GB2404667B - System for manufacturing III-V group compound semiconductor - Google Patents

System for manufacturing III-V group compound semiconductor

Info

Publication number
GB2404667B
GB2404667B GB0425328A GB0425328A GB2404667B GB 2404667 B GB2404667 B GB 2404667B GB 0425328 A GB0425328 A GB 0425328A GB 0425328 A GB0425328 A GB 0425328A GB 2404667 B GB2404667 B GB 2404667B
Authority
GB
United Kingdom
Prior art keywords
compound semiconductor
group compound
manufacturing iii
iii
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0425328A
Other versions
GB0425328D0 (en
GB2404667A (en
Inventor
Toshihisa Katamine
Yasushi Iyechika
Yoshihiko Tsuchida
Masaya Shimizu
Tomoyuki Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001147834A external-priority patent/JP4606642B2/en
Priority claimed from JP2001161711A external-priority patent/JP4663912B2/en
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority claimed from GB0211148A external-priority patent/GB2376694B/en
Publication of GB0425328D0 publication Critical patent/GB0425328D0/en
Publication of GB2404667A publication Critical patent/GB2404667A/en
Application granted granted Critical
Publication of GB2404667B publication Critical patent/GB2404667B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
GB0425328A 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor Expired - Fee Related GB2404667B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001147834A JP4606642B2 (en) 2001-05-17 2001-05-17 Semiconductor manufacturing apparatus and compound semiconductor manufacturing method
JP2001161711A JP4663912B2 (en) 2001-05-30 2001-05-30 Semiconductor manufacturing equipment
JP2001161712 2001-05-30
GB0211148A GB2376694B (en) 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor

Publications (3)

Publication Number Publication Date
GB0425328D0 GB0425328D0 (en) 2004-12-22
GB2404667A GB2404667A (en) 2005-02-09
GB2404667B true GB2404667B (en) 2005-08-10

Family

ID=34069191

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0425328A Expired - Fee Related GB2404667B (en) 2001-05-17 2002-05-15 System for manufacturing III-V group compound semiconductor
GB0425329A Expired - Fee Related GB2404668B (en) 2001-05-17 2002-05-15 Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0425329A Expired - Fee Related GB2404668B (en) 2001-05-17 2002-05-15 Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor

Country Status (1)

Country Link
GB (2) GB2404667B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
EP0709489A1 (en) * 1994-10-25 1996-05-01 Shin-Etsu Handotai Company Limited Method and apparatus for vapor phase growth
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US4756272A (en) * 1986-06-02 1988-07-12 Motorola, Inc. Multiple gas injection apparatus for LPCVD equipment
JPS63109172A (en) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド Low pressure chemical vapor deposition of metal silicide
US4807562A (en) * 1987-01-05 1989-02-28 Norman Sandys Reactor for heating semiconductor substrates
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5411590A (en) * 1987-06-24 1995-05-02 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US5458918A (en) * 1987-06-24 1995-10-17 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US5525157A (en) * 1987-06-24 1996-06-11 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US5819684A (en) * 1987-06-24 1998-10-13 Hawkins; Mark R. Gas injection system for reaction chambers in CVD systems
EP0709489A1 (en) * 1994-10-25 1996-05-01 Shin-Etsu Handotai Company Limited Method and apparatus for vapor phase growth
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection

Also Published As

Publication number Publication date
GB2404668B (en) 2005-08-10
GB0425328D0 (en) 2004-12-22
GB2404668A (en) 2005-02-09
GB2404667A (en) 2005-02-09
GB0425329D0 (en) 2004-12-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060515