GB2369687A - Method of manufacturing semiconductor devices - Google Patents

Method of manufacturing semiconductor devices Download PDF

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Publication number
GB2369687A
GB2369687A GB0200338A GB0200338A GB2369687A GB 2369687 A GB2369687 A GB 2369687A GB 0200338 A GB0200338 A GB 0200338A GB 0200338 A GB0200338 A GB 0200338A GB 2369687 A GB2369687 A GB 2369687A
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GB
United Kingdom
Prior art keywords
photoresist
semiconductor substrate
carried out
monoethanolamine
dimethylsulfoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0200338A
Other versions
GB2369687B (en
GB0200338D0 (en
Inventor
Mi-Sook Jeon
Chun-Deuk Lee
June-Ing Gil
Pil-Kwonjun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970061935A external-priority patent/KR100271761B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0200338D0 publication Critical patent/GB0200338D0/en
Publication of GB2369687A publication Critical patent/GB2369687A/en
Application granted granted Critical
Publication of GB2369687B publication Critical patent/GB2369687B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A semiconductor device fabrication method comprises the steps of: a) carrying out an exposure and a development on a semiconductor substrate in order to selectively remove the photoresist deposited on a given film of the semiconductor substrate; b) etching the exposed portion of the given film by the selective removal of the photoresist; and c) carrying out a strip process for completely removing the photoresist remaining on the semiconductor substrate by using a mixture of monoethanolamine and dimethylsulphoxide, after the above selective removal of the photoresist.

Description

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Field of the Invention The present invention relates to a method of manufacturing semiconductor devices, and more particularly, to a method of manufacturing semiconductor devices including a strip process to remove photoresist by using a dimethylacetamide solution, or a mixing solution of monoethanolamine and dimethylsulfoxide.
Description of the Related Art Generally, the semiconductor device fabrication process involves a photo lithography for forming pattern on a semiconductor wafer according to the characteristics of the devices.
The photo lithography generally uses photoresist.
That is, in that process, the photoresist deposited on a semiconductor wafer is selectively removed by carrying out an array of processing steps such as exposure and development, etc. , and pattern according to the characteristics of a device is formed thereon.
The photoresist is divided into positive type and negative type, etc.
Or, it can be divided into I-line group, G-line group, or Deep UV group, etc. according to the wave length of light irradiated on the photoresist.
The above positive type and the negative type are divided depending on the selective removal of the region exposed to the light during the photoresist process.
That is, the positive type is the one in which the exposed region of the photoresist deposited on the semiconductor substrate is selectively removed, and the negative type is the one in which the no-exposed region of the photoresist deposited on the substrate is selectively removed.
In addition, the I-line group, G-line or Deep-UV group according to the wave length are divided by the wave-length from the spectrum of the Hg-Arc lamp used as the general light source in the semiconductor device manufacturing process.
That is, the I-line group is the one that the photoresist responses to the wave length of 365 nm. The G-line group is the one that the photoresist responses to the wave length of 436 nm, and the Deep-UV group is 248 nm.
In the conventional semiconductor device fabrication process, photoresist of I-line group and positive-type is normally used. That is, the photoresist portion exposed to the light of 365 nm of wavelength is selectively removed.
However, the above conventional photo lithography process using the I-line group and positive type of photoresist has a technological limit, that is, the pattern size formed on the semiconductor substrate by this process is just 0.3 Am, which is not appropriate in the recent miniaturization trend of the pattern of semiconductor device.
Accordingly, in the recent semiconductor devices fabrication process, the photoresist of Deep-UV group is employed in order to form a pattern less than 0.2 Am.
However, the Deep-UV photoresist group is difficult to be applied to the process, either because the Deep-UV photoresist group is inferior to the I-line photoresist group in the aspect of the change to light or heat.
In other words, elements consisting of each of I-line group photoresist and the Deep-UV group photoresist, such as polymer, light-reactant, and a solvent to solve the above, are different from each other.
The photoresist of the Deep-UV group is not actively applied on the semiconductor device fabrication process because the chemical for use in the strip process to completely remove the remaining photoresist after the photo lithography is not developed yet, and therefore, it is not directly applied on the fabrication process.
Therefore, the conventional semiconductor device fabrication process has a limit because the removing solution in use in the strip process for removing a Deep
UV photoresist is not developed.
