JPS63109172A - Low pressure chemical vapor deposition of metal silicide - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is directed to low pressure chemical vapor deposition (LPGV) of metal silicide.
D) Regarding the method. In particular, it relates to a method for chemical vapor deposition of molybdenum silicide onto a substrate at low pressure.

[Prior art and problems]

Traditionally, am circuit devices have made extensive use of polysilicon layers as self-adjusting gates for field effect transistors and for electrical interconnections between various components. Traditionally, polycrystalline silicon is doped with conventional donors or acceptors to reduce its resistance to 1 milliohm-centimeter. Since film thickness is limited to a maximum of 0.5 microns to allow patterning and good step coverage, it is difficult to obtain sheet resistances below approximately 20 ohms per square;
This value is too high for a product circuit.

This is because the resistance drop is too high.

In VLSI (Very Large Scale Integrated Circuit) technology, MOS
The highly doped polysilicon gate-contact material semi-E+ in (metal oxide semiconductor) is replaced by a layer bond exhibiting low resistance. For example, a combination of a 300nI11 thick doped polysilicon layer and a 200n thick metal dioxide layer. Here, as a metal,
molybdenum, tungsten or tantalum. Metal silicide has recently become a semiconductor! Its appeal is increasing as it has the potential to be used as an interconnection material for integrated circuits. In particular, two types of metal silicide and polycrystalline silicon
It has been found that one composite film provides a low resistance gate and interconnect layer for MO8 circuits and is compatible with current silicon gate technology.

Such structures are commonly referred to as ``polycide''. The sheet resistance of polycide is generally smaller than that of a single structure of only doped polycrystalline silicon. Polycide structures are used to achieve high conductivity gate-level metallization for MOS devices.More specifically, polycide structures are used as gate materials and interconnects in structures such as very high-speed integrated circuits (VH3ICs). For example, polycide structures are used in insulated gate field effect transistors (I
It has been used as a gate material in GFET) devices and other similar structures.

Conventional polycide structures are made by depositing undoped polycrystalline silicon by LPGVD, doping the polycrystalline silicon by diffusion with e.g. phosphorous chloride oxide, then doping with a refractory metal silicide, e.g. It was produced by co-depositing silicon from separate targets.

Tungsten disilicide has been attracting particular attention as a candidate for such applications.

This is because its electrical resistance is among the lowest among metal silicides. In addition, tungsten disilicide will grow a pad-baiting silicon oxide layer if a silicon source is provided and there is no bombardment by HF melt. Tungsten disilicide is formed by sintering a film of tungsten metal deposited on silicon by evaporation, sputtering, or chemical vapor deposition (CV I).
Tungsten disilicide can also be obtained by sintering a mixed tungsten and silicon film formed by co-evaporation, co-sputtering, or sputtering from a tungsten disilicide target.

As an improvement to these methods, U.S. Patent No. 4.359.4
No. 90 applies tungsten to the surface of semiconductor integrated circuits, etc.
An LPGVD method for co-depositing silicon with metals such as molybdenum, tantalum and niobium is disclosed.

In this method, the LPGVD reactor is heated to 500°C.
A temperature of ~700°C and a pressure of 0.1-0.3 Torr are maintained. Using a conventional CVD clean-up step, introduce silane into the reactor to deposit a base layer of polysilicon on the desired surface. Next, introduce e.g. Deposit the tantalum silicide layer at a rate of angstroms per minute.

A molybdenum disilicide film was also deposited by LPGVD. For example, J, E Iec, etc.
Lroel+e ring, Soe, 130.1603(1
983), the method of this document is carried out at 670°C.
A hot wall process is used.

LPCVD of tungsten silicide is also
5lid 5tate Technol such as rs etc.
April 1983, p. 183; Saraswat et al., IEEE Trans, Elect, Dev, ED.
-30, 1497 (1983); and Brors et al.
c, 1984, Chew, Vap, Depos,
, pp. 275-286, the method described in Brors et al.
wall) step is carried out at 350°C to 450°C. Currently, LPGVD technology is preferred. This is because it provides better step coverage than sputtering techniques, which is required for current submicron devices.

