GB585114A - Improvements in and relating to the manufacture of quartz resonators - Google Patents

Improvements in and relating to the manufacture of quartz resonators

Info

Publication number
GB585114A
GB585114A GB2070/45A GB207045A GB585114A GB 585114 A GB585114 A GB 585114A GB 2070/45 A GB2070/45 A GB 2070/45A GB 207045 A GB207045 A GB 207045A GB 585114 A GB585114 A GB 585114A
Authority
GB
United Kingdom
Prior art keywords
reagent
crystal
etching
quartz
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2070/45A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Publication of GB585114A publication Critical patent/GB585114A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

585,114. Etching. BRITISH THOMSONHOUSTON CO., Ltd. Jan. 26, 1945, No. 2070. Convention date, Jan. 28, 1944. [Class 100 (ii)] [Also in Group XL] Shaped articles such as resonators of crystalline quartz have their dimensions reduced by being subjected to the dissolving action of an aqueous solution of hydrofluoric acid to which is added ammonium bifluoride to produce uniformity of dissolving action. Resonator elements of quartz are fabricated by first cutting and rough grinding to approximately the desired frequency and then chemical reduction of thickness permits further approximation to the desired frequency by unskilled labour with greater speed. The final accurate adjustment is then carried out by hand. Abrasive material from the grinding operation, embedded in the surface of the quartz blanks is removed before the timed acid treatment by an etching reagent, and grease is removed by acetone. The clean crystals are subjected for a predetermined period, at room temperature, to the etching bath comprising an aqueous solution of hydrofluoric acid and ammonium bifluoride and have a smooth polished surface after treatment. The etching rate of a reagent may be .determined by observing the change in frequency of a chosen oscillator crystal after a known period of immersion and the time required to effect a given change of frequency can be estimated. The duration of the treating time depends on the grade of crystal, temperature of the reagent, amount of material to be removed and the concentration of the reagent. The latter is restored as the reaction proceeds by the addition of anhydrous hydrofluoric acid. Crystal blanks are held in chemically inert supports and relative motion between the reagent and the crystal is produced in order to preserve contact between the crystal surface and the solution by the removal of gas bubbles. When the etching is complete all traces of the reagent are removed from the crystal to maintain its liveliness of oscillation by first rinsing with distilled water, then with a dilute solution of ammonium hydroxide, then again with water and finally with acetone.
GB2070/45A 1944-01-28 1945-01-26 Improvements in and relating to the manufacture of quartz resonators Expired GB585114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US520139A US2376219A (en) 1944-01-28 1944-01-28 Fabrication of quartz resonators

Publications (1)

Publication Number Publication Date
GB585114A true GB585114A (en) 1947-01-30

Family

ID=24071358

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2070/45A Expired GB585114A (en) 1944-01-28 1945-01-26 Improvements in and relating to the manufacture of quartz resonators

Country Status (2)

Country Link
US (1) US2376219A (en)
GB (1) GB585114A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493461A (en) * 1944-05-04 1950-01-03 Harvey Wells Communications In Means and method of forming piezo-electric crystals
US2479286A (en) * 1944-11-21 1949-08-16 Bliley Electric Company Production of piezoelectric crystals
US2617850A (en) * 1948-06-17 1952-11-11 Carmichael Hugh Sealed insulator bushing
US2705392A (en) * 1952-06-11 1955-04-05 Selectronics Inc Method of manufacture of piezo electric crystals
US3063881A (en) * 1956-09-14 1962-11-13 Libbey Owens Ford Glass Co Method of making an electrically conductive article
US3107188A (en) * 1960-11-21 1963-10-15 Pacific Semiconductors Inc Process of etching semiconductors and etchant solutions used therefor
US3059129A (en) * 1961-03-08 1962-10-16 Collins Radio Co Pulse forming circuit using momentarily conducting transistor base-emitter leakage current to charge timing capacitor
US3447217A (en) * 1964-02-05 1969-06-03 Hitachi Ltd Method of producing ceramic piezoelectric vibrator
US4198262A (en) * 1979-03-29 1980-04-15 Atlantic Richfield Company Solar cell manufacture
NL7903389A (en) * 1979-05-01 1980-11-04 Philips Nv METHOD FOR IMPROVING THE HEAT-DRAWING PROPERTIES OF A ROTARY TURNAROOD AND SO THAT TURNAROUNDED.
DE10341204A1 (en) * 2003-09-04 2005-03-31 Daimlerchrysler Ag holder
CN116461023B (en) * 2023-04-18 2023-10-13 日照皓诚电子科技有限公司 Intelligent detection method and system for baking and curing of quartz crystal

Also Published As

Publication number Publication date
US2376219A (en) 1945-05-15

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