GB795877A - Improvements in devices for amplifying or converting radiation - Google Patents
Improvements in devices for amplifying or converting radiationInfo
- Publication number
- GB795877A GB795877A GB1525655A GB1525655A GB795877A GB 795877 A GB795877 A GB 795877A GB 1525655 A GB1525655 A GB 1525655A GB 1525655 A GB1525655 A GB 1525655A GB 795877 A GB795877 A GB 795877A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- wafer
- layers
- conducting
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 abstract 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001427 coherent effect Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000005365 phosphate glass Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
- 239000002966 varnish Substances 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical class [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
795,877. Photo-conductive devices. BRITISH THOMSON-HOUSTON CO., Ltd. May 14, 1956 [May 26, 1955], No. 15256/55. Class 37. [Also in Group XL (a)] The photo-conductive and phosphor materials of a radiation amplifier or converter are dispersed in glass as layers separated by a coherent wafer of high specific inductive capacity. A wafer 11 of pojycrystalline titanium dioxide or barium titanate has a photo-conducting layer 10, e.g. selenilun, antimony trisulphide or cadmium sulphide, formed on one side and on the other an electroluminescent layer 14, e.g. copper or manganeseactivated zinc sulphide. Transparent conductive layers 12, 15 are formed on opposite sides of the wafer and carry terminals 13, 16 respectively. An opaque layer of high resistivity or of low resistivity material applied as discrete areas or suspended in a methacrylate resin, may be interposed between layers 10, 14 to prevent feedback. The photo-conducting and phosphor materials may be finely-divided and dispersed in a boro-phosphate glass of low melting point. The conducting layers 12, 15 may be formed on glass plates acting as supports for the wafer (Fig. 2, not shown). A moisture sealing coating of varnish or resin may cover the assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1525655A GB795877A (en) | 1955-05-26 | 1955-05-26 | Improvements in devices for amplifying or converting radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1525655A GB795877A (en) | 1955-05-26 | 1955-05-26 | Improvements in devices for amplifying or converting radiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB795877A true GB795877A (en) | 1958-06-04 |
Family
ID=10055825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1525655A Expired GB795877A (en) | 1955-05-26 | 1955-05-26 | Improvements in devices for amplifying or converting radiation |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB795877A (en) |
-
1955
- 1955-05-26 GB GB1525655A patent/GB795877A/en not_active Expired
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