GB636248A - Improvements in alloys and rectifiers made thereof - Google Patents
Improvements in alloys and rectifiers made thereofInfo
- Publication number
- GB636248A GB636248A GB19884/46A GB1988446A GB636248A GB 636248 A GB636248 A GB 636248A GB 19884/46 A GB19884/46 A GB 19884/46A GB 1988446 A GB1988446 A GB 1988446A GB 636248 A GB636248 A GB 636248A
- Authority
- GB
- United Kingdom
- Prior art keywords
- overloads
- increased
- crystal
- elements
- electrolytically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052770 Uranium Inorganic materials 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- TXSMUPJUALCAEE-UHFFFAOYSA-M chlorostannane Chemical compound [SnH3]Cl TXSMUPJUALCAEE-UHFFFAOYSA-M 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- -1 say Chemical compound 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B11/00—Obtaining noble metals
- C22B11/10—Obtaining noble metals by amalgamating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Contacts (AREA)
- Conductive Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US604744A US2514879A (en) | 1945-07-13 | 1945-07-13 | Alloys and rectifiers made thereof |
| US66946A US2637770A (en) | 1945-07-13 | 1948-12-23 | Alloys and rectifiers made thereof |
| US135745A US2588253A (en) | 1945-07-13 | 1949-12-29 | Alloys and rectifiers made thereof |
| US135748A US2801376A (en) | 1945-07-13 | 1949-12-29 | Alloys and rectifiers made thereof |
| US135749A US2745046A (en) | 1945-07-13 | 1949-12-29 | Alloys and rectifiers made thereof |
| US135746A US2615966A (en) | 1945-07-13 | 1949-12-29 | Alloys and rectifiers made thereof |
| US135747A US2600997A (en) | 1945-07-13 | 1949-12-29 | Alloys and rectifiers made thereof |
| US136284A US2691577A (en) | 1945-07-13 | 1949-12-31 | Alloys and rectifiers made thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB636248A true GB636248A (en) | 1950-04-26 |
Family
ID=27574476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19884/46A Expired GB636248A (en) | 1945-07-13 | 1946-07-03 | Improvements in alloys and rectifiers made thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (7) | US2637770A (enrdf_load_stackoverflow) |
| BE (1) | BE466591A (enrdf_load_stackoverflow) |
| FR (1) | FR941699A (enrdf_load_stackoverflow) |
| GB (1) | GB636248A (enrdf_load_stackoverflow) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2766152A (en) * | 1951-11-16 | 1956-10-09 | Sylvania Electric Prod | Method of producing germanium crystals |
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
| US2714566A (en) * | 1952-05-28 | 1955-08-02 | Rca Corp | Method of treating a germanium junction rectifier |
| US2841860A (en) * | 1952-08-08 | 1958-07-08 | Sylvania Electric Prod | Semiconductor devices and methods |
| US2713132A (en) * | 1952-10-14 | 1955-07-12 | Int Standard Electric Corp | Electric rectifying devices employing semiconductors |
| US2776920A (en) * | 1952-11-05 | 1957-01-08 | Gen Electric | Germanium-zinc alloy semi-conductors |
| US2776367A (en) * | 1952-11-18 | 1957-01-01 | Lebovec Kurt | Photon modulation in semiconductors |
| BE531626A (enrdf_load_stackoverflow) * | 1953-09-04 | |||
| BE533765A (enrdf_load_stackoverflow) * | 1953-12-01 | |||
| US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
| US2778802A (en) * | 1954-04-26 | 1957-01-22 | Battelle Development Corp | Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron |
| US2940024A (en) * | 1954-06-01 | 1960-06-07 | Rca Corp | Semi-conductor rectifiers |
| US2845373A (en) * | 1954-06-01 | 1958-07-29 | Rca Corp | Semi-conductor devices and methods of making same |
| US2705192A (en) * | 1954-06-04 | 1955-03-29 | Westinghouse Electric Corp | Etching solutions and process for etching members therewith |
| US2871377A (en) * | 1954-07-29 | 1959-01-27 | Gen Electric | Bistable semiconductor devices |
| US2916458A (en) * | 1954-11-12 | 1959-12-08 | Aerojet General Co | Pickling solution |
| US2809165A (en) * | 1956-03-15 | 1957-10-08 | Rca Corp | Semi-conductor materials |
| US2954308A (en) * | 1956-05-21 | 1960-09-27 | Ibm | Semiconductor impurity diffusion |
| DE1037015B (de) * | 1956-05-21 | 1958-08-21 | Ibm Deutschland | Stoerstellenhalbleiter vom N-Typ fuer Transistoren od. dgl. |
| US2913357A (en) * | 1956-09-20 | 1959-11-17 | Union Carbide Corp | Transistor and method of making a transistor |