US Pat. No. 4,504,521 discloses a similar method. However, the method uses a doped amphorous solution prior to the deposition of the tantalum silicide layer.
ous) a silicon layer is first deposited. According to this patent, a smooth surface of 'l'asiz is deposited after annealing. This is disclosed in U.S. Patent No. 4.359.
This is different from the case of No. 490.

An additional method of depositing metal silicide is disclosed in US Pat. No. 4,557,943. In this method, a titanium silicide film, essentially a titanium disilicide, is deposited by chemical vapor deposition by reacting a gaseous silicon species with a gaseous titanium species in a plasma. A preferred reactive species is silane (Sit-1
4) and titanium tetrachloride. These are carried into the reaction chamber by an inert gas carrier such as argon. Since SiH< and TiCl4 decompose at different temperatures, they are unsuitable for producing films of mutually similar composition and thickness in an extended reaction zone. In accordance with the present invention, plasma enhanced chemical vapor deposition (P
After zero decomposition, in which the decomposition reaction takes place in a relatively low temperature (450°C) plasma, the material is annealed at 600-700°C by means of an alternating electric field by a method called (ECVD).

In addition to the prior art mentioned above, the following documents may be cited:

S 1nba, J., Vae, Sci.
Tecbnol, 19°F78 (19
81): d' Heurle, Proe, E 1e
etroches+, Soc, 1982. V
LSI Sci, Tecb, , pp 19
4-212; Crowder et al.
I EEE Trans, Elect.

Dev, ED-26, 369 (1979);
Chow eL at,, I E E E
Trans, E feat.

Dev, E D-30, 1480 (1983);
Murarka, J., Va.C., Sci., Teeh.
Nol. 17°775, (1980); One drawback of prior art LPCVD methods is the poor adhesion of the metal silicide layer to the substrate. Other drawbacks are that although it is low temperature, there is no rapid heat treatment (non-RTP)
temperatures are too high for metallization on plastics and other non-refractory materials. And as a result of too high a temperature, undesirable redistribution of dopants within the sub-micron structures occurs.

Attempts to deposit molybdenum silicide by PCVD at 300-400<0>C have been unsuccessful due to excessive gas phase pre-reaction and MoFs.

[Summary of the invention]

The present invention performs low pressure chemical vapor deposition of metal silicides at temperatures that are at least about 100° C. lower than those conventionally used.

According to the invention, the walls of the LPGVD reactor, including the heating pedestal for holding the substrate, are cooled. As the pedestal is heated, the substrate temperature reaches the desired level depending on the metal silicide to be deposited. The metal halide and silane or disilane are fed separately into the deposition chamber and mixed at the entrance of a small baffle plate at the entrance.

Metal silicide is deposited on the substrate surface.

Preferably, the substrate is pretreated with H2 plasma before deposition.

[Description of Preferred Embodiments] The present invention provides metal silicide L on a substrate at low temperature.
The present invention relates to a method for performing PGVD. That is, low temperature is a temperature at least 100°C lower than the conventional temperature.According to the present invention, metal silicide can be deposited on a substrate in a temperature range of 50 to 450°C with metal and silicon sources. can. Low temperature treatment is important in the following points.

(1) It becomes possible to use lift-off (lift-ofI) technology.

(2) Do not redistribute dopants within submicron surfaces.

(3) As well as plastics and other non-heat resistant materials,
Metal silicides can be applied in GaAs technology (where it is desired to avoid differential thermal stress).

(4) The presence of aluminum within the substrate does not affect it.

The substrate receiving the metal silicide can be any material conventionally used in the electronics industry; a preferred substrate is a single crystal silicon wafer. The substrate may be partially treated, eg, doped, to create a conductive region; the substrate may be stripped of the oxide layer prior to metal silicide deposition, or may be left intact.

