GB690243A - Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby - Google Patents

Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby

Info

Publication number
GB690243A
GB690243A GB28396/50A GB2839650A GB690243A GB 690243 A GB690243 A GB 690243A GB 28396/50 A GB28396/50 A GB 28396/50A GB 2839650 A GB2839650 A GB 2839650A GB 690243 A GB690243 A GB 690243A
Authority
GB
United Kingdom
Prior art keywords
germanium
hydrogen
rectifier
crystals
dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28396/50A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB28396/50A priority Critical patent/GB690243A/en
Publication of GB690243A publication Critical patent/GB690243A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

690,243. Germanium rectifiers. WESTING- HOUSE BRAKE & SIGNAL CO., Ltd., JENKINS, A., and LANGRIDGE, A. Aug. 15, 1951 [Nov. 21, 1950], No. 28396/50. Class 37. N-type germanium rectifier crystals are prepared by introducing in a gaseous state into molten germanium of an impurity content not greater than one part by weight in a million one or more of the following substances: argon, neon, xenon, krypton, hydrogen, carbon dioxide, water vapour, the halogens, carbon tetrachloride, and oxygen, and then cooling the melt at a controlled rate. Hydrogen may be introduced by reducing germanium dioxide having an impurity not greater than one part in a million by weight of the germanium in a hydrogen atmosphere, and then raising the temperature to 1050‹ C. for a short period in the same hydrogen atmosphere before slowly cooling. Alternatively the germanium dioxide after reduction by hydrogen may be heated to 1300‹ C. to drive off hydrogen and water vapour and afterwards cast in a mould cooled down from 1050‹ C. using one or more of the above gaseous substances to provide a moulding pressure as described in Specification 690,240.
GB28396/50A 1950-11-21 1950-11-21 Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby Expired GB690243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB28396/50A GB690243A (en) 1950-11-21 1950-11-21 Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28396/50A GB690243A (en) 1950-11-21 1950-11-21 Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby

Publications (1)

Publication Number Publication Date
GB690243A true GB690243A (en) 1953-04-15

Family

ID=10274953

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28396/50A Expired GB690243A (en) 1950-11-21 1950-11-21 Improvements relating to processes for the preparation of germanium rectifier crystals and rectifier crystals prepared thereby

Country Status (1)

Country Link
GB (1) GB690243A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1064486B (en) * 1956-11-05 1959-09-03 Pechiney Prod Chimiques Sa Process for cleaning silicon
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers
DE1064486B (en) * 1956-11-05 1959-09-03 Pechiney Prod Chimiques Sa Process for cleaning silicon
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials

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