Summary of the Invention
The present invention is directed to provide a semiconductor device fabrication method including a strip process for removing a Deep-UV group photoresist, which substantially obviates one or more problems due to the limitations and the disadvantages of the related art.
To achieve this and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the semiconductor device fabrication method of the present invention is characterized to provide a strip process for completely removing the photoresist deposited on a semiconductor substrate by using dimethylacetamide.
The photoresist is preferably positive type one such that the portion thereof exposed to the light having a certain wavelength is selectively removed.
The photoresist is preferably an I-line group and positive one such that the portion thereof exposed to the light having 365 nm of wavelength is selectively removed.
The photoresist is preferably a Deep-UV group and positive one such that the portion thereof exposed to the light having 248 nm of wavelength is selectively removed.
Preferably, the strip process is carried out for less than 300 sec. by using the dimethylacetamide maintaining a temperature of about 10 C to 40oC.
In addition, the strip process is preferably carried out by spraying the dimethylacetamide on a semiconductor substrate having the photoresist deposited thereon.
A semiconductor device fabrication method comprising the steps of: a) carrying out an Exposure and a Development on a semiconductor substrate in order so as to selectively remove the photoresist deposited on a given film of the semiconductor substrate ; b) etching the exposed portion of the given film by the selective removal of the photoresist ; and c) carrying out a strip process for completely removing the photoresist remaining on the semiconductor substrate by using dimethylacetamide after the above selective removal of the photoresist.
The method further comprises a Baking process for. baking the photoresist before the Exposure.
The Baking process is preferably carried out at a temperature below 200 OC for less than 300 sec.
Preferably, the given film is an insulating film, or a metallic film, or multi-film including an insulating film and an metallic film.
The photoresist is preferably an I-line group and positive one such that the portion thereof exposed to the light having 365 nm of wavelength is selectively removed.
The photoresist is preferably a Deep-UV group and
positive one such that the portion thereof exposed to the light having 248 nm of wavelength is selectively removed.
The strip process is carried out for less than 300 sec. by using the dimethylacetamide maintaining a temperature of about 10 C to 400C.
The strip process is preferably carried out by spraying the dimethylacetamide on the semiconductor substrate having the photoresist deposited thereon.
The semiconductor device fabrication process of the present invention is characterized to carry out a strip process for completely removing the photoresist deposited on a semiconductor substrate by using a mixture of monoethanolamine and dimethylsulfoxide.
The above mixture preferably comprises 20 to 80 weight % of monoethanolamine and the remaining % of dimethylsulfoxide.
The photoresist is preferably positive type one such that the portion thereof exposed to the light having a certain wavelength is selectively removed.
The photoresist is preferably an I-line group and positive one such that the portion thereof exposed to the light having 365 nm of wavelength is selectively removed.
The photoresist is preferably a Deep-UV group and positive one such that the portion thereof exposed to the light having 248 nm of wavelength is selectively removed.
The photoresist is preferably negative type one such that the portion thereof exposed to the light having a
certain wavelength is selectively remained.
The photoresist is preferably an I-line group and negative type one such that the portion thereof exposed to the light having 365 nm of wavelength is selectively remained.
The photoresist is preferably a Deep-UV group and negative one such that the portion thereof exposed to the light having 248 nm of wavelength is selectively remained.
The strip process is carried out for less than 300 sec. by using a mixture of monoethanolamine and dimethylacetamide maintaining a temperature of about 10 C to 40oC.
The strip process is preferably carried out by spraying the monoethanolamine and the dimethylsulfoxide on the semiconductor substrate having the photoresist deposited thereon.
The strip process is preferably carried out by spraying the monoethanolamine and the dimethylsulfoxide respectively on the semiconductor substrate having the photoresist deposited thereon.
A semiconductor device fabrication method of the present invention comprises the steps of: a) carrying out an Exposure and a Development on a semiconductor substrate in order so as to selectively remove the photoresist deposited on a given film of the semiconductor substrate ; b) etching the exposed portion
of the given film by the selective removal of the photoresist ; and c) carrying out a strip process for completely removing the photoresist remaining on the semiconductor substrate after the above selective removal of the photoresist by using a mixture of monoethanolamine and dimethylsulfoxide.
The fabrication method further comprises a Baking process for baking the photoresist before the Exposure.
