GB2371146A - Dual damascene interconnect between conducting layers of integrated circuit - Google Patents

Dual damascene interconnect between conducting layers of integrated circuit Download PDF

Info

Publication number
GB2371146A
GB2371146A GB0121198A GB0121198A GB2371146A GB 2371146 A GB2371146 A GB 2371146A GB 0121198 A GB0121198 A GB 0121198A GB 0121198 A GB0121198 A GB 0121198A GB 2371146 A GB2371146 A GB 2371146A
Authority
GB
United Kingdom
Prior art keywords
layer
conductive member
level
conductive
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0121198A
Other languages
English (en)
Other versions
GB0121198D0 (en
Inventor
Richardson O Adebanjo
Yifeng Winston Yan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of GB0121198D0 publication Critical patent/GB0121198D0/en
Publication of GB2371146A publication Critical patent/GB2371146A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB0121198A 2000-08-31 2001-08-31 Dual damascene interconnect between conducting layers of integrated circuit Withdrawn GB2371146A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65244900A 2000-08-31 2000-08-31

Publications (2)

Publication Number Publication Date
GB0121198D0 GB0121198D0 (en) 2001-10-24
GB2371146A true GB2371146A (en) 2002-07-17

Family

ID=24616872

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0121198A Withdrawn GB2371146A (en) 2000-08-31 2001-08-31 Dual damascene interconnect between conducting layers of integrated circuit

Country Status (3)

Country Link
JP (1) JP2002164430A (enExample)
KR (1) KR20020018610A (enExample)
GB (1) GB2371146A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674404B2 (en) 2006-01-13 2014-03-18 Micron Technology, Inc. Additional metal routing in semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505682B1 (ko) 2003-04-03 2005-08-03 삼성전자주식회사 금속-절연체-금속 커패시터를 포함하는 이중 다마신 배선구조 및 그 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693563A (en) * 1996-07-15 1997-12-02 Chartered Semiconductor Manufacturing Pte Ltd. Etch stop for copper damascene process
FR2754391A1 (fr) * 1996-10-08 1998-04-10 Sgs Thomson Microelectronics Structure de contact a facteur de forme eleve pour circuits integres
US6028362A (en) * 1997-05-12 2000-02-22 Yamaha Corporation Damascene wiring with flat surface
GB2345791A (en) * 1999-01-12 2000-07-19 Nec Corp Interconnect having intermediate film functioning as etch stop and barrier film
US6100190A (en) * 1998-02-19 2000-08-08 Rohm Co., Ltd. Method of fabricating semiconductor device, and semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693563A (en) * 1996-07-15 1997-12-02 Chartered Semiconductor Manufacturing Pte Ltd. Etch stop for copper damascene process
FR2754391A1 (fr) * 1996-10-08 1998-04-10 Sgs Thomson Microelectronics Structure de contact a facteur de forme eleve pour circuits integres
US6239025B1 (en) * 1996-10-08 2001-05-29 Sgs-Thomson Microelectronics S.A. High aspect ratio contact structure for use in integrated circuits
US6028362A (en) * 1997-05-12 2000-02-22 Yamaha Corporation Damascene wiring with flat surface
US6100190A (en) * 1998-02-19 2000-08-08 Rohm Co., Ltd. Method of fabricating semiconductor device, and semiconductor device
GB2345791A (en) * 1999-01-12 2000-07-19 Nec Corp Interconnect having intermediate film functioning as etch stop and barrier film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674404B2 (en) 2006-01-13 2014-03-18 Micron Technology, Inc. Additional metal routing in semiconductor devices

Also Published As

Publication number Publication date
KR20020018610A (ko) 2002-03-08
JP2002164430A (ja) 2002-06-07
GB0121198D0 (en) 2001-10-24

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)