The substrate is placed within a conventional LPGVD reactor. The reactor includes a pedestal on which the substrate is placed. The pedestal is heated to the desired temperature depending on the metal compound and silicon compound used to form the metal silicide layer and the walls of the reactor are cooled. The cooling is
Polar cooling can be achieved by simply blowing air from outside the walls of the reactor, or by using a water jacket or the like. Whether active cooling or simple air cooling is used depends on the deposition temperature of the reactants chosen. Low temperatures are desired for the walls to avoid pre-reaction of the reactants. It has been found that if the walls are not cooled, the deposition rate is reduced by 50% at processing temperatures. For a selected deposition temperature, it is desirable to condition the reactor prior to the actual deposition of the substrate, where it is desirable to cool the gas supply line and chamber wall temperatures to below room temperature. This conditioning is achieved by depositing a metal silicide coating on the test substrate. The reactor is periodically cleaned, for example by N F s plasma, to prevent the growth of deposited metal silicide.

Once the substrate is placed in the reactor, the reactor pressure is typically reduced to the base pressure of the LPGVD system. Approximately 0.
Pressures of 0.05 to 5 Torr can be used. 0.2～
It is desirable to use a pressure of 0.3 Torr; if higher pressures are used, it is necessary to use a diluent gas to avoid gas phase reactions that occur due to the high concentrations of reactants.

Once the desired temperature and pressure are achieved, conventional initial CVD cleanup is preferably used to ensure reactor cleaning. In a preferred embodiment 13, the reactor is purged with H2 by a pump and flow purge technique.

After cleaning, it is desirable to payout the reactor to remove water. These steps are not required, but are preferred to ensure high quality manufacturing.

Prior to introducing the reactants into the reactor, it is desirable, but not necessary, to pre-treat the wafer with an H2 plasma; preferred parameters are
50W (particularly 20W) Hz plasma treatment. The 2H5 plasma treatment, with H2 plasma treatment preferred to clean the device and remove water from the substrate surface, increases the adhesion of the metal silicide to the substrate.

The reactants are then mixed behind a small baffle plate at the inlet, feeding the reactants into the reactor through different feed lines. The silicon reactant is Si
n, or Si2H, and the metal reactant may be MoF6, WF6, TaCl5 or TiCl0MoFs can be used with either SiH< or 5i2H@. Other metal reactants can be used with 5izHs. Other combinations do not reduce the deposition temperature, SiH4 or 5i
zHi is flowed into the reactor at a rate of 15-145 sccm. The flow rate can be considered as the flow rate for waferization. SiH over this range, or 5izl-
1, the flow rate is not critical to the final product; the flow rate of the metal reactant is more important.

If the flow rate exceeds about 10105 e, pre-reactions will occur; if the flow rate is less than 25 eq, the resistance of the metal silicide coating becomes too high. Thus, the flow rate of metal reactants ranges from about 28 CC1l to about 1
It is between 0 sccm.

A standard dump is used to avoid explosion of the reactants within the reactor.

The deposition temperature varies from 2 to 15 minutes depending on the desired thickness of the metal silicide layer.

250 at a deposition rate of 700 Å/min
A deposition time of 4 minutes is typically used to obtain a 0 angstrom metal silicide layer. If a silicon-based substrate is used, the metal silicide layer should be approximately 1.7-2.3 silicon/gold J% (Si/M
Preferably, the metal silicide has a ratio e>, ie the metal silicide is represented by MeSi×, where 1.7≦×≦2.
It is 3. If the substrate is a non-heat resistant material such as G@As or plastic, the ratio will be less than 1.7.
In this example, the maximum ratio is 2.3.

The heating temperature of the substrate depends on the reactants used. If the reactants are M o F s and SiH4, about 90°C ~
! A temperature of 70<0>C can be used, preferably a temperature of 120<0>C to 170<0>C. In a preferred embodiment, 150°C
temperature was used. If the reactants are MoFs and 5i
For 2H6, a temperature of about 40-90°C should be used; when WF is used as the reactant, and 5izHs, a temperature of about 180-250°C can be used.

