GB683558A - Improvements in or relating to crystal triodes - Google Patents

Improvements in or relating to crystal triodes

Info

Publication number
GB683558A
GB683558A GB13662/50A GB1366250A GB683558A GB 683558 A GB683558 A GB 683558A GB 13662/50 A GB13662/50 A GB 13662/50A GB 1366250 A GB1366250 A GB 1366250A GB 683558 A GB683558 A GB 683558A
Authority
GB
United Kingdom
Prior art keywords
pulses
emitter
crystal
signals
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13662/50A
Inventor
Alec Harley Reeves
Charles De Boismaison White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB13662/50A priority Critical patent/GB683558A/en
Priority to US227798A priority patent/US2663767A/en
Priority to DEI4206A priority patent/DE881802C/en
Publication of GB683558A publication Critical patent/GB683558A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
    • H03F3/387—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Transmitters (AREA)
  • Digital Transmission Methods That Use Modulated Carrier Waves (AREA)

Abstract

683,558. Semi-conductor amplifier circuits. STANDARD TELEPHONES & CABLES, Ltd. May 25, 1951 [May 31, 1950], No. 13662/50. Class 40 (vi). An electric signal translating circuit comprises a crystal triode and means for applying short stabilizing pulses between the collector and emitter electrodes during the normal transmission of signals, which do not interfere appreciably with the signals. The application of short pulses in this way inhibits changes in the characteristics and performance of the crystal triode due to variations in humidity, temperature or to other causes. In Fig. 1, input signals are applied via transformer 6 to the emitter 4 of the crystal triode which comprises a block 1 of N-type germanium, and amplified output signals are taken from transformer 8. The emitter and collector electrodes 4, 5 may consist of metal points or of metal films. The pulses are produced by means of a switch 10 which is arranged to charge condenser 11 from battery 12, and then discharge the condenser through the emitter and collector electrodes, the emitter being driven positive relative to the collector. The length and repetition rate of the pulses is selected so that they do not interfere with the normal signal, and chokes 13 and 14 may be provided to suppress the pulses in the input and output circuits. In an alternative arrangement short pulses from a pulse generator are supplied via a transformer, the secondary of which consists of two parts connected in series aid and separated by a condenser. In this embodiment, a plurality of crystal triodes may be supplied with pulses from the same generator. Crystal triodes operated in this manner are found to be more reliable than those placed in hermetically sealed containers. The invention can be applied to crystal triodes when used in other types of circuits, such as modulators, rectifiers or oscillatos. Specification 681,809, [Croup XXXIX], is referred to.
GB13662/50A 1950-05-31 1950-05-31 Improvements in or relating to crystal triodes Expired GB683558A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB13662/50A GB683558A (en) 1950-05-31 1950-05-31 Improvements in or relating to crystal triodes
US227798A US2663767A (en) 1950-05-31 1951-05-23 Stabilized crystal triode system
DEI4206A DE881802C (en) 1950-05-31 1951-05-31 Circuit for the transmission of signals using a crystal triode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13662/50A GB683558A (en) 1950-05-31 1950-05-31 Improvements in or relating to crystal triodes

Publications (1)

Publication Number Publication Date
GB683558A true GB683558A (en) 1952-12-03

Family

ID=10027119

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13662/50A Expired GB683558A (en) 1950-05-31 1950-05-31 Improvements in or relating to crystal triodes

Country Status (3)

Country Link
US (1) US2663767A (en)
DE (1) DE881802C (en)
GB (1) GB683558A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US3040191A (en) * 1958-06-10 1962-06-19 Westinghouse Electric Corp Switching systems
US3720878A (en) * 1971-05-21 1973-03-13 R Rosenberry Transmission line impedance matching circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
BE488563A (en) * 1948-04-21
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material

Also Published As

Publication number Publication date
DE881802C (en) 1953-07-02
US2663767A (en) 1953-12-22

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