GB694026A - Electric signal translating apparatus utilizing semiconductive elements - Google Patents

Electric signal translating apparatus utilizing semiconductive elements

Info

Publication number
GB694026A
GB694026A GB12815/49A GB1281549A GB694026A GB 694026 A GB694026 A GB 694026A GB 12815/49 A GB12815/49 A GB 12815/49A GB 1281549 A GB1281549 A GB 1281549A GB 694026 A GB694026 A GB 694026A
Authority
GB
United Kingdom
Prior art keywords
electrode
emitter
absorber
semi
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12815/49A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB694026A publication Critical patent/GB694026A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
GB12815/49A 1948-05-19 1949-05-13 Electric signal translating apparatus utilizing semiconductive elements Expired GB694026A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27890A US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator

Publications (1)

Publication Number Publication Date
GB694026A true GB694026A (en) 1953-07-15

Family

ID=21840356

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12815/49A Expired GB694026A (en) 1948-05-19 1949-05-13 Electric signal translating apparatus utilizing semiconductive elements

Country Status (4)

Country Link
US (1) US2476323A (enrdf_load_stackoverflow)
FR (1) FR980994A (enrdf_load_stackoverflow)
GB (1) GB694026A (enrdf_load_stackoverflow)
NL (1) NL75792C (enrdf_load_stackoverflow)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL144803C (enrdf_load_stackoverflow) * 1948-02-26
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US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
NL147713B (nl) * 1948-07-23 Laing & Son Ltd John Werkwijze voor het bereiden van een plastische mortel.
BE490438A (enrdf_load_stackoverflow) * 1948-08-13
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
NL143914C (enrdf_load_stackoverflow) * 1948-10-14
GB654909A (en) * 1948-10-27 1951-07-04 Standard Telephones Cables Ltd Improvements in or relating to electric delay devices employing semi-conductors
US2585078A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Negative resistance device utilizing semiconductor amplifier
BE491203A (enrdf_load_stackoverflow) * 1948-11-06
US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making
US2609459A (en) * 1948-12-30 1952-09-02 Rca Corp High input impedance transistor amplifier
NL150840B (nl) * 1949-01-04 Basf Wyandotte Corp Werkwijze voor het verlenen van anti-statische eigenschappen aan uit de smelt gevormde polymeren, werkwijze voor het bereiden van een anti-statisch makend middel, alsmede uit de smelt gevormd polymeervoortbrengsel met anti-statische eigenschappen.
US2632146A (en) * 1949-01-13 1953-03-17 Bell Telephone Labor Inc Transistor frequency modulation
US2595496A (en) * 1949-01-22 1952-05-06 Rca Corp Cascade-connected semiconductor amplifier
US2553490A (en) * 1949-02-21 1951-05-15 Bell Telephone Labor Inc Magnetic control of semiconductor currents
US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
NL152375C (enrdf_load_stackoverflow) * 1949-03-31
NL152201C (enrdf_load_stackoverflow) * 1949-03-31
BE558880A (enrdf_load_stackoverflow) * 1949-04-01
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
US2595232A (en) * 1949-04-29 1952-05-06 Bell Telephone Labor Inc Telephone switching system employing a transistor
US2675474A (en) * 1949-05-14 1954-04-13 Rca Corp Two-terminal sine wave oscillator
US2544211A (en) * 1949-05-18 1951-03-06 Rca Corp Variable impedance device
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
US2647957A (en) * 1949-06-01 1953-08-04 Bell Telephone Labor Inc Transistor circuit
US2662122A (en) * 1949-06-01 1953-12-08 Bell Telephone Labor Inc Two-way transistor electrical transmission system
US2662124A (en) * 1949-06-01 1953-12-08 Bell Telephone Labor Inc Transistor amplifier circuit
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2963578A (en) * 1949-06-11 1960-12-06 Automatic Elect Lab Signal translation apparatus employing transistors
US2713117A (en) * 1949-06-18 1955-07-12 Sylvania Electric Prod Heterodyne converter
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices
