GB694026A - Electric signal translating apparatus utilizing semiconductive elements - Google Patents

Electric signal translating apparatus utilizing semiconductive elements

Info

Publication number
GB694026A
GB694026A GB12815/49A GB1281549A GB694026A GB 694026 A GB694026 A GB 694026A GB 12815/49 A GB12815/49 A GB 12815/49A GB 1281549 A GB1281549 A GB 1281549A GB 694026 A GB694026 A GB 694026A
Authority
GB
United Kingdom
Prior art keywords
electrode
emitter
absorber
semi
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12815/49A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB694026A publication Critical patent/GB694026A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computer Hardware Design (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)

Abstract

694,026. Semi-conductor amplifiers. WESTERN ELECTRIC CO., Inc. May 13, 1949 [May 19, 1948], No. 12815/49. Class 40 (iv). [Also in Group XL (c)] Electric signal translating apparatus for use in a modulating or gating circuit comprises a semi-conductive member with a control electrode making low resistance contact with the member, an absorber electrode making rectifier contact with the member and baised for reverse direction conduction, two or more emitter electrodes biased for forward direction conduction, and means for applying signals to each of the emitter electrodes, In Fig. 1, a block 1 of N-type germanium having a thin layer 2 of P-type material is prepared, for example, as described in Specifications 632,942, [Group XL (c)], and 694,022, [Group XXXVI]. A high resistance barrier 3 separates the N- and P-type layers. The control electrode 6, emitter electrode 4 and absorber or collector electrode 5 are provided and supplied with appropriate bias voltages, as described in Specification 694,021, to provide a semi-conductor amplifying device. The bias for the emitter electrode may be provided by resistor 10 and condenser 11, as described in Specification 694,025. A second emitter electrode 4a is also provided, and signals such as a "carrier" and a modulating signal from sources " p " and " q " are applied to electrodes 4 and 4a respectively. The current in the circuit from the absorber electrode 5 is controlled only by the most positive emitter electrode, the more negative electrode having no effect, so that with two oscillations, as shown in Fig. 3, the absorber electrode current corresponds to that shown by the solid line. This output waveform contains the usual sum and difference frequencies, which may be selected by filters. The emitter electrodes are preferably spaced at equal distances and on opposite sides of the adsorber electrode. Alternatively, a rectangular waveform may be applied to electrode 4a, so that the arrangement then provides a gating circuit. An additional auxiliary emitter electrode may also be added, whereby, for example, a gating circuit dependent upon the combined effect of two gating control voltages may be provided. Similar circuits but corresponding to the " grounded grid " and " cathode follower circuits used with thermionic valves are also described. If a block of P-type material with an N-type layer is used, the sense of the bias and applied voltages is reversed.
GB12815/49A 1948-05-19 1949-05-13 Electric signal translating apparatus utilizing semiconductive elements Expired GB694026A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27890A US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator

Publications (1)

Publication Number Publication Date
GB694026A true GB694026A (en) 1953-07-15

Family

ID=21840356

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12815/49A Expired GB694026A (en) 1948-05-19 1949-05-13 Electric signal translating apparatus utilizing semiconductive elements

Country Status (4)

Country Link
US (1) US2476323A (en)
FR (1) FR980994A (en)
GB (1) GB694026A (en)
NL (1) NL75792C (en)

Families Citing this family (85)

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US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
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US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2713117A (en) * 1949-06-18 1955-07-12 Sylvania Electric Prod Heterodyne converter
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices
US2644914A (en) * 1949-08-17 1953-07-07 Bell Telephone Labor Inc Multicontact semiconductor translating device
US2931898A (en) * 1949-08-31 1960-04-05 Rca Corp Semi-conductor oscillators
US2691074A (en) * 1949-08-31 1954-10-05 Rca Corp Amplifier having frequency responsive variable gain
US2609428A (en) * 1949-08-31 1952-09-02 Rca Corp Base electrodes for semiconductor devices
US2629767A (en) * 1949-08-31 1953-02-24 Rca Corp Semiconductor amplifier or oscillator device
DE972909C (en) * 1949-09-28 1959-11-05 Philips Nv Semiconductor arrangement using a semiconductor body on which at least two rectifying electrodes and a further electrode are attached, and device with such a semiconductor arrangement
NL156301B (en) * 1949-09-30 H Verheij S Machines Nv BREAD MAKING MACHINE.
US2570436A (en) * 1949-09-30 1951-10-09 Rca Corp Crystal controlled oscillator
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
BE495936A (en) * 1949-10-11
US2605306A (en) * 1949-10-15 1952-07-29 Rca Corp Semiconductor multivibrator circuit
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
BE500302A (en) * 1949-11-30
US2645683A (en) * 1949-12-17 1953-07-14 Rca Corp Electromechanical transducer
US2627575A (en) * 1950-02-18 1953-02-03 Bell Telephone Labor Inc Semiconductor translating device
US2675433A (en) * 1950-04-27 1954-04-13 Rca Corp Degenerative amplifier
US2666150A (en) * 1950-05-04 1954-01-12 Ibm Crystal tetrode
US2713665A (en) * 1950-11-09 1955-07-19 Bell Telephone Labor Inc Transistor modulator circuits
US2644925A (en) * 1950-12-29 1953-07-07 Rca Corp Semiconductor amplitude modulation system
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US2701302A (en) * 1951-03-29 1955-02-01 Rca Corp Semiconductor frequency converter
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2702838A (en) * 1951-11-15 1955-02-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2676271A (en) * 1952-01-25 1954-04-20 Bell Telephone Labor Inc Transistor gate
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2693568A (en) * 1952-03-05 1954-11-02 Bell Telephone Labor Inc Current and voltage regulation
BE519804A (en) * 1952-05-09
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator
NL191850A (en) * 1952-10-09
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2801389A (en) * 1952-11-18 1957-07-30 Ernest G Linder High energy bombardment-inducedconductivity control of electrical circuits
BE524722A (en) * 1952-12-01
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices
US2901638A (en) * 1953-07-21 1959-08-25 Sylvania Electric Prod Transistor switching circuit
US2915646A (en) * 1953-12-04 1959-12-01 Rca Corp Semiconductor devices and system
US2906889A (en) * 1953-12-31 1959-09-29 Ibm Binary trigger circuit employing single transistor
NL195088A (en) * 1954-02-26
US2884545A (en) * 1954-03-17 1959-04-28 Gen Precision Lab Inc Transistor protection circuit
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US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
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US2995665A (en) * 1955-05-20 1961-08-08 Ibm Transistors and circuits therefor
US2941092A (en) * 1955-10-25 1960-06-14 Philips Corp Pulse delay circuit
US2939965A (en) * 1956-12-20 1960-06-07 Abraham George Electrical switching circuit
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
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US3351782A (en) * 1965-04-01 1967-11-07 Motorola Inc Multiple emitter transistorized logic circuitry

Also Published As

Publication number Publication date
NL75792C (en)
FR980994A (en) 1951-05-21
US2476323A (en) 1949-07-19

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