KR20150033858A - Apparatus for Coating Flexible Sheet - Google Patents

Abstract

The present invention as a deposition apparatus comprises: a process chamber; a drum provided in the process chamber and transferring a flexible object to be treated in a predetermined direction while rotating; an ion source provided in the process chamber to face the drum and laminating a predetermined laminated material on one surface of the flexible object to be treated; and a raw material supply unit supplying a precursor of the laminated material to the ion source. The ion source includes: a magnetic field unit of which one side facing the flexible object to be treated is opened and the other side is closed, wherein the open side has a plurality of magnetic poles arranged to be alternatively spaced apart and the closed side is connected to a magnetic core, thereby forming an accelerating closed loop of a plasma electron in the open side; a magnetic pole arranged in a lower portion of the accelerating closed loop of the magnetic field unit to be spaced apart from the magnetic field unit; and an insulating fixing unit which is filled between an inner surface of the magnetic field unit excluding a space of the accelerating closed loop and an outer surface of the magnetic pole and embeds and fixates the magnetic pole in the magnetic field unit, thereby generating a plasma ion for the laminated material from the precursor and supplying the ion to the flexible object to be treated.

Description

[0001] Apparatus for Coating Flexible Sheet [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus, and more particularly to a flexible object-to-be-processed apparatus for depositing a predetermined material on a flexible object to be processed.

Transparency The conductive thin film is used as a transparent electrode such as LCD, OLED, LED, optical device, solar cell, and touch panel. Such a transparent conductive thin film transmits light in the visible light region, good.

Transparency The conductive thin film is generally made of a material such as indium tin oxide (ITO), tin oxide (SnO), aluminum-doped zinc oxide (AZO) And is coated by magnetron sputtering method.

In general, when the oxide conductive thin film is coated by applying the sputtering method, the deposition rate is very low as compared with the PECVD method. Therefore, in the mass production process, a plurality of sputter cathodes are installed in the inline type equipment to thin the material having a low deposition rate . However, as the substrate type is changed from a plate type material such as glass to a polymer material in order to reduce the mass production and manufacturing cost, the equipment type is changed from the inline type to the roll to roll type. In the case of the roll to roll type equipment, There are additional difficulties in solving the process problems by increasing the number of cathodes as well as the problem of the scale of the equipment being increased and the thermal shocks applied to the substrates.

Nevertheless, recent electronic devices applied to information electronic devices such as mobile phones and game machines are required to be thin, light and strong against impact, so that there is a need for a thin film process for laminating a transparent conductive thin film on a polymer substrate such as a PET film Is increasing. Touch panel is one of these.

However, even if the PECVD process has a high deposition rate, it is difficult to process the polymer film such as the PET film at a temperature of 200 ° C or higher, so that the PECVD process requiring the process at about 400 ° C can not be applied. Therefore, it is necessary to find a new thin film deposition process that can deposit at room temperature and have a higher deposition rate than the sputtering process.

The present invention is to solve the difficulties of deposition rate and process temperature due to the formation of an oxide thin film on a polymer film, and it is possible to lower the temperature applied to the substrate, so that even a flexible film such as a polymer film has a low deposition temperature and a high deposition rate Which is capable of forming an oxide thin film on the substrate.

To achieve this object, a flexible object-to-be-processed apparatus includes a process chamber, a drum, an ion source, and a material supply unit.

Since the drum is provided in the process chamber and the refrigerant is injected into the inside of the process chamber, the flexible object moves in the cooling direction in a predetermined direction while rotating.

The ion source is provided in the process chamber so as to face the drum, and a predetermined laminate is laminated on one surface of the flexible object to be processed.

The ion source includes a magnetic circuit, an electrode, and an insulating fixing portion.

The magnetic field portion is opened at one side facing the flexible object to be processed and the other side is closed. A plurality of magnetic poles are alternately arranged on the opening side of the magnetic circuit, and the other side of the magnetic circuit is connected with a magnetic core to form an accelerated closed loop of the plasma electrons on the opening side to amplify the plasma ion density. The electrodes are spaced apart from the magnetic book at the bottom of the accelerator closed loop of the magnetic book.

The insulating fixing portion is filled at least between the inner surface of the magnetic circuit and the outer surface of the electrode except for the space of the accelerator closed loop to fix the electrode in the magnetic circuit.