| US2953529A (en) * | 1957-04-01 | 1960-09-20 | Rca Corp | Semiconductive radiation-sensitive device |
| US3145328A (en) * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies |
| DE1160548B (de) * | 1957-12-18 | 1964-01-02 | Siemens Ag | Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel |
| DE1205197B (de) * | 1958-02-28 | 1965-11-18 | Westinghouse Electric Corp | Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode |
| US2998572A (en) * | 1958-08-01 | 1961-08-29 | Sylvania Electric Prod | Crystal amplifier |
| DE1112207B (de) * | 1959-02-07 | 1961-08-03 | Siemens Ag | Verfahren zur Herstellung eines dotierten Bereiches in einer Halbleiteranordnung |
| DE1107349B (de) * | 1959-06-19 | 1961-05-25 | Licentia Gmbh | Steuerung fuer Stromrichter |
| DE1114949B (de) * | 1959-08-27 | 1961-10-12 | Siemens Ag | Einrichtung zum Betrieb von einanodigen gittergesteuerten Entladungsgefaessen |
| US3193364A (en) * | 1960-05-20 | 1965-07-06 | American Optical Corp | Method of making electronic devices |
| US3181983A (en) * | 1961-03-06 | 1965-05-04 | Sperry Rand Corp | Method for controlling the characteristic of a tunnel diode |
| DE1171536B (de) * | 1961-08-25 | 1964-06-04 | Siemens Ag | Halbleiteranordnung mit durch Dotierung herabgesetzter Traegerlebensdauer |
| US3146097A (en) * | 1962-04-23 | 1964-08-25 | Nat Res Corp | Tin base alloys |
| NL295918A (enrdf_load_stackoverflow) * | 1962-07-31 | |||
| US3523222A (en) * | 1966-09-15 | 1970-08-04 | Texas Instruments Inc | Semiconductive contacts |
| US3545967A (en) * | 1966-09-28 | 1970-12-08 | Aerojet General Co | Metal-semiconductor alloys for thin-film resistors |
| US3930870A (en) * | 1973-12-28 | 1976-01-06 | International Business Machines Corporation | Silicon polishing solution preparation |
| US4215577A (en) * | 1978-08-28 | 1980-08-05 | Purdue Research Foundation | Utilization of diodes as wide range responsive thermometers |
| US4247579A (en) * | 1979-11-30 | 1981-01-27 | General Electric Company | Method for metallizing a semiconductor element |
| US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
| US4643589A (en) * | 1985-08-09 | 1987-02-17 | Lake Shore Cryotronics, Inc. | Thermometry employing gallium aluminum arsenide diode sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE317010A (enrdf_load_stackoverflow) * | 1928-10-01 | |||
| US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
| BE467418A (enrdf_load_stackoverflow) * | 1943-03-22 | |||
| US2530110A (en) * | 1944-06-02 | 1950-11-14 | Sperry Corp | Nonlinear circuit device utilizing germanium |
| US2446467A (en) * | 1944-11-11 | 1948-08-03 | Fansteel Metallurgical Corp | Dry plate rectifier |
| US2514879A (en) * | 1945-07-13 | 1950-07-11 | Purdue Research Foundation | Alloys and rectifiers made thereof |
| US2472770A (en) * | 1945-11-20 | 1949-06-07 | Sylvania Electric Prod | Resistance apparatus for converting mechanical movement into electrical pulses |
| US2505633A (en) * | 1946-03-18 | 1950-04-25 | Purdue Research Foundation | Alloys of germanium and method of making same |
| US2447829A (en) * | 1946-08-14 | 1948-08-24 | Purdue Research Foundation | Germanium-helium alloys and rectifiers made therefrom |
-
0
- BE BE466591D patent/BE466591A/xx unknown
-
1946
- 1946-07-03 GB GB19884/46A patent/GB636248A/en not_active Expired
- 1946-07-11 FR FR941699D patent/FR941699A/fr not_active Expired
-
1948
- 1948-12-23 US US66946A patent/US2637770A/en not_active Expired - Lifetime
-
1949
- 1949-12-29 US US135747A patent/US2600997A/en not_active Expired - Lifetime
- 1949-12-29 US US135749A patent/US2745046A/en not_active Expired - Lifetime
- 1949-12-29 US US135745A patent/US2588253A/en not_active Expired - Lifetime
- 1949-12-29 US US135748A patent/US2801376A/en not_active Expired - Lifetime
- 1949-12-29 US US135746A patent/US2615966A/en not_active Expired - Lifetime
- 1949-12-31 US US136284A patent/US2691577A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US2600997A (en) | 1952-06-17 |
| US2745046A (en) | 1956-05-08 |
| FR941699A (fr) | 1949-01-18 |
| BE466591A (enrdf_load_stackoverflow) | |
| US2801376A (en) | 1957-07-30 |
| US2691577A (en) | 1954-10-12 |
| US2637770A (en) | 1953-05-05 |
| US2615966A (en) | 1952-10-28 |
| US2588253A (en) | 1952-03-04 |
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