GB2404668B - Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor - Google Patents

Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor

Info

Publication number
GB2404668B
GB2404668B GB0425329A GB0425329A GB2404668B GB 2404668 B GB2404668 B GB 2404668B GB 0425329 A GB0425329 A GB 0425329A GB 0425329 A GB0425329 A GB 0425329A GB 2404668 B GB2404668 B GB 2404668B
Authority
GB
United Kingdom
Prior art keywords
compound semiconductor
iii
group compound
manufacturing
manufacturing iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0425329A
Other versions
GB0425329D0 (en
GB2404668A (en
Inventor
Toshihisa Katamine
Yasushi Iyechika
Yoshihiko Tsuchida
Masaya Shimizu
Tomoyuki Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001147834A external-priority patent/JP4606642B2/en
Priority claimed from JP2001161711A external-priority patent/JP4663912B2/en
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority claimed from GB0211148A external-priority patent/GB2376694B/en
Publication of GB0425329D0 publication Critical patent/GB0425329D0/en
Publication of GB2404668A publication Critical patent/GB2404668A/en
Application granted granted Critical
Publication of GB2404668B publication Critical patent/GB2404668B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
GB0425329A 2001-05-17 2002-05-15 Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor Expired - Fee Related GB2404668B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001147834A JP4606642B2 (en) 2001-05-17 2001-05-17 Semiconductor manufacturing apparatus and compound semiconductor manufacturing method
JP2001161712 2001-05-30
JP2001161711A JP4663912B2 (en) 2001-05-30 2001-05-30 Semiconductor manufacturing equipment
GB0211148A GB2376694B (en) 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor

Publications (3)

Publication Number Publication Date
GB0425329D0 GB0425329D0 (en) 2004-12-22
GB2404668A GB2404668A (en) 2005-02-09
GB2404668B true GB2404668B (en) 2005-08-10

Family

ID=34069191

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0425329A Expired - Fee Related GB2404668B (en) 2001-05-17 2002-05-15 Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor
GB0425328A Expired - Fee Related GB2404667B (en) 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0425328A Expired - Fee Related GB2404667B (en) 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor

Country Status (1)

Country Link
GB (2) GB2404668B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
JPS63109172A (en) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド Low pressure chemical vapor deposition of metal silicide
US4756272A (en) * 1986-06-02 1988-07-12 Motorola, Inc. Multiple gas injection apparatus for LPCVD equipment
US4807562A (en) * 1987-01-05 1989-02-28 Norman Sandys Reactor for heating semiconductor substrates
EP0854210A1 (en) * 1996-12-19 1998-07-22 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
JP3042335B2 (en) * 1994-10-25 2000-05-15 信越半導体株式会社 Vapor phase growth method and apparatus
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US4756272A (en) * 1986-06-02 1988-07-12 Motorola, Inc. Multiple gas injection apparatus for LPCVD equipment
JPS63109172A (en) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド Low pressure chemical vapor deposition of metal silicide
US4807562A (en) * 1987-01-05 1989-02-28 Norman Sandys Reactor for heating semiconductor substrates
EP0854210A1 (en) * 1996-12-19 1998-07-22 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange

Also Published As

Publication number Publication date
GB2404667B (en) 2005-08-10
GB2404667A (en) 2005-02-09
GB0425329D0 (en) 2004-12-22
GB0425328D0 (en) 2004-12-22
GB2404668A (en) 2005-02-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060515