An ion source having such a configuration generates plasma ions for a laminate from a percursor and supplies it to the flexible object to be processed.

The raw material supply unit supplies a precursor of the laminate to the ion source.

In the flexible object-to-be-processed vapor deposition apparatus, the insulating fixing portion of the ion source may have a depression on the end face facing the opening side. The depression may have a protrusion protruding from the edge to the center.

In the flexible object-to-be-processed vapor deposition apparatus, the magnetic pole of the ion source may consist of a precursor inlet, a precursor channel, and a precursor diffusion slit.

The precursor inlet is where the precursor enters and can be configured in the form of a tube.

The precursor channel is in communication with the precursor inlet and is formed long along the longitudinal direction inside the magnetic pole.

The precursor diffusion slit communicates with the precursor channel and communicates in the direction of the accelerator closed loop to diffuse the precursor in the direction of the accelerator closed loop.

In the flexible object-to-be-processed vapor deposition apparatus, the material supply portion includes a raw material container, a vaporizing portion, and an MFC (Mass Flow Controller).

The raw material container stores the liquid raw material.

The vaporization part forms a precursor from the liquid raw material by heating or applying ultrasonic vibration to the raw material container.

The MFC controls the amount of precursor supplied to the ion source.

In the flexible material processing apparatus, the flexible object to be processed is a polymer film, and the laminate is TiO ₂ , SiO ₂ , or Al ₂ O ₃ , and the liquid raw material is TiCl ₄ , TMDSO (tetramethyldisiloxane), or TMAL trimethylanilinium).

In the flexible object-to-be-processed vapor deposition apparatus, another example of the raw material supplying section may be constituted of a raw material container for storing the raw material gas and an MFC for regulating the amount of the gas raw material supplied to the ion source. In this case, the flexible object to be processed is a polymer film, the laminate is diamond like carbon (DLC), and the gas raw material may be methane gas.

In the flexible object-to-be-processed apparatus, the flexible object to be processed is a polymer film, and the laminate may have a multi-layer structure in which one of Nb ₂ O ₅ , Ta ₂ O ₃ and TiO ₂ is paired with SiO ₂ .

In the flexible object-to-be-processed vapor deposition apparatus, the ion source can form multiple accelerated closed loops of plasma electrons.

In the flexible object-to-be-processed vapor deposition apparatus, the ion source may have a plurality of ion sources in accordance with the thickness, kind, and stacking order of the laminate.

According to the flexible object vapor deposition apparatus having such a configuration, the vapor deposition process can be performed at a low temperature, and a desired laminate can be laminated to a flexible film such as a polymer film having a low melting point without damaging the substrate .

The flexible object-to-be-processed vapor deposition apparatus can minimize etch contaminants generated in the ion source itself, thereby preventing deposition of etch contaminants on the electrode or magnetic pole of the ion source. This can prevent deposition of contaminants on the polymer film, which only the desired material needs to be deposited.

The flexible object-to-be-processed vapor deposition apparatus is simple in structure since the electrode is fixed in the magnetic holding portion by the insulating fixing portion, and a separate device for keeping the interval between the electrode and the magnetic pole constant is not required. Here, the insulating fixing part is provided inside the ion source applied in the process of ionizing the precursor.

The flexible object-to-be-processed vapor deposition apparatus can greatly reduce the occurrence of short-circuit and arc by depressed portions and protruding portions of the insulating fixing portion.

FIG. 1A is a configuration diagram of a flexible object-to-be-processed vapor deposition apparatus according to an embodiment of the present invention. FIG.
1B is a perspective view showing the arrangement of the delivery roll, the winding roll, the guide roll, the drum and the ion source in FIG. 1A.
1C is a cross-sectional view showing the ion source and the raw material supplying portion of FIG. 1A.
FIGS. 2A and 2B show other embodiments of the flexible object-to-be-processed apparatus.
Fig. 3 illustrates a multi-loop ion source used in a flexible object-to-be-processed apparatus.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1A is a configuration diagram of a flexible object-to-be-processed vapor deposition apparatus according to an embodiment of the present invention. FIG.

1A, the flexible object to be processed is provided with a processing chamber 100, a feed roll 210, a take-up roll 220, guide rolls 230a and 230b, a drum 300, an ion source 400, a power supply unit 450, a material supply unit 500, and the like.

