GB793891A - Quartz crystal - Google Patents

Quartz crystal

Info

Publication number
GB793891A
GB793891A GB6594/56A GB659456A GB793891A GB 793891 A GB793891 A GB 793891A GB 6594/56 A GB6594/56 A GB 6594/56A GB 659456 A GB659456 A GB 659456A GB 793891 A GB793891 A GB 793891A
Authority
GB
United Kingdom
Prior art keywords
crystals
quartz
neighbourhood
grown
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6594/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Publication of GB793891A publication Critical patent/GB793891A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Single crystals of alpha quartz containing from 0.05 to 1 per cent by weight of germanium dioxide, are grown on quartz seed crystals in a autoclave containing small pieces of quartz supply material, an aqueous solution of sodium hydroxide, and germanium dioxide. The autoclave is heated so that a temperature of 345 DEG to 350 DEG C. is maintained in the neighbourhood of the seeds, and a temperature 35 DEG to 40 DEG C. higher in the neighbourhood of the supply material. The pressure is 5000 to 6000 p.s.i. and the crystals are grown for 2 1/2 months. Piezoelectric resonator plates are cut from the crystals in such a manner that the normals to the major surfaces of the plates lie in crystallographic YZ planes of the crystalline material and make angles of 34 DEG to 36 DEG 301 with the Y axes. Specifications 761,531 and 761,643 are referred to.
GB6594/56A 1955-03-03 1956-03-02 Quartz crystal Expired GB793891A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US793891XA 1955-03-03 1955-03-03

Publications (1)

Publication Number Publication Date
GB793891A true GB793891A (en) 1958-04-23

Family

ID=22150235

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6594/56A Expired GB793891A (en) 1955-03-03 1956-03-02 Quartz crystal

Country Status (1)

Country Link
GB (1) GB793891A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1190443B (en) * 1961-12-20 1965-04-08 Western Electric Co Process for the production of synthetic quartz crystals
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1190443B (en) * 1961-12-20 1965-04-08 Western Electric Co Process for the production of synthetic quartz crystals
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same
US5879811A (en) * 1994-07-18 1999-03-09 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure

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