GB792724A - Improvements in or relating to methods of growing quartz crystals - Google Patents

Improvements in or relating to methods of growing quartz crystals

Info

Publication number
GB792724A
GB792724A GB13753/53A GB1375353A GB792724A GB 792724 A GB792724 A GB 792724A GB 13753/53 A GB13753/53 A GB 13753/53A GB 1375353 A GB1375353 A GB 1375353A GB 792724 A GB792724 A GB 792724A
Authority
GB
United Kingdom
Prior art keywords
aqueous medium
flint
concentration
seeds
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13753/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB13753/53A priority Critical patent/GB792724A/en
Priority to DEG14438A priority patent/DE1051822B/en
Publication of GB792724A publication Critical patent/GB792724A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B1/00—Preparing the batches
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Hydroponics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Quartz crystals are grown from seeds at high temperatures and pressures using flint as nutrient material in an aqueous medium containing sodium carbonate in a concentration of 0.5-3.0 N, sodium hydroxide in a concentration of 0.4-2.0 N, and sodium fluoride in a concentration <PICT:0792724/III/1> of 0.01-0.3 N. The temperature of the aqueous medium is in the range 320-400 DEG C and the temperature around the quartz seeds 5-20 DEG C. lower than that in the neighbourhood of the nutrient material. The aqueous medium fills from 0.68-0.85 of the free space in the pressure vessel. The Figure shows an autoclave 1 with cap 2 and sealing ring 4 resting on a hot plate 10 and surrounded by heat insulation 12, 11. A quantity of flint 16 of such mass and surface area to ensure the required rate of dissolution and growth is placed in the bottom of the autoclave and two Z-cut quartz seeds suspended by platinium wires from a thin steel disc 15 carried by the sealing ring 4. In examples, growth rates on each growing face about 10.8 mm. in 27 days and about 13 mm. in 25 days on seed crystals 2 X 30 X 30 mm. were obtained. It is suggested that the presence of traces of aluminium in grown crystals, resulting from the use of flint as nutrient, results in strains and flaws, the constitution of the aqueous medium employed being designed to prevent these imperfections.
GB13753/53A 1953-05-15 1953-05-15 Improvements in or relating to methods of growing quartz crystals Expired GB792724A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB13753/53A GB792724A (en) 1953-05-15 1953-05-15 Improvements in or relating to methods of growing quartz crystals
DEG14438A DE1051822B (en) 1953-05-15 1954-05-15 Process for making quartz crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13753/53A GB792724A (en) 1953-05-15 1953-05-15 Improvements in or relating to methods of growing quartz crystals

Publications (1)

Publication Number Publication Date
GB792724A true GB792724A (en) 1958-04-02

Family

ID=10028742

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13753/53A Expired GB792724A (en) 1953-05-15 1953-05-15 Improvements in or relating to methods of growing quartz crystals

Country Status (2)

Country Link
DE (1) DE1051822B (en)
GB (1) GB792724A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135603A (en) * 1982-03-11 1992-08-04 The United States Of America As Represented By The United States Department Of Energy Quartz crystal growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB682203A (en) * 1949-05-21 1952-11-05 Brush Dev Co Process for growing a single crystal of quartz

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135603A (en) * 1982-03-11 1992-08-04 The United States Of America As Represented By The United States Department Of Energy Quartz crystal growth

Also Published As

Publication number Publication date
DE1051822B (en) 1959-03-05

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