The process chamber 100 provides a confined space for depositing a thin film on a flexible substrate, for example, a polymer film 250. A vacuum pump 110 is coupled to one side of the process chamber 100. The vacuum pump 110 maintains the internal space at a predetermined process pressure while discharging the internal gas.

In the process chamber 100, an unreacted gas or a reactive gas is injected according to the process. Examples of the non-reactive gas include Ar, Ne, He, and Xe, and the reaction gas includes N ₂ , O ₂ , CH ₄ , CF _4, and the like. In some cases, an unreacted gas and a reactive gas may be used in combination. For example, in the case of depositing an oxide layer on the polymer film 250, oxygen gas may be injected in addition to argon gas.

The feed roll 210 is a roll that feeds the polymer film 250 and feeds the polymer film 250 to the drum 300 while rotating.

The take-up roll 220 is a roll for recovering the polymer film 250, and rotates while receiving the polymer film 250 that has been deposited from the drum 300 while being rotated.

The guide rolls 230a and 230b guide the polymer film 250 fed from the feed roll 210 to the drum 300 and the polymer film 250 deposited on the drum 300 to the take- Guide. The guide rollers 230a and 230b may have a plurality of guide rollers.

The drum 300 moves the polymer film 250 in one direction while being in surface contact with one surface of the polymer film 250. The drum 300 may have a cooling water channel through which cooling water flows, thereby cooling the surface-contacting polymer film 250.

The ion source 400 is provided opposite to the drum 300 and deposits a predetermined thin film on one side of the polymer film 250.

The ion source 400 forms a closed loop of a circle or oval between the magnetic poles by the magnetic field of the magnet installed in the ion source 400 and the magnetic field of the electrode, and collides with the inner gas such as the precursor, , And as a result plasma ions are generated from the internal gas. The high potential difference near the electrodes creates plasma electrons from the inner gas, and the magnetic and electric fields activate the plasma in the closed loop space. The negative charge in the plasma containing the plasma electrons makes a cyclotron movement along the closed loop, and the positive charges including the plasma ions are repelled toward the polymer film 250 by the electric field. And positive ions such as plasma ions move to the polymer film 250 with energy and are accumulated in a thin film form. Thus, the ion source 400 generates a plasma ion from an internal gas such as a precursor in the vicinity of its opening, reflects the cation into the process chamber, and sends the ion back to the process chamber. Thus, a process failure due to etching of the inner wall of the electrode, Can be lowered.

The ion source 400 may be used to implant energy in addition to depositing a thin film on the polymer film 250 and may be used to modify the surface of the polymer film 250 prior to depositing the thin film on the polymer film 250 , Or post-treatment after depositing a thin film.

The raw material supply unit 500 may include a raw material container 510, a vaporizer 520, and an MFC 530.

The raw material container 510 stores the liquid raw material. The liquid raw material may be TiCl ₄ , TMDSO (tetramethyldisiloxane), TMAL (trimethyaluminum), or the like.

The vaporizer 520 can heat the raw material container 510 or apply ultrasonic vibration, thereby forming a precursor from the raw material liquid in the raw material container 510. Here, the precursor may be a material before being ionized, that is, a material such as Ti, Si, or Al, and the precursor Ti, Si, or Al gas is generated from a liquid of TiCl ₄ , TMDSO (tetramethyldisiloxane), or TMAL .

The MFC 530 regulates the amount of precursor supplied into the ion source 400.

The raw material supply unit 500 may use a raw material that is not a liquid but a gas. In this case, the raw material supply unit 500 may be composed of the raw material container 510 and the MFC 530 alone. Methane gas may be used as the gas source, and in this case, the deposition material deposited on the polymer film 250 may be carbon, for example, diamond like carbon (DLC).

1B is a perspective view showing the arrangement of the delivery roll, the winding roll, the guide roll, the drum and the ion source in FIG. 1A.

As shown in FIG. 1B, the polymer film 250 is a thin film strip type, and its width is about 1.5 m. As a result, the feed roll 210, the take-up roll 220, the guide rolls 230a and 230b, the drum 300, and the ion source 400 have a rectangular shape with a length of at least 1.5 m.

1C is a cross-sectional view showing the ion source and the raw material supplying portion of FIG. 1A.