The Baking process is preferably carried out for less than 300 sec. at a temperature below 200 oc The fabrication method further comprises a process of rinsing the semiconductor substrate, wherein the photoresist thereon is completely removed by the strip process.
The rinsing process is preferably carried out for less than 120 sec. at a temperature of about 10 C to 40oC.
The rinsing process is carried out by using deionized water or acetone.
The given film is given film is an insulating film, or a metallic film, or multi-film including an insulating film and an metallic film.
The photoresist is preferably an I-line group and positive one such that the portion thereof exposed to the light having 365 nm of wavelength is selectively removed.
The photoresist is preferably a Deep-UV group and positive one such that the portion thereof exposed to the
light having 248 nm of wavelength is selectively removed.
The photoresist is preferably an I-line group and negative type one such that the portion thereof exposed
to the light h tvele-ngth is selectively remained.
The photoresist is preferably a Deep-UV group and negative one such that the portion thereof exposed to the light having 248 nm of wavelength is selectively remained.
The strip process is preferably carried out for less than 300 sec. by using a mixed developer of monoethanolamine and dimethylsulfoxide maintaining a temperature of about 10 oc to 400C.
The strip process is preferably carried out by spraying monoethanolamine and dimethylsulfoxide on the semiconductor substrate having still-remaining photoresist on the certain portion thereon.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Brief Description of the Drawings In the accompanying drawings : Fig. 1 is a processing sequence of one embodiment of
the semiconductor device fabrication method according to the present invention ; Fig. 2 is a schematic representation showing a spincoater for carrying out the Strip process in Fig. 1 Fig. 3 is a processing sequence of another embodiment of the semiconductor device fabrication method according to the present invention ; Fig. 4 is a schematic representation showing a spincoater for carrying out the Strip process in Fig. 3 and Fig. 5 is a graphical representation showing the production yield of the semiconductor. devices according to the fabrication method of the present invention.
Detailed Description of the Preferred Embodiments Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
Fig. 1 is a processing sequence of one embodiment of the semiconductor device fabrication method according to
the present invention, Fig. 2 is a schematic . representation showing a spincoater for carrying out the Strip process in Fig. 1, Fig. 3 is a processing sequence of another embodiment of the semiconductor device fabrication method according to the present invention,
Fig. 4 is a schematic representation showing a spincoater for carrying out the Strip process in Fig. 3, and Fig. 5 is a graphical representation showing the production yield of the semiconductor devices according to the fabrication method of the present invention.
According to the present invention, a first embodiment is the semiconductor fabrication method including a Strip process using dimethylacetamide, and a second embodiment is the one including a Strip process using monoethanolamine and dimethylsulfoxide.
A first example Fig. 1 shows a processing sequence of photolithography including a Strip process using dimethylacetamide of the present invention.
According to Fig. l, it comprises the steps of depositing photoresist on a semiconductor substrate, baking the photoresist, exposing the photoresist to the light having a certain wavelength, removing the photoresist selectively, etching a predetermined film exposed by the Development, and completely removing the photoresist remaining on some portion of the semiconductor substrate.
The photoresist of the present invention is a positive type photoresist such that the portion thereof exposed to the light having a certain wavelength is selectively removed, and the wavelength of the light used
in the Exposure is 365 nm or 248 nm.
The present invention employs an I-line group and positive type photoresist, wherein a predetermined portion thereof is selectively removed by the light having 365 nm of wavelength, or a Deep-UV group and positive type photoresist, wherein a predetermined portion thereof is selectively removed by the light having 248 nm of wavelength.
Dimethylacetamide is employed as the chemical for completely removing the photoresist in the Strip process of the present invention.
The first embodiment of the present invention provides photo-lithography process using a Deep-UV group and positive type photoresist (product name: UV III, manufacturer: SHIPLY).
First, the Deep-UV group and positive type photoresist is deposited over a given film on a semiconductor substrate.
The given film is an insulating film, or a metallic film, or multi-film including an insulating film and an metallic film.
The deposition of the photoresist, as shown in Fig.
2, employs a spray type of a spincoater 10 to deposit the photoresist by using a nozzle 12 and rotating a semiconductor substrate.
Then, a solvent remaining in the photoresist deposited on the semiconductor substrate is removed, and
a baking process is carried out in order to provide a stabilization of the photoresist.