TiCln or TaCl5 and 5i2 as reactants
When H, is used, the preferred temperature is 350-5
Determine the Si/Me ratio of the deposited film at various temperatures, which is 00°C (particularly 350-400°C).
By selecting the temperature range that yields the i/M e ratio, the appropriate temperature for each reactant combination can be determined.

The invention will be further elucidated by the following non-limiting specific examples. All temperatures are in °C.

Example: One inch of Mo5ixlli was deposited on a 4-inch wafer in an air-cooled fused silica pellet jar. The wafer was placed on a resistance heated 6 inch fused silica pedestal and heated to 120-350°C. Wafer temperature was calibrated by a third thermocouple in contact with the top surface of the test wafer. The temperature variation across the wafer was observed to be 110°C.

SiH, and MoF had different feed lines to the chamber and mixed behind a small baffle plate at the entrance. The flow rate of MoFs was regulated by two needle valves in series and calibrated by filling a known volume. The MoFs bottle and valve were housed in a vented 29°C constant temperature cabinet. 0.5~l
MoFs within the range of Qsccm were reproducible within ±10%. SiH< was adjusted from 0 to 300 sae+* using a mass flow controller. The deposition pressure was 0.
It varied between 2 and 0.3 torr.

The deposition chamber was evacuated using a 27cr wI corrosion resistant mechanical pump. I replaced the T1 O oil filter with a vapor deposition of about 10μ. By minimizing the exposure of the vacuum system to the atmosphere during 112 cleaning, pretreatment payout, and wafer unload/reload, the partial pressure of impurity gases, including H, O, can be reduced to 0.1%. Reactants, products and impurity gases which could be maintained below 0 were monitored by mass spectrometry. The Pel jar and heater were cleaned periodically with NF, plasma.

Rapid thermal treatment FJ (RTP) of Mo5ixllll was performed at 1100° C. for 30 seconds in a lamp annealer. The content of silicon and molybdenum was determined by Rutherford back scattering (RB S > 5%, since no oxygen impurities were detected. Black wax masking, 95% I-(NO, +
The thickness obtained with the 5% HF etch and stylus measurements were consistent with the RBS results and were used to calculate the deposition rate. Step coverage was determined by cross-sectional SEM.

Figure 1 shows the deposition temperature dependent on RTP resistance, Si/Mo ratio, and deposition rate over a range of 120 to 200°C. The three temperatures are almost constant up to 150°C and increase above 150°C. do. MoFs and Si at 150°C
The reaction with H4 changes, then more silicon is introduced into the film as the temperature increases. As a result, the evaporation rate and deposition temperature are increased.

For similar MoFm and S i H+, RTP
Resistance, Si/Mo ratio and deposition rate are 150-350
It shows a constant increase as the temperature rises in °C (Figure 2),
At temperatures above 250°C, the deposition rate decreases. This is probably
This is due to reactant loss to gas phase nucleation and/or adhesion to chamber walls.

Mo5ixl as a function of MoF at 150 °C
B! The characteristics are shown in FIG. 3, where the deposition rate increases linearly with MoFs flow rate. However, at high flow rates it drops. This is probably due to gas phase or chamber wall losses. In practice, the deposition rate M o
The same dependence on F was observed at 250 °C. In Figure 3, the RTP resistance is 5 scc
Although exhibiting a minimum at mM o F s that is not due to changes in film components, RTP resistance may be a function of microstructural differences within the deposited film that are correlated to the deposition rate.

S i /
M.

