GB2591378A - Method of processing substrate for an energy storage device - Google Patents
Method of processing substrate for an energy storage device Download PDFInfo
- Publication number
- GB2591378A GB2591378A GB2103274.3A GB202103274A GB2591378A GB 2591378 A GB2591378 A GB 2591378A GB 202103274 A GB202103274 A GB 202103274A GB 2591378 A GB2591378 A GB 2591378A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- precursor
- energy storage
- groove
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract 44
- 238000004146 energy storage Methods 0.000 title claims abstract 23
- 238000000034 method Methods 0.000 title claims abstract 22
- 239000000463 material Substances 0.000 claims abstract 41
- 239000002243 precursor Substances 0.000 claims abstract 32
- 238000000151 deposition Methods 0.000 claims abstract 6
- 239000011810 insulating material Substances 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 239000003989 dielectric material Substances 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- 230000001419 dependent effect Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000002861 polymer material Substances 0.000 claims 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 claims 2
- OWIVCTKPNJKHDN-UHFFFAOYSA-N 2-[2-[2-[2-(2-hexan-3-yloxyethoxy)ethoxy]ethoxy]ethoxy]ethanol Chemical compound C(C)C(CCC)OCCOCCOCCOCCOCCO OWIVCTKPNJKHDN-UHFFFAOYSA-N 0.000 claims 1
- -1 T antalum oxide Chemical compound 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- WUXISMDFUAVWSS-PAMPIZDHSA-L barium(2+);(z)-1,1,1,5,5,5-hexafluoro-4-oxopent-2-en-2-olate Chemical compound [Ba+2].FC(F)(F)C(/[O-])=C/C(=O)C(F)(F)F.FC(F)(F)C(/[O-])=C/C(=O)C(F)(F)F WUXISMDFUAVWSS-PAMPIZDHSA-L 0.000 claims 1
- 239000011230 binding agent Substances 0.000 claims 1
- HAUBPZADNMBYMB-UHFFFAOYSA-N calcium copper Chemical compound [Ca].[Cu] HAUBPZADNMBYMB-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 239000002826 coolant Substances 0.000 claims 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 claims 1
- QBNKFXYJSJOGEL-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ti+4] QBNKFXYJSJOGEL-UHFFFAOYSA-N 0.000 claims 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/04—Drying; Impregnating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/145—Organic dielectrics vapour deposited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/02—Machines for winding capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
The present invention relates to a method of processing a substrate for an energy storage device comprising providing a drum arranged to transport a moving substrate, the drum having an electromagnetic charge. A substrate to be moved is provided and a plurality of curing stations are provided around the circumference of the drum. Each curing station performs the steps of depositing a precursor on the surface of the moving substrate, generating a plasma and directing the plasma onto the surface of the moving substrate such that the precursor is reacted to form a material layer on the substrate without substantially raising the temperature of the substrate.
Claims (36)
1. A method of processing a substrate for an energy storage device comprising: providing a drum arranged to transport a moving substrate, the drum having an electromagnetic charge and providing a substrate to be moved; providing a plurality of curing stations located around the circumference of the drum, wherein each curing station performs the steps of: depositing a precursor on the surface of the moving substrate; generating a plasma; and directing the plasma onto the surface of the moving substrate such that the precursor is reacted to form a material layer on the substrate without substantially raising the temperature of the substrate.
2. A method of processing a substrate for an energy storage device comprising: providing a drum arranged to transport a moving substrate, the drum having an electromagnetic charge; providing a substrate to be moved; and providing a vapourised precursor of a material coating; providing a plurality of curing stations in the chamber and spaced apart from one another around the circumference of the drum, each curing station performing the steps of: generating a plasma comprising a reactive gas, the plasma being spatially defined by the electromagnetic charge of the drum; and mixing the vapourised precursor with the plasma such that the precursor is dissociated by the plasma and the dissociated precursor is reacted with the reactive gas to form a material coating which is deposited on the substrate as a material layer without substantially raising the temperature of the substrate.
3. A method according to claim 1 or claim 2, wherein the material layer comprises a dielectric material.
4. A method according to any one of claims 1 to 3, wherein the substrate to be moved comprises a plurality of grooves, each groove having a first face and a second face, the first face and second face each having a coat of non-insulating material.
5. A method according claim 4 when dependent on claim 1 , wherein the method comprises: providing a plurality of curing stations located around the circumference of the drum, wherein each curing station performs the steps of: depositing a precursor in at least one groove of the plurality of grooves; generating a plasma; and directing the plasma onto the at least one groove such that the precursor in the groove is reacted to form a material layer in said groove.
