GB2508129B - Semiconductor device driving unit - Google Patents

Semiconductor device driving unit Download PDF

Info

Publication number
GB2508129B
GB2508129B GB1216743.3A GB201216743A GB2508129B GB 2508129 B GB2508129 B GB 2508129B GB 201216743 A GB201216743 A GB 201216743A GB 2508129 B GB2508129 B GB 2508129B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
driving unit
device driving
unit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1216743.3A
Other languages
English (en)
Other versions
GB2508129A (en
GB201216743D0 (en
Inventor
Samuel Gibson Richard
Mark Wain Richard
Anthony Cottell Robert
Gwyn Williams Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nidec Control Techniques Ltd
Original Assignee
Nidec Control Techniques Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nidec Control Techniques Ltd filed Critical Nidec Control Techniques Ltd
Priority to GB1216743.3A priority Critical patent/GB2508129B/en
Publication of GB201216743D0 publication Critical patent/GB201216743D0/en
Priority to IN2540MU2013 priority patent/IN2013MU02540A/en
Priority to US14/030,402 priority patent/US8970263B2/en
Priority to CN201310430793.6A priority patent/CN103684372B/zh
Priority to CN201320582300.6U priority patent/CN203691215U/zh
Publication of GB2508129A publication Critical patent/GB2508129A/en
Application granted granted Critical
Publication of GB2508129B publication Critical patent/GB2508129B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
GB1216743.3A 2012-09-19 2012-09-19 Semiconductor device driving unit Expired - Fee Related GB2508129B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1216743.3A GB2508129B (en) 2012-09-19 2012-09-19 Semiconductor device driving unit
IN2540MU2013 IN2013MU02540A (enExample) 2012-09-19 2013-08-01
US14/030,402 US8970263B2 (en) 2012-09-19 2013-09-18 Semiconductor device driving unit
CN201310430793.6A CN103684372B (zh) 2012-09-19 2013-09-18 向半导体开关器件的栅极提供驱动信号的装置及方法
CN201320582300.6U CN203691215U (zh) 2012-09-19 2013-09-18 一种半导体器件驱动装置及包含其的变速传动装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1216743.3A GB2508129B (en) 2012-09-19 2012-09-19 Semiconductor device driving unit

Publications (3)

Publication Number Publication Date
GB201216743D0 GB201216743D0 (en) 2012-10-31
GB2508129A GB2508129A (en) 2014-05-28
GB2508129B true GB2508129B (en) 2020-02-26

Family

ID=47144534

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1216743.3A Expired - Fee Related GB2508129B (en) 2012-09-19 2012-09-19 Semiconductor device driving unit

Country Status (4)

Country Link
US (1) US8970263B2 (enExample)
CN (2) CN103684372B (enExample)
GB (1) GB2508129B (enExample)
IN (1) IN2013MU02540A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108199704A (zh) * 2018-01-26 2018-06-22 中国矿业大学 一种感性负载下mosfet开关控制方法
FR3105653B1 (fr) * 2019-12-22 2022-12-30 Valeo Equip Electr Moteur Système d’interrupteur, bras de commutation et carte electronique comprenant un tel bras de commutation
CN113470590A (zh) 2021-07-15 2021-10-01 Tcl华星光电技术有限公司 逻辑电路和显示面板
CN116366044B (zh) * 2023-03-28 2024-04-30 重庆大学 一种通过调节栅极电压提高功率器件过载的栅极驱动电路
CN116317480A (zh) * 2023-03-28 2023-06-23 重庆大学 一种通过降低栅极电阻提高功率器件过载的栅极驱动电路

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817381A2 (en) * 1996-07-05 1998-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device drive circuit
US20020057114A1 (en) * 2000-11-14 2002-05-16 Kim Min Keuk Circuit for driving gate of IGBT inverter
US20050253165A1 (en) * 2004-04-26 2005-11-17 Gary Pace Adaptive gate drive for switching devices of inverter
WO2006052667A2 (en) * 2004-11-05 2006-05-18 International Rectifier Corporation Driver circuit and method with reduced di/dt and having delay compensation
US20090315612A1 (en) * 2008-06-18 2009-12-24 Active-Semi, Inc. Switch driver with low impedance initial drive and higher impedance final drive
US20100079191A1 (en) * 2008-09-30 2010-04-01 Infineon Technologies Austria Ag Circuit for actuation of a transistor
US20110273220A1 (en) * 2010-05-04 2011-11-10 Feng Lin Optimal mosfet driver circuit for reducing electromagnetic interference and noise
US20120229942A1 (en) * 2011-03-09 2012-09-13 Mitsubishi Electric Corporation Gate circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286619A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
JP3161589B2 (ja) * 1996-10-17 2001-04-25 富士電機株式会社 電力変換器のゲート駆動回路
JP3432425B2 (ja) * 1998-08-05 2003-08-04 株式会社東芝 ゲート回路
US6943588B1 (en) * 2003-09-24 2005-09-13 Altera Corporation Dynamically-adjustable differential output drivers
JP4223379B2 (ja) * 2003-12-10 2009-02-12 三菱電機株式会社 スイッチングデバイスの制御装置およびモーターの駆動回路の制御装置
JP4315125B2 (ja) 2005-05-11 2009-08-19 トヨタ自動車株式会社 電圧駆動型半導体素子の駆動装置
JP2007228447A (ja) * 2006-02-27 2007-09-06 Hitachi Ltd スイッチング素子のゲート駆動回路
US8264256B2 (en) * 2008-10-15 2012-09-11 Infineon Technologies Austria Ag Driver and method for driving a device
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US8749278B2 (en) 2010-08-09 2014-06-10 Honda Motor Co., Ltd. Semiconductor device driving unit and method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817381A2 (en) * 1996-07-05 1998-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device drive circuit
US20020057114A1 (en) * 2000-11-14 2002-05-16 Kim Min Keuk Circuit for driving gate of IGBT inverter
US20050253165A1 (en) * 2004-04-26 2005-11-17 Gary Pace Adaptive gate drive for switching devices of inverter
WO2006052667A2 (en) * 2004-11-05 2006-05-18 International Rectifier Corporation Driver circuit and method with reduced di/dt and having delay compensation
US20090315612A1 (en) * 2008-06-18 2009-12-24 Active-Semi, Inc. Switch driver with low impedance initial drive and higher impedance final drive
US20100079191A1 (en) * 2008-09-30 2010-04-01 Infineon Technologies Austria Ag Circuit for actuation of a transistor
US20110273220A1 (en) * 2010-05-04 2011-11-10 Feng Lin Optimal mosfet driver circuit for reducing electromagnetic interference and noise
US20120229942A1 (en) * 2011-03-09 2012-09-13 Mitsubishi Electric Corporation Gate circuit

Also Published As

Publication number Publication date
CN203691215U (zh) 2014-07-02
GB2508129A (en) 2014-05-28
CN103684372B (zh) 2017-08-29
CN103684372A (zh) 2014-03-26
GB201216743D0 (en) 2012-10-31
US8970263B2 (en) 2015-03-03
US20140077848A1 (en) 2014-03-20
IN2013MU02540A (enExample) 2015-06-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200526