1C, the ion source 400 includes magnetic plates 411, 413a, 413b, and 415, an electrode 423, and an insulating fixing unit 431. [

The magnetic field portion is composed of the magnet 411, the magnetic poles 413a and 413b, the magnetic core 415 and the like, and forms a circular or elliptical closed loop space therein. The closed loop space formed by the magnetic field section is opened in the direction of the magnetic poles 413a and 413b and closed in the direction of the magnetic core 415. [

The magnet 411 is disposed between the magnetic pole 413a and the magnetic core 415. [ The magnet 411 is constituted by a permanent magnet or an electromagnet. In this case, the outer magnetic pole 413b is connected to the magnetic core 415 at the lower end of the magnet portion 411.

The magnetic poles 413a and 413b are spaced apart by a predetermined distance. The magnetic poles 413a and 413b are arranged with N poles and S poles alternating with a closed loop as a boundary. For example, when the central pole 413a is an N pole and the outer pole 413b is an S pole, the upper end of the magnet 411 connected to the central pole 413a is an N pole, The bottom is the S pole. The outer magnetic pole 413b is magnetically coupled to the S pole at the lower end of the magnet 411 through the magnetic core 415 to have an S pole.

The magnetic core 415 magnetically couples the lower end of the magnet 411 and the outer magnetic pole 413b and is a passage through which the magnetic force lines of the S pole at the lower end of the magnet 411 pass and is made of a material having a high magnetic permeability. The magnetic core 415 is connected to the outer magnetic pole 413b so that the outer magnetic pole 413b has the S pole and the magnetic force lines of the S pole at the lower end of the magnet 411 do not affect the magnetic force lines of the N pole, That is, magnetic effect by the magnet 411 itself is minimized.

The stimulus 413b has a precursor implant for supplying a precursor to the ion source 400. The precursor injection part comprises a precursor inlet (GT), a precursor channel (GC), and a precursor diffusion slit (GS).

The precursor inlet (GT) is a passage through which a precursor is supplied from the outside.

The precursor channel GC is connected to the precursor inlet GT and forms a predetermined space therein along the longitudinal direction of the magnetic pole 413b. The precursor channel GC disperses the precursor introduced from the precursor inlet GT in the longitudinal direction of the magnetic pole 413b.

The precursor diffusion slit GS is formed in a slit shape communicating with the precursor channel GC and the closed loop space and being cut out / opened in the closed loop direction along the longitudinal direction of the magnetic pole 413b.

When the precursor is introduced through the precursor inlet GT, the precursor injecting unit having such a configuration diffuses the precursor channel GC evenly in the longitudinal direction of the stimulus 413b, and then the precursor diffusion slit GS disperses the precursor into the closed loop Direction.

The electrode 423 is provided in the space between the magnetic poles 413a and 413b, that is, below the closed loop space. A power source (V) is connected to the electrode 423, and the power source (V) is a high voltage of AC or DC.

When a high voltage is applied to the electrode 423, heat is generated in the electrode 423. Therefore, in order to cool the heat, the electrode 423 may have a cooling tube CT made by machining the electrode. The cooling tube (CT) is made of a metal having excellent electrical conductivity and thermal conductivity, and cooling water flows in the cooling tube (CT).

The insulating fixing portion 431 is filled between the inner surface of the magnetic tape and the outer surface of the electrode 423 to fix the electrode 423 inside the magnetic tape. At this time, the insulating fixing part 431 is not filled at least between the central magnetic pole 413a and the outer magnetic pole 413b. The insulating fixing portion 431 is not filled in a part of the space where the magnetic poles 413a and 413b and the electrode 423 are opposed to each other to form a closed loop by the magnetic field and the electrode 423. [ It is possible to fill all the spaces when the insulating fixing portion 431 is filled between the inner surface of the magnetic tape and the outer surface of the electrode 423, .

The insulating fixing portion 431 may be formed of any one of ceramic, mica, stearate, quartz glass, soda glass, lead glass, polyester, polyethylene, polystyrene, polypropylene, polyvinyl chloride, natural rubber, ebonite, butyl rubber, chloroprene rubber , Silicone rubber, epoxy resin varnish resin varnish, fluorine resin, Teflon resin, engineering plastic such as PEEK (PEEK), and the like.