The ratio was determined to be approximately constant. In the case of 5iH1 of 3 to 5 See import and 15 to 135 Sce, the Si/Mo ratio was 2.0±0.1. The Si/Mo ratio by RBS did not change significantly in RTP (six samples). 150℃ RT
The P resistance is approximately constant at about 120 μΩ−1 at WF and flow rate of 3 scc+11 or more. Although the data for the 250"C sample is not complete, the RTP resistance shows a minimum as a function of MoF, similar to FIG.
The RTP resistance is independent of SiH at 150°C, but increases moderately as a function of SiH<flow rate at 250°C.

The film properties of poly/oxide coachite silicon wafers and oxide coachite silicon wafers are almost similar.

Tape tests were performed before and after TP annealing for 15 samples deposited under various conditions at temperatures ranging from 120 to 300 °C. Si/Mo ratio = 1.9-
6 samples deposited on oxide at 150 °C at 2.0, each with Si/Mo ratio = 1.7.1.8
．． and 120°C, 130°C and 140 at 1.9
One of the six 150° C. samples on oxide, including three samples deposited on poly/oxide at 0° C., failed the tape test but passed after annealing. The sample is subicular (spec
ular), the RTP bulk resistance was typically 10 times smaller than the deposited value.

Precursor II This example is one of the detailed trials following the method of Concrete PAl.
This is what led to the data mentioned in the concrete [Ml.

A 4 inch wafer with poly/oxide coating was stripped in a 10=1 HF dip for 1 minute. The wafers were loaded into a quartz Pelger that was air cooled by blowing air from outside the walls. The Pelger was heated to H
The zero-order wafer cleaned in step 2 was baked out at a pedestal temperature of 140° C. for 1 hour.

The wafer temperature was 150°C, followed by I for 20 min.
-1, plasma treatment was carried out at 40 W and 0.1 ) -L. MoFs and Si, each for 3.5s
The deposition temperatures at the pedestal and wafer were 141° C. and 150° C., respectively, flowing into the Pelger at ccm and 45 sec edge flow rates. The deposition time is
It was 10 minutes. The Si/Mo ratio of the deposited molybdenum silicide was determined to be 2.0. The deposition rate is 6
The rate was 20 angstroms/min. 11! The RTP resistance was 136 × 1 Ω-cw.

Two samples were prepared at 150° C. using 5itHs instead of L and SiH. The deposited molybdenum silicide films had Si/Mo ratios of 3 and 4. And the RT P resistances are 430 and 10
It was 00μΩ-cm+. These samples are SiH
, corresponding to the membrane produced at 250-300°C using
Si/M for MoSix films prepared using MoFs and SiH.

As the ratio and RTP resistance decrease with temperature drop,
Si7M requires low temperature to satisfy its thirst.

It is expected that the ratio and RTP resistance will result. 75~ using active cooling of chamber walls and gas supply lines
In the temperature range of 100°C, Si/ of 1.7 to 2.3
MoSix with Mo ratio is adjusted.

The reaction between the refractory metal and silicon in the cooling wall apparatus for producing two-claw 1'' MoSix mainly depends on the metallization society flux and the substrate temperature, MoF6 and Si H+
Or by using either 5128m,
Without compromising the purity of Mo5ixll and without affecting the vacuum system, a deposition temperature of at least 100 °C lower than that of WF, and SiH < cold wall apparatus can be utilized with WF, TaCl, or Ti as reactive species.
Similar results are obtained for thirst using C1 and 5LHs. That is, the deposition temperature is reduced by about 100°C.

The major advantage of the M o F s and S i H4 or 5itHs methods over the WF and SiH< methods is low temperature. Application to lift-off, a patterning technique that eliminates each step, can be considered. Low temperatures suppress the tendency to redistribute dopants within sub-micron structures.

The latter benefit is due to WFs, TaCl5 or T
Also obtained using iCl4 and 5i2H*.

MoSix can be deposited on non-refractory materials such as plastics. LPGVD technology also does not have better step coverage than physical vapor deposition (PVD) such as sputtering or evaporation, and therefore M
oSix offers advantages over PVD metallization on micron-sized (non-refractory) structures; in such applications, sintering is impractical and some compromise in resistance is required. x=1.7
The 120° C. membrane has an unsintered resistance of 900 μΩ-C, which is lower than the 1000 μΩ-cw 150° C. film. 100℃
The films are metal-rich and more conductive. Localized laser sintering lowers the resistance and increases the utility of MoSix as a low-temperature conformal metallization.

