GB760778A - Improvements in or relating to the manufacture of single crystals - Google Patents
Improvements in or relating to the manufacture of single crystalsInfo
- Publication number
- GB760778A GB760778A GB21493/54A GB2149354A GB760778A GB 760778 A GB760778 A GB 760778A GB 21493/54 A GB21493/54 A GB 21493/54A GB 2149354 A GB2149354 A GB 2149354A GB 760778 A GB760778 A GB 760778A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vessel
- impurity atoms
- manufacture
- relating
- vibrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0760778/III/1> In the manufacture of a single semiconductor crystal by drawing from a molten mass in a vessel A, the tendency of the concentration of impurity atoms to increase is counteracted by automatically replenishing the vessel A from a vessel B in which the concentration of impurity atoms is lower. To ensure mixing of the material, the vessel A may be vibrated or the crystal may be vibrated or rotated. The passage between the two vessels can be blocked at will by a member D. A formula is given relating the relative sizes of the two vessels to the various concentrations of impurity atoms. Germanium with impurity atoms of arsenic or gallium is mentioned as the semi-conductor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE760778X | 1953-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB760778A true GB760778A (en) | 1956-11-07 |
Family
ID=6663131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21493/54A Expired GB760778A (en) | 1953-07-23 | 1954-07-23 | Improvements in or relating to the manufacture of single crystals |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB760778A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0330189A2 (en) * | 1988-02-25 | 1989-08-30 | Kabushiki Kaisha Toshiba | Semiconductor crystal pulling method |
-
1954
- 1954-07-23 GB GB21493/54A patent/GB760778A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0330189A2 (en) * | 1988-02-25 | 1989-08-30 | Kabushiki Kaisha Toshiba | Semiconductor crystal pulling method |
| EP0330189A3 (en) * | 1988-02-25 | 1989-10-25 | Kabushiki Kaisha Toshiba | Semiconductor crystal pulling method |
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