6. A method according claim 4 when dependent on claim 2, wherein the method comprises: providing a plurality of curing stations located around the circumference of the drum, wherein each curing station performs the steps of: generating a plasma containing a reactive gas; mixing the plasma and the vapourised precursor in order to dissociate the precursor such that the dissociated precursor is reacted with the reactive gas to form a material coating; and directing the plasma onto the at least one groove such that the material coating is deposited to form a material layer in said groove.
7. A method according to any one of claims 1 to 6, wherein the plurality of curing stations are configured to deposit or generate the same precursor.
8. A method according to any one of claims 1 to 6, wherein the plurality of the curing stations are configured to deposit or generate at least two different precursors.
9. A method according to claim 8, wherein the plurality of curing stations are provided such that the at least two different precursors are deposited in the at least one groove in an alternating sequence.
10. A method according to any one of claims 4 to 9, wherein the non-insulating material is a conductor material.
11. A method according to any one of the preceding claims, wherein the precursor is vaporised before it is deposited on the surface of the moving substrate.
12. A method according to any one claims 4 to 1 1 , wherein each material layer is continuous between the first face and second face of each groove.
13. A method according to any one of claims 4 to 12, wherein the non-insulating material on the first face and non-insulating material on the second face are electrically separated from each other.
14. A method according to any one of the preceding claims, wherein the drum is cooled by a coolant.
15. A method according to any one of the preceding claims, wherein the precursor is a metal organic precursor.
16. A method according to claim 15, wherein the metal organic precursor is one or more of: Titanium(IV) isopropoxide, Titanium(IV) ethoxide, Titanium(IV) chloride, Tantalum(V) ethoxide, Tantalum(V) chloride, Niobium(V) ethoxide, Niobium(V) chloride, h5- cyclopentadienyl)-tetracarbonylniobium, Bisdipivaloylmethanate barium and Barium hexafluoroacetylacetonate pentaethyleneglycol ethyl butyl ether.
17. A method according to any one of the preceding claims, wherein the precursor comprises a precursor of one or more of: titanium dioxide Titanium oxide, T antalum oxide, Niobium oxide, Barium titanate, Strontium titanate and Calcium copper titanate.
18. A substrate for an energy storage device processed by the method according to any one of the preceding claims.
19. A substrate for an energy storage device according to claim 18, comprising: a plurality of grooves, each groove having a first face and a second face, the first face and the second face each having a coat of non-insulating material; and a plurality of material layers in each groove of the plurality of grooves, each material layer formed by depositing a precursor into each groove and reacting the precursor with a plasma.
20. A substrate for an energy storage device according to claim 18, comprising a plurality of grooves, each groove having a first face and a second face, the first face and the second face each having a coat of non-insulating material; and a plurality of material layers in each groove of the plurality of groove, each material layer formed by generating a vapourised precursor; generating a plasma comprising a reactive gas; and mixing the vapourised precursor with the plasma such that the precursor is dissociated by the plasma and the dissociated precursor is reacted with the reactive gas to form a material coating which is then deposited into each groove on the substrate as a material layer.
21. A substrate for an energy storage device according to any one of claims 19 to 20, wherein the plurality of material layers comprise a dielectric material layer.
22. A substrate for an energy storage device according to any one of claims 19 to 21 , wherein each of the plurality of material layers comprise the same material.
23. A substrate for an energy storage device according to any one of claims 19 to 21 , wherein the plurality of material layers comprise at least two layers of different materials.
24. A substrate for an energy storage device according to claim 23, wherein in the at least two layers of different materials, at least one layer comprises a dielectric material and at least one layer comprises a conductor material.
25. A substrate for an energy storage device according to claim 23 or claim 24, wherein the at least two different material layers are arranged in an alternating sequence.
26. A substrate for an energy storage device according to any one of claims 19 to 25, wherein at least one material layer of the plurality of material layers comprises a capacitor material with a dielectric constant of above 10.
27. A substrate for an energy storage device according to any one of claims 19 to 26, wherein at least one material layer of the plurality of material layers comprises a polymer material.
28. A substrate for an energy storage device according to claim 27, wherein the polymer material is conjugated.
29. A substrate for an energy storage device according to any one of claims 19 to 28, wherein at least one layer of the plurality of material layers comprises a conductive material.
30. A substrate for an energy storage device according to any one of claims 19 to 29, wherein at least one material layer of the plurality of material layers comprises a radio- curable binder.