The insulating fixing portion 431 may have a depression on the end face in the direction of the magnetic poles 413a and 413b. The depressions can be formed in various shapes such as a triangle, a square, a circle, and a polygon. The depression is located between the magnetic poles 413a and 413b and the electrode 423 and can effectively prevent a short circuit when a surface is made long and a contamination prevention function is added to a part. If the etchant contaminants generated by etching the ion source or the accessory equipment in the process chamber by the plasma ion itself or the plasma electron are deposited on the end face of the insulating fixture 431, the impurities 413a and 413b Electrode 423 may be short-circuited. Such a short circuit must be deposited on the entire inner surface of the depression of the plasma ion or the etchant contaminant, but it is not easy to deposit plasma ions or etch contaminants in the depression due to the nature of the deposition. As a result, the depressed portion of the insulating fixing portion 431 can be an effective means for preventing short-circuit between the magnetic poles 413a and 413b and the electrode 423. [ Furthermore, by adjusting the width or depth of the depressed portion, it is possible to enhance the effect of preventing short-circuiting between the magnetic poles 413a and 413b and the electrode 423.

The depression of the insulating fixing part 431 may further include a protrusion protruding from the periphery thereof to the center of the depression, which may make it difficult to deposit plasma ions or etch contaminants.

Further, it is possible to further include a cover for partially closing the opening of the depression. Since it is almost impossible to deposit plasma ions or etching contaminants on the lower surface of the cover, it is possible to more effectively block short-circuiting between the magnetic poles 413a and 413b and the electrode 423.

FIGS. 2A and 2B show other embodiments of the flexible object-to-be-processed apparatus.

FIG. 2A is a deposition apparatus having two ion sources, which can be used when two thin films of different kinds are deposited on the polymer film 250, or when one thin film is deposited as two layers. For example, the polymer film 250 can be used for alternately depositing a high refractive index oxide film and a low refractive index oxide film. Herein, the high refractive index oxide film includes Nb ₂ O ₅ , Ta ₂ O ₃ , TiO ₂ , the oxide film is SiO _2.

FIG. 2B is a deposition apparatus having three or more ion sources. In the case of depositing two pairs of thin films of different kinds in the polymer film 250, or when depositing one thin film into three or more layers . For example, this may be the case where one of Nb ₂ O ₅ , Ta ₂ O ₃ , and TiO ₂ , which are high refractive index oxides, and SiO ₂ , which is a low refractive oxide, are alternately stacked.

As described above, the deposition apparatus having a plurality of ion sources can be used when a plurality of deposits are deposited on the polymer film 250, or when stacking different stacks in order, and even if one kind of deposition material is used, It can be used even when the thickness is increased.

Fig. 3 illustrates a multi-loop ion source used in a flexible object-to-be-processed apparatus.

As shown in FIG. 3, the electromagnetic field portion includes magnet portions 611a and 611b, magnetic pole portions 613a to 613c, and magnet portions 611a and 611b. And a core portion 615, and forms two circular or elliptical loop spaces therein. The loop space formed by the electromagnetic field section is opened toward the magnetic pole portions 613a to 613c and closed or opened toward the magnetic core portion 615. [

The magnet portions 611a and 611b are respectively disposed at the lower ends of the magnetic pole portions 613a and 613b and are constituted by a permanent magnet or an electromagnet. For example, an upper end of the central magnet portion 611a is formed of an N pole and a lower end thereof is formed of an S pole, so that a magnetic field causes a closed circuit to be formed by the magnetic pole portion and the core portion.

In the case of Fig. 3, the relationship between the number of multi-loops to be formed and the number of magnet arrays can be expressed as "number of magnet arrays = (2 x number of loops) -1 ". Here, the number of magnetic arrays and the number of loops are natural numbers of 1, 2, 3, ....

The magnetic pole portions 613a to 613c are spaced apart from each other by a predetermined distance in the substrate direction. The magnetic pole portions 613a to 613c are alternately arranged with N poles and S poles with a loop interposed therebetween. For example, when the central magnetic pole portion 613a is an N pole, the adjacent magnetic pole portion 613b is an S pole, and the edge magnetic pole portion 613c is an N pole by a magnetic core portion 615. [ In this case, the lower end of the central magnetic pole portion 613a is coupled to the upper N pole of the magnet portion 611a, and the lower end of the adjacent magnetic pole portion 613b is coupled to the upper S pole of the magnet portion 611b.

