FR980994A - Improvements to modulators - Google Patents

Improvements to modulators

Info

Publication number
FR980994A
FR980994A FR980994DA FR980994A FR 980994 A FR980994 A FR 980994A FR 980994D A FR980994D A FR 980994DA FR 980994 A FR980994 A FR 980994A
Authority
FR
France
Prior art keywords
modulators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR980994A publication Critical patent/FR980994A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computer Hardware Design (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
FR980994D 1948-05-19 1949-02-16 Improvements to modulators Expired FR980994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27890A US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator

Publications (1)

Publication Number Publication Date
FR980994A true FR980994A (en) 1951-05-21

Family

ID=21840356

Family Applications (1)

Application Number Title Priority Date Filing Date
FR980994D Expired FR980994A (en) 1948-05-19 1949-02-16 Improvements to modulators

Country Status (4)

Country Link
US (1) US2476323A (en)
FR (1) FR980994A (en)
GB (1) GB694026A (en)
NL (1) NL75792C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1017220B (en) * 1952-08-15 1957-10-10 Western Electric Co Four-electrode transistor modulator

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US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making
US2609459A (en) * 1948-12-30 1952-09-02 Rca Corp High input impedance transistor amplifier
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US2632146A (en) * 1949-01-13 1953-03-17 Bell Telephone Labor Inc Transistor frequency modulation
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US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
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US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
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US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2963578A (en) * 1949-06-11 1960-12-06 Automatic Elect Lab Signal translation apparatus employing transistors
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2713117A (en) * 1949-06-18 1955-07-12 Sylvania Electric Prod Heterodyne converter
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices
US2644914A (en) * 1949-08-17 1953-07-07 Bell Telephone Labor Inc Multicontact semiconductor translating device
US2931898A (en) * 1949-08-31 1960-04-05 Rca Corp Semi-conductor oscillators
US2691074A (en) * 1949-08-31 1954-10-05 Rca Corp Amplifier having frequency responsive variable gain
US2609428A (en) * 1949-08-31 1952-09-02 Rca Corp Base electrodes for semiconductor devices
US2629767A (en) * 1949-08-31 1953-02-24 Rca Corp Semiconductor amplifier or oscillator device
DE972909C (en) * 1949-09-28 1959-11-05 Philips Nv Semiconductor arrangement using a semiconductor body on which at least two rectifying electrodes and a further electrode are attached, and device with such a semiconductor arrangement
NL156301B (en) * 1949-09-30 H Verheij S Machines Nv BREAD MAKING MACHINE.
US2570436A (en) * 1949-09-30 1951-10-09 Rca Corp Crystal controlled oscillator
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
BE495936A (en) * 1949-10-11
US2605306A (en) * 1949-10-15 1952-07-29 Rca Corp Semiconductor multivibrator circuit
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
BE500302A (en) * 1949-11-30
US2645683A (en) * 1949-12-17 1953-07-14 Rca Corp Electromechanical transducer
US2627575A (en) * 1950-02-18 1953-02-03 Bell Telephone Labor Inc Semiconductor translating device
US2675433A (en) * 1950-04-27 1954-04-13 Rca Corp Degenerative amplifier
US2666150A (en) * 1950-05-04 1954-01-12 Ibm Crystal tetrode
US2713665A (en) * 1950-11-09 1955-07-19 Bell Telephone Labor Inc Transistor modulator circuits
US2644925A (en) * 1950-12-29 1953-07-07 Rca Corp Semiconductor amplitude modulation system
US2702316A (en) * 1951-02-28 1955-02-15 Rca Corp Signal modulation system
US2701302A (en) * 1951-03-29 1955-02-01 Rca Corp Semiconductor frequency converter
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2702838A (en) * 1951-11-15 1955-02-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2676271A (en) * 1952-01-25 1954-04-20 Bell Telephone Labor Inc Transistor gate
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2693568A (en) * 1952-03-05 1954-11-02 Bell Telephone Labor Inc Current and voltage regulation
BE519804A (en) * 1952-05-09
NL191850A (en) * 1952-10-09
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2801389A (en) * 1952-11-18 1957-07-30 Ernest G Linder High energy bombardment-inducedconductivity control of electrical circuits
BE524722A (en) * 1952-12-01
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices
US2901638A (en) * 1953-07-21 1959-08-25 Sylvania Electric Prod Transistor switching circuit
US2915646A (en) * 1953-12-04 1959-12-01 Rca Corp Semiconductor devices and system
US2906889A (en) * 1953-12-31 1959-09-29 Ibm Binary trigger circuit employing single transistor
NL195088A (en) * 1954-02-26
US2884545A (en) * 1954-03-17 1959-04-28 Gen Precision Lab Inc Transistor protection circuit
NL93522C (en) * 1954-03-26
US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
NL201086A (en) * 1954-10-11
US2995665A (en) * 1955-05-20 1961-08-08 Ibm Transistors and circuits therefor
US2941092A (en) * 1955-10-25 1960-06-14 Philips Corp Pulse delay circuit
US2939965A (en) * 1956-12-20 1960-06-07 Abraham George Electrical switching circuit
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US3091703A (en) * 1959-04-08 1963-05-28 Raytheon Co Semiconductor devices utilizing carrier injection into a space charge region
NL130600C (en) * 1960-03-22
US3169222A (en) * 1960-12-30 1965-02-09 Rca Corp Double-emitter transistor circuits
DE1223954B (en) * 1962-11-16 1966-09-01 Siemens Ag Semiconductor current gate with four zones of alternating conduction types and a control electrode
US3351782A (en) * 1965-04-01 1967-11-07 Motorola Inc Multiple emitter transistorized logic circuitry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1017220B (en) * 1952-08-15 1957-10-10 Western Electric Co Four-electrode transistor modulator

Also Published As

Publication number Publication date
NL75792C (en)
US2476323A (en) 1949-07-19
GB694026A (en) 1953-07-15

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