The Baking process of the present invention is carried out at a temperature lower than 200 OC for less than 300 sec. In the embodiment, it is carried out at a temperature of 100 oc for 120 sec.
Next, an Exposure is carried out so as to selectively expose the photoresist to the light having a 248 nm of wavelength.
The Exposure process can adopt a step and step method, or a scan method, etc.
Then, a Development is carried out so as to remove the portion of the photoresist selectively exposed to light. Subsequently, an Etching process is carried out so as to etch the given film exposed by the selective removal of the photoresist.
Next, a Strip process is carried out so as to completely remove the photoresist remaining on the certain portion on the semiconductor substrate by the Development.
According to the present invention, the Strip process is carried out by using a dimethylacetamide maintaining a temperature of 10 to 40 OC and for less than 300 sec.
In the embodiment, the Strip process is carried out by using the demethylacetamide maintaining a temperature of 25 oc for 180 sec.
In addition, the Strip process of the present invention is carried out by spray type using a spincoater 10 as shown in Fig. 2. That is, in the Strip process, a nozzle 12 to spray the dimethylacetamide is provided on the spincoater 10 to deposit the photoresist.
The photo-lithography of the present invention uses an Iline group and positive type photoresist (product name : THMR i3100).
Since the photoresist is an I-line group, the light having a wavelength of 365 nm is used in the Exposure process. After the photolithography, the Strip process of the present invention uses the dimethylacetamide.
As a result, it can remove both of a Deep-UV group and positive type photoresist, and an I-line group and positive type photoresist.
In the first embodiment of the present invention, since the dimethylacetamide is used as remover for the photoresist, the I-line group photoresist as well as the Deep-UV group photoresist can be used in the semiconductor device fabrication process.
The photoresist can be selected according to the kinds of the pattern.
In addition, since the Strip process of the present invention is carried out with spray method by using the spincoater 10, and it does not need the standby-time required in the conventional Strip process using H2SO41 it is time-saving shortening the processing time.
The Dimethylacetamide affects less on the sub-layer, the given film than the conventional sulfuric acid, and it also shows similar results for the films before the photo-lithography is performed thereon.
Accordingly, the first embodiment of the present invention applying the Dimethylacetamide on the Strip process shows the various usage of the photoresist and the time-saving advantage for the fabrication process.
A second example Fig. 3 is a processing sequence of the photolithography including the Strip process of the present invention using Monoethanolamine and Dimethylsulfoxide.
According to Fig. 3, it comprises the steps of depositing photoresist on a semiconductor substrate, baking the photoresist, exposing the photoresist to the light having a certain wavelength, carrying out the Development in order to remove the photoresist selectively, etching a predetermined film exposed by the Development, and completely removing the photoresist remaining on some portion of the semiconductor substrate in the Strip process, and rinsing the semiconductor substrate.
The photoresist of the present invention is a positive type photoresist such that the portion thereof exposed to the light having a certain wavelength is selectively removed, or it can be a negative type
photoresist such that the portion thereof exposed to the light having a certain wavelength is selectively remained.
The wavelength of the light used in the Exposure is 365 nm or 248 nm.
The present invention employs an I-line group and positive type photoresist, wherein a predetermined portion thereof is selectively removed by the light having 365 nm of wavelength, or a Deep-UV group and positive type photoresist, wherein a predetermined portion thereof is selectively removed by the light having 248 nm of wavelength.
A mixture of Monoethanolamine and Dimethylsulfoxide is employed as the chemical for completely removing the photoresist in the Strip process of the present invention.
The mixture comprises 20 to 80 weight percent of Monoethanolamine and the remaining percent of Dimethylsulfoxide, and in the second embodiment of the present invention, a mixture comprising 60 weight percent of Monoethanolamine and the remaining percent of Dimethylsulfoxide can be used as the remover.
In the present invention, the photoresist of Deep-UV type and the positive type (product name: UV III) is used in the photo-lithography.
The photoresist of the Deep-UV group and the positive type is deposited on the given film of the
semiconductor substrate.
The given film is an insulating film, or a metallic film, or multi-film including an insulating film and an metallic film.
The photoresist is deposited on the semiconductor substrate by using a spray-type of a spincoater 10, wherein a nozzle 12 sprays the photoresist and the semiconductor substrate is rotated.