The disadvantage of MoSix film is that the conductivity after sintering is WSixJ
It is half of ii. M of 1.7≦X≦2.0
The oSix film is attached to the polysilicon after sintering. However, WSixJIg did not adhere, and the adhesion of MoSix with x=2 on 5iOz was excellent. This excellent adhesion is due to the low interfilm stress along with the low deposition temperature. The film's low stress and metal richness of 11% (100°C) allows for rapid sintering of Ifm Ga.
It has applicability to As technology.

M o F * and SiH< to yield MoSix
The reaction with r
In order to avoid silicon separation from the cm structure, a Si/2.1 to 2.2 Si/
A satisfactory Si/Mo ratio in MoSix, with a desirable Mo ratio, is obtained at a substrate temperature of 100°C. At this temperature, the spec.
ular) IBt is obtained. The bulk resistance of 120 μΩ-C- is twice that of W Si, but the adhesion is excellent. Additionally, the process temperature is approximately 20°C lower than that of WSix.
0° C. lower, which makes it possible to apply it to lift-off techniques.

Conformal metallization (non-RTP) on plastic or other non-refractory materials vl
It is deposited at a temperature of about

Although the invention has been described in terms of specific embodiments, many variations and modifications are possible.

[Brief explanation of the drawing]

Figure 1 shows the RTP resistance (μΩ-e11), Si/
M. 2 is a graph of ratio and deposition rate (Angstroms 7 minutes) versus deposition temperature. Vapor deposition conditions: O, Z5'f--le, 4.3 sccmMoF
s, 100 SCC edge SiH; Substrate: Thermal oxide - black mark Undoped polysilicon/oxide - open mark Figure 2 shows RTP resistance (μΩ-cm), Si7M. Figure 2 is a graph of deposition rate (Angstrom 7 min) versus deposition temperature. Vapor deposition conditions IO, Z8't--ru, 3.48 ecmMo
F*, 135SCe5i114: Substrate: Thermal oxide - black marks Undoped polysilicon/oxide - open marks Figure 3 shows RTP resistance (μΩ-cII+), Si7M. ratio and deposition rate (Angstrom 7 min) vs. MoF,
It is a graph of flow velocity (seam). Vapor deposition conditions: 0.25 Torr, 150°C, 100sec
iS i tl 4 ; Substrate: Thermal oxide Patent applicant: Parian Associated Incorporated, agent: Patent attorney: Sumio Takeuchi and 2 others, Gohan, CI62

Claims (1)