US2644914A (en) * 1949-08-17 1953-07-07 Bell Telephone Labor Inc Multicontact semiconductor translating device
US2931898A (en) * 1949-08-31 1960-04-05 Rca Corp Semi-conductor oscillators
US2629767A (en) * 1949-08-31 1953-02-24 Rca Corp Semiconductor amplifier or oscillator device
US2609428A (en) * 1949-08-31 1952-09-02 Rca Corp Base electrodes for semiconductor devices
US2691074A (en) * 1949-08-31 1954-10-05 Rca Corp Amplifier having frequency responsive variable gain
DE972909C (de) * 1949-09-28 1959-11-05 Philips Nv Halbleiteranordnung unter Verwendung eines Halbleiterkoerpers, auf dem mindestens zwei gleichrichtende Elektroden und eine weitere Elektrode angebracht sind, und Einrichtung mit einer solchen Halbleiteranordnung
BE498396A (enrdf_load_stackoverflow) * 1949-09-30
US2570436A (en) * 1949-09-30 1951-10-09 Rca Corp Crystal controlled oscillator
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
BE495936A (enrdf_load_stackoverflow) * 1949-10-11
US2605306A (en) * 1949-10-15 1952-07-29 Rca Corp Semiconductor multivibrator circuit
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
BE500302A (enrdf_load_stackoverflow) * 1949-11-30
US2645683A (en) * 1949-12-17 1953-07-14 Rca Corp Electromechanical transducer
US2627575A (en) * 1950-02-18 1953-02-03 Bell Telephone Labor Inc Semiconductor translating device
US2675433A (en) * 1950-04-27 1954-04-13 Rca Corp Degenerative amplifier
US2666150A (en) * 1950-05-04 1954-01-12 Ibm Crystal tetrode
US2713665A (en) * 1950-11-09 1955-07-19 Bell Telephone Labor Inc Transistor modulator circuits
US2644925A (en) * 1950-12-29 1953-07-07 Rca Corp Semiconductor amplitude modulation system
US2702316A (en) * 1951-02-28 1955-02-15 Rca Corp Signal modulation system
US2701302A (en) * 1951-03-29 1955-02-01 Rca Corp Semiconductor frequency converter
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2702838A (en) * 1951-11-15 1955-02-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2676271A (en) * 1952-01-25 1954-04-20 Bell Telephone Labor Inc Transistor gate
US2693568A (en) * 1952-03-05 1954-11-02 Bell Telephone Labor Inc Current and voltage regulation
BE519804A (enrdf_load_stackoverflow) * 1952-05-09
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator
NL191850A (enrdf_load_stackoverflow) * 1952-10-09
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2801389A (en) * 1952-11-18 1957-07-30 Ernest G Linder High energy bombardment-inducedconductivity control of electrical circuits
BE524722A (enrdf_load_stackoverflow) * 1952-12-01
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices
US2901638A (en) * 1953-07-21 1959-08-25 Sylvania Electric Prod Transistor switching circuit
US2915646A (en) * 1953-12-04 1959-12-01 Rca Corp Semiconductor devices and system
US2906889A (en) * 1953-12-31 1959-09-29 Ibm Binary trigger circuit employing single transistor
NL195088A (enrdf_load_stackoverflow) * 1954-02-26
US2884545A (en) * 1954-03-17 1959-04-28 Gen Precision Lab Inc Transistor protection circuit
NL93522C (enrdf_load_stackoverflow) * 1954-03-26
US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
NL201086A (enrdf_load_stackoverflow) * 1954-10-11
US2995665A (en) * 1955-05-20 1961-08-08 Ibm Transistors and circuits therefor
US2941092A (en) * 1955-10-25 1960-06-14 Philips Corp Pulse delay circuit
US2939965A (en) * 1956-12-20 1960-06-07 Abraham George Electrical switching circuit
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US3091703A (en) * 1959-04-08 1963-05-28 Raytheon Co Semiconductor devices utilizing carrier injection into a space charge region
NL130600C (enrdf_load_stackoverflow) * 1960-03-22
US3169222A (en) * 1960-12-30 1965-02-09 Rca Corp Double-emitter transistor circuits
DE1223954B (de) * 1962-11-16 1966-09-01 Siemens Ag Halbleiterstromtor mit vier Zonen abwechselnd entgegengesetzten Leitungstyps und einer Steuerelektrode
US3351782A (en) * 1965-04-01 1967-11-07 Motorola Inc Multiple emitter transistorized logic circuitry

Also Published As

Publication number Publication date
NL75792C (enrdf_load_stackoverflow)
FR980994A (fr) 1951-05-21
US2476323A (en) 1949-07-19

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