The magnetic core portion 615 connects the lower end of all the magnet portions 611a and 611b to the edge magnetic pole portion 613c to make the entire magnetic field passage so that the edge magnetic pole portion 613c has an S pole.

Electrodes 623a and 623b are provided below the loop space between the magnetic pole portions 613a to 613c. The power sources V11 and V12 are supplied to the electrodes 623a and 623b and the power sources V11 and V12 may be the same voltage or different voltages.

The insulating fixing portions 633a and 633b are filled between the inner surface of the magnetic recording portion and the outer surfaces of the electrodes 623a and 623b to fix the electrodes 623a and 623b inside the magnetic recording portion. Hereinafter, the detailed description of the insulating fixing parts 633a and 633b will be omitted from the description of the insulating fixing part 431 in FIG. 1A.

Although the present invention has been described based on various embodiments, it is intended to exemplify the present invention. Those skilled in the art will recognize that the technical idea of the present invention can be variously modified or modified based on the above embodiments. However, such variations and modifications may be construed to be included in the following claims.

100: process chamber 110: vacuum pump
210: feed roll 220: winding roll
230a, 230b: guide roll 250: polymer film
300: drum 400, 401 to 450: ion source
500: raw material supply part 510: raw material container
520: Evaporator 530: MFC

Claims (11)

In the vapor deposition apparatus,
A process chamber;
A drum disposed in the process chamber and moving the flexible object in a predetermined direction while rotating;
An ion source provided in the process chamber so as to face the drum and stacking a predetermined laminate on one surface of the flexible object to be processed; And
And a raw material supply unit for supplying a precursor of the laminate to the ion source,
Wherein the ion source is arranged such that one side facing the flexible object to be processed is opened and the other side is closed, a plurality of magnetic poles are alternately arranged in a spaced apart relationship on the open side, the closed side is connected with a magnetic core, A magnetic head forming an electronically accelerated closed loop; An electrode disposed at a lower portion of the accelerating closed loop of the magnetic circuit so as to be spaced apart from the magnetic circuit; And an insulating fixing part which is filled at least between the inner surface of the magnetic circuit and the outer surface of the electrode except for the space of the accelerator closed loop to fix the electrode to the magnetic circuit internally, And generates plasma ions to be supplied to the flexible object to be processed. The ion source according to claim 1, wherein the insulation fixing portion of the ion source
And has a depressed portion on an end face facing the opening side. 3. The apparatus of claim 2, wherein the depression
And a projection projecting from the edge to the center. The method of claim 1, wherein the stimulus of the ion source
A precursor inlet through which the precursor flows;
A precursor channel communicating with the precursor inlet and formed along the longitudinal direction within the magnetic pole;
And a precursor diffusion slit communicating with the precursor channel and communicating in the direction of the accelerating closed loop. The method according to claim 1, wherein the raw material supply portion
A raw material container for storing a liquid raw material;
A vaporizer for applying a heating or ultrasonic vibration to the raw material container to form a precursor from the liquid raw material;
And an MFC (Mass Flow Controller) for controlling the amount of the precursor supplied to the ion source. 6. The method of claim 5,
Wherein the flexible object to be processed is a polymer film,
And the laminate is TiO _2, SiO _2, or Al ₂ O _3, and
Wherein the liquid raw material is TiCl ₄ , TMDSO (tetramethyldisiloxane), or TMAL (trimethyaluminum). The method according to claim 1, wherein the raw material supply portion
A raw material container for storing the gas raw material;
And an MFC (Mass Flow Controller) for controlling the amount of the gas raw material supplied to the ion source. 8. The method of claim 7,
Wherein the flexible object to be processed is a polymer film,
The laminate is a diamond like carbon (DLC), and
Wherein the gas raw material is methane gas. The method according to claim 1,
Wherein the flexible object to be processed is a polymer film,
Wherein said laminate paired SiO ₂ with one of Nb ₂ O ₅ , Ta ₂ O ₃ and TiO ₂ . 2. The apparatus of claim 1, wherein the ion source
And forms an accelerated closed loop of the plasma electron in multiple. 11. The method of claim 1 or 10, wherein the ion source
Wherein a plurality of layers are provided according to the thickness, type, and stacking order of the laminate.

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