[Claims] 1. A method for low-pressure deposition of a metal silicide film on a substrate under low pressure, comprising the following steps: (a) A substrate is heated at about 40° C. in a reactor with cooled walls. Approximately 50 from
Maintaining temperature up to 0°C: (b) MoF_6, WF_6, TaCl_5 and Ti
a metal compound selected from the group consisting of Cl_4 and SiH
_4 and a silicon compound selected from the group consisting of Si_2H_6 are simultaneously introduced into the reactor,
The metal compound is WF_6, TaCl_5 or TiC
wherein the silicon compound is Si_2H_6 and a metal silicide having a silicon to metal ratio of about 2.3 or less is deposited on the substrate. 2. The method according to claim 1, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 3. The method described in claim 1, wherein the metal compound is MoF_6 and the silicon compound is Si.
H_4 and the temperature is between about 90°C and about 170°C. 4. The method according to claim 3, wherein: the temperature is between about 120°C and about 160°C. 5. The method according to claim 3, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 6. The method according to claim 4, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 7. The method according to claim 1, wherein the metal compound is MoF_6 and the silicon compound is Si
_2H_6 and the temperature is between about 40°C and about 90°C. 8. The method according to claim 7, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 9. The method according to claim 1, wherein the metal compound is WF_6 and the temperature is between about 180°C and about 250°C. 10. The method according to claim 9, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 11. The method according to claim 1, wherein the metal compound is TaCl_5 or TiCl_4,
and the temperature is between about 350°C and about 500°C. 12. The method according to claim 9, wherein: the temperature is between about 350°C and about 400°C. 13. The method according to claim 11, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 14. The method according to claim 12, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 15. The method of claim 1, wherein: the metal compound is introduced into the reactor at a flow rate of about 2 sccm to about 10 sccm; and the silicon compound is introduced into the reactor at a flow rate of about 15 sccm to about 145 sccm.
Introduced into the reactor at a flow rate of m: this method. 16. The method of claim 1, wherein: the silicon to metal ratio is from about 1.7 to about 2.3. 17. A method for low-pressure deposition of a molybdenum silicide film on a substrate under low pressure, comprising the following steps: (a) In a reactor with cooled walls, the substrate is heated from about 40°C to about 170°C. Maintaining the temperature: (b) MoF at a flow rate of about 2 sccm to about 10 sccm
simultaneously introducing into the reactor a silicon compound selected from the group consisting of SiH_4 and Si_2H_5 at a flow rate of about 15 sccm to about 145 sccm, the molybdenum silicide film having a silicon to molybdenum ratio of about 2.3 or less is deposited on the substrate,
However, the process. 18. The method according to claim 17, wherein: the silicon compound is SiH_4, and the temperature is about 90°C.
℃ to about 170℃: Method. 19. The method according to claim 18, wherein: the temperature is between about 120°C and about 160°C. 20. The method according to claim 17, wherein: the silicon compound is Si_2H_6, and the temperature is between about 40°C and about 90°C. 21. The method according to claim 17, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 22. The method according to claim 18, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 23. The method according to claim 19, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 24. The method according to claim 20, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 25. The method according to claim 17, wherein: the silicon to molybdenum ratio is from about 1.7 to about 2.3. 26. A method for low-pressure deposition of a molybdenum silicide film on a substrate under low pressure, comprising the following steps: (a) In a reactor with cooled walls, the substrate is heated from about 90°C to about 170°C. (b) Mo at a flow rate of about 23 sccm to about 10 sccm.
simultaneously introducing F_6 and SiH_4 into the reactor at a flow rate of about 15 sccm to about 145 sccm, wherein a molybdenum silicide film having a silicon to molybdenum ratio of about 2.3 or less is deposited on the substrate. process. 27. The method of claim 26, wherein: the temperature is between about 120°C and about 160°C. 28. The method according to claim 26, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 29. The method according to claim 27, wherein: prior to step (b), the substrate is subjected to H_2 plasma treatment in a reactor. 30. The method of claim 26, wherein: the silicon to molybdenum ratio is from about 1.7 to about 2.3. 31. The method of claim 27, wherein: the silicon to molybdenum ratio is from about 1.7 to about 2.3. 32. A method for low pressure deposition of a molybdenum silicide film on a substrate under low pressure, comprising the following steps: (a) In a reactor with cooled walls, the substrate is heated from about 90°C to about 170°C. (b) Treating the substrate with H_2 plasma: (c) MoF at a flow rate of about 2 sccm to about 10 sccm.
_6 and SiH_4 at a flow rate of about 15 sccm to about 145 sccm simultaneously into the reactor, and a molybdenum silicide film having a silicon to molybdenum ratio of about 2.3 or less is deposited on the substrate. process. 33. The method of claim 32, wherein: the temperature is between about 120°C and about 160°C. 34. The method according to claim 32, wherein: prior to step (b), the reactor is cleaned. 35. The method according to claim 32, wherein: the silicon to molybdenum ratio is from about 1.7 to about 2.3. 36. The method of claim 33, wherein: the silicon to molybdenum ratio is from about 1.7 to about 2.3.