | Method for producing electro-thermal transducer |
US4279726A (en) * | 1980-06-23 | 1981-07-21 | Gte Laboratories Incorporated | Process for making electroluminescent films and devices |
EP1046727A2 (en) * | 1999-04-23 | 2000-10-25 | Nippon Sheet Glass Co. Ltd. | Method of film deposition on substrate surface and substrate produced by the method |
EP1046727A3 (en) * | 1999-04-23 | 2003-11-26 | Nippon Sheet Glass Co. Ltd. | Method of film deposition on substrate surface and substrate produced by the method |
Also Published As
Publication number | Publication date |
---|---|
DE1181519B (en) | 1964-11-12 |
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