31. A substrate for an energy storage device according to any one of claims 18 to 30, wherein each material layer has a thickness of between 5nm and 300nm, preferably 100nm.
32. A substrate for an energy storage device according to any one of claims 18 to 31 , comprising at least two dielectric material layers in each groove.
33. A substrate for an energy storage device according to claim 32, comprising at least two dielectric layers and a conductive layer positioned in between the dielectric layers.
34. An energy storage substrate comprising: a plurality of grooves, each groove having a first face and a second face, the first face and the second face each having a coat of non-insulating material; and each groove having a plurality of material layers, each material layer formed by depositing a precursor of said material layer into each groove and reacting the precursor with a plasma.
35. An energy storage substrate being a planar substrate and comprising a plurality of material layers, each material layer formed by depositing a precursor of said material layer and reacting the precursor with a plasma.
36. An energy storage substrate according to claim 34 or claim 35 comprising a substrate according to any one of claims 18-33.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1815842.8A GB201815842D0 (en) | 2018-09-28 | 2018-09-28 | Method of processing substrate for an energy storage device |
| PCT/GB2019/052730 WO2020065334A1 (en) | 2018-09-28 | 2019-09-27 | Method of processing substrate for an energy storage device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB202103274D0 GB202103274D0 (en) | 2021-04-21 |
| GB2591378A true GB2591378A (en) | 2021-07-28 |
| GB2591378B GB2591378B (en) | 2023-02-01 |
Family
ID=64108969
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1815842.8A Ceased GB201815842D0 (en) | 2018-09-28 | 2018-09-28 | Method of processing substrate for an energy storage device |
| GB2103274.3A Active GB2591378B (en) | 2018-09-28 | 2019-09-27 | Method of processing substrate for an energy storage device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1815842.8A Ceased GB201815842D0 (en) | 2018-09-28 | 2018-09-28 | Method of processing substrate for an energy storage device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2022502853A (en) |
| GB (2) | GB201815842D0 (en) |
| WO (1) | WO2020065334A1 (en) |
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| KR100716655B1 (en) * | 2006-06-29 | 2007-05-09 | 주식회사 하이닉스반도체 | Method for forming capacitor dielectric with zrconium oxide and tantalum oxide stack and method of manufacturing capacitor using the same |
| US8722505B2 (en) * | 2010-11-02 | 2014-05-13 | National Semiconductor Corporation | Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps |
| US9847326B2 (en) * | 2013-09-26 | 2017-12-19 | Infineon Technologies Ag | Electronic structure, a battery structure, and a method for manufacturing an electronic structure |
| GB201617276D0 (en) * | 2016-10-11 | 2016-11-23 | Big Solar Limited | Energy storage |
| GB2567029B (en) * | 2017-09-29 | 2020-08-05 | Camvac Ltd | Apparatus and method for processing, coating or curing a substrate |
| GB2562128B (en) * | 2017-09-29 | 2020-08-05 | Camvac Ltd | Apparatus and Method for Processing, Coating or Curing a Substrate |
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2018
- 2018-09-28 GB GBGB1815842.8A patent/GB201815842D0/en not_active Ceased
-
2019
- 2019-09-27 JP JP2021517043A patent/JP2022502853A/en active Pending
- 2019-09-27 WO PCT/GB2019/052730 patent/WO2020065334A1/en active Application Filing
- 2019-09-27 GB GB2103274.3A patent/GB2591378B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5224441A (en) * | 1991-09-27 | 1993-07-06 | The Boc Group, Inc. | Apparatus for rapid plasma treatments and method |
| US20040018307A1 (en) * | 2002-07-26 | 2004-01-29 | Park In-Sung | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material |
| US8592004B2 (en) * | 2009-09-11 | 2013-11-26 | Fujifilm Corporation | Film deposition method |
| US20120269988A1 (en) * | 2009-10-30 | 2012-10-25 | Sumitomo Chemical Company, Limited | Method of manufacture of multilayer film |
| US20150371834A1 (en) * | 2013-02-01 | 2015-12-24 | Camvac Limited | Apparatus and Methods for Defining a Plasma |
| KR20150033858A (en) * | 2013-09-25 | 2015-04-02 | (주)화인솔루션 | Apparatus for Coating Flexible Sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201815842D0 (en) | 2018-11-14 |
| JP2022502853A (en) | 2022-01-11 |
| GB202103274D0 (en) | 2021-04-21 |
| GB2591378B (en) | 2023-02-01 |
| WO2020065334A1 (en) | 2020-04-02 |
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