GB779666A - Improvements relating to p-n junction devices and to their methods of manufacture - Google Patents
Improvements relating to p-n junction devices and to their methods of manufactureInfo
- Publication number
- GB779666A GB779666A GB29394/54A GB2939454A GB779666A GB 779666 A GB779666 A GB 779666A GB 29394/54 A GB29394/54 A GB 29394/54A GB 2939454 A GB2939454 A GB 2939454A GB 779666 A GB779666 A GB 779666A
- Authority
- GB
- United Kingdom
- Prior art keywords
- melt
- indium
- type
- added
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000155 melt Substances 0.000 abstract 4
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000007654 immersion Methods 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US779666XA | 1953-10-13 | 1953-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB779666A true GB779666A (en) | 1957-07-24 |
Family
ID=22141063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB29394/54A Expired GB779666A (en) | 1953-10-13 | 1954-10-12 | Improvements relating to p-n junction devices and to their methods of manufacture |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE532474A (enrdf_load_stackoverflow) |
| FR (1) | FR1113385A (enrdf_load_stackoverflow) |
| GB (1) | GB779666A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3054033A (en) * | 1957-05-21 | 1962-09-11 | Sony Corp | Junction type semiconductor device |
| US3065115A (en) * | 1959-12-29 | 1962-11-20 | Texas Instruments Inc | Method for fabricating transistors having desired current-transfer ratios |
| US3070465A (en) * | 1957-07-26 | 1962-12-25 | Sony Corp | Method of manufacturing a grown type semiconductor device |
| US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
| US3150017A (en) * | 1957-06-29 | 1964-09-22 | Sony Corp | Doping a pulled semiconductor crystal with impurities having different diffusion coefficients |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2899343A (en) * | 1954-05-27 | 1959-08-11 | Jsion | |
| US2883313A (en) * | 1954-08-16 | 1959-04-21 | Rca Corp | Semiconductor devices |
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
| US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
| NL219673A (enrdf_load_stackoverflow) * | 1956-08-10 | |||
| US2977256A (en) * | 1956-08-16 | 1961-03-28 | Gen Electric | Semiconductor devices and methods of making same |
| NL107669C (enrdf_load_stackoverflow) * | 1956-10-01 |
-
0
- BE BE532474D patent/BE532474A/xx unknown
-
1954
- 1954-10-12 GB GB29394/54A patent/GB779666A/en not_active Expired
- 1954-10-12 FR FR1113385D patent/FR1113385A/fr not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3054033A (en) * | 1957-05-21 | 1962-09-11 | Sony Corp | Junction type semiconductor device |
| US3150017A (en) * | 1957-06-29 | 1964-09-22 | Sony Corp | Doping a pulled semiconductor crystal with impurities having different diffusion coefficients |
| US3070465A (en) * | 1957-07-26 | 1962-12-25 | Sony Corp | Method of manufacturing a grown type semiconductor device |
| US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
| US3065115A (en) * | 1959-12-29 | 1962-11-20 | Texas Instruments Inc | Method for fabricating transistors having desired current-transfer ratios |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1113385A (fr) | 1956-03-28 |
| BE532474A (enrdf_load_stackoverflow) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB779666A (en) | Improvements relating to p-n junction devices and to their methods of manufacture | |
| FR1163048A (fr) | Diffusion différentielle d'impuretés dans les semi-conducteurs | |
| SE386154B (sv) | Forfarande och apparat for framstellning av planglas, varvid glas avges till ett bad av smelt metall | |
| GB1247214A (en) | Improvements relating to the formation of single crystals | |
| GB908033A (en) | Improvements in semiconductive wafers and methods of making the same | |
| GB1520500A (en) | Process for manufacturing semi-conductors | |
| FR1221433A (fr) | Fusion du silicium dans un creuset refroidi à l'eau | |
| GB900668A (en) | Method for production of bismuth | |
| AT287220B (de) | Verfahren zum elektrischen Schmelzen von Glas und Tiefofen zur Durchführung des Verfahrens | |
| FR1243876A (fr) | Procédé pour supporter, isoler et protéger les organes d'une batterie dans le boîtier et batterie ainsi obtenue | |
| GB844685A (en) | Improvements in transistors and methods of manufacture thereof | |
| GB755845A (en) | Improvements relating to semi-conductors | |
| Kuznetsov et al. | Investigation of Low-Alloyed Alloys of Indium with Gold | |
| GB1010388A (en) | An energy transmitting device | |
| KUSMISS | Large silver halide single crystals as charged particle track detectors(Large silver halide single crystals as charged particle track detectors in regions of damaged lattice) | |
| GB944052A (en) | Improvements relating to methods of growing crystals | |
| FR1169835A (fr) | Charge d'amorçage pour capsules fulminantes et son procédé de préparation | |
| JPS52114504A (en) | Device for zone melting with hot wire | |
| JPS52120300A (en) | Gap single crystal gap making apparatus | |
| GB944153A (en) | A process for the production of semi-conductor bodies with npn or pnp junctions | |
| FR1225329A (fr) | Dispositif d'éclusage des coquilles ou creusets dans les fours de fusion sous vide | |
| GB753160A (en) | Method of making p-n crystals of germanium or silicon semiconductors | |
| GB857258A (en) | Improved method for the production of semi-conductor bodies | |
| GRIGOROVICH et al. | Kinetics of negative photoconductivity during impurity excitation of high-resistivity ZnTe-CdTe crystals(Photorecombination model explaining kinetics of negative photoconductivity effect during illumination of impurity region in high resistivity p-type ZnTe-CdTe single crystals at room temperatures) | |
| GB931692A (en) | A process for doping semi-conductor material with boron |