A solvent remaining in the photoresist deposited on the semiconductor substrate is removed, and a Baking process is carried out in order to provide a stabilization on the photoresist.
The Baking process of the present invention is carried out at a temperature up to 200 oc and for less than 300 sec. In the embodiment, it is carried out at a temperature of 100 oc for 120 sec.
Then, the photoresist is selectively exposed to the light having a wavelength of 248 nm. The Exposure process employs a step and step method or a scan method, etc. Then, the portion of the photoresist selectively exposed to light is removed in the Development process.
Subsequently, an Etching process is carried out so as to etch the sub-layer, a certain portion on the semiconductor substrate exposed by the Development process.
After carrying out the Etching process, a Strip process is carried out so as to completely remove the
photoresist remaining on the semiconductor substrate.
The strip process is preferably carried out for less than 300 sec. by using a mixed remover of monoethanolamine and dimethylsulfoxide, a remover, maintaining a temperature of about 10 OC to 40oC.
In the embodiment, the mixture is maintained at a temperature of 25 OC and the Strip process is carried out for 180 sec. The Strip process of the present invention, as shown in Fig. 4, is carried out with spray type using the spincoater 10. That is, nozzles 12 for spraying the monoethanolamine and the dimethylsulfoxide respectively are provided on the spincoater 10 for the Strip process.
Then, after the Strip process, a rinsing process is carried out for rinsing the semiconductor substrate.
The rinsing process is carried out for removing the remover remaining on the semiconductor substrate after the Strip process, and it depends on the viscosity of the remover.
The rinsing process of the present invention is carried out for 120 sec. at a temperature of 10 to 40 OC, and in the embodiment, it is carried out for 60 sec. at a temperature of 25 OC.
Deionized water, or aceton, etc. are used in the rinsing process, or besides the deionized water, and aceton, ethylpyruvate, tetrahydrofurane, propyleneglycolmonoethylacetate, T-butyrolactone, Nmethyl-2-pyrollidone, N-butylacetate, etc. or a mixture
of the above chemicals are used in the rinsing process.
The rinsing process, as shown in Fig. 4, employs a spincoater 10 having a nozzle 12. That is, using the nozzle 12 of the spincoater 10, the chemicals used in the rinsing process are sprayed.
Then, photo-etching process including the Strip process, which is constructed in such a manner as described above, is carried out by using a Deep-UV group and negative type photoresist (product name: TDUR-N908).
Since the photoresist is negative type, the portion thereof exposed to light in the Development is selectively remained.
In addition, the present invention provide a photoetching process including a Strip process carried out in such a manner described above by using an I-line group and a positive type of photoresist (product name: THMR i3100, manufacturer: TOK).
Since the photoresist is an I-line group, light having a wavelength of 365 nm is used in the Exposure.
The Strip process of the photo-etching process of the present invention uses a mixture of monoethanolamine and dimethylsulfoxide.
As a result, various kinds of photoresist, such as a Deep-UV group and positive type, an I-line group and positive type, a Deep-UV group and negative type, and an I-line group and negative type, can be all removed.
The second embodiment of the present invention
employs a mixture of monoethanolamine and dimethylsulfoxide as a remover for removing the photoresist so that Deep-UV group and positive type of photoresist or negative type, and I-line group and positive type or negative type of photoresist can be used in the semiconductor device fabrication process. That is, photoresist can be selected according to the sophistication of the pattern.
The present invention employing spray type of a spincoater for the Strip process has an advantage of time-saving since it saves time for standby in the conventional Strip process using sulfuric acid.
In addition, the remover of mixing monoethanolamine and dimethylsulfoxide affect less on the given film than the conventional sulfuric acid, and it also shows similar results for the films before the photo-lithography is performed thereon.
Accordingly, the second embodiment of the present invention applying the above mixing remover on the Strip process shows the various usage of the photoresist and the time-saving advantage, for the fabrication process.
According to the first and the second embodiments of the present invention, the semiconductor device fabrication process is carried out and the result of analyzing the production yield is shown in the graph of Fig. 5.
That is, the production yield of the Strip process
using a mixture of dimethylacetamide, or monoethanolamine and dimethylsulfoxide of the present invention shows a better improvement than the conventional one using sulfuric acid.
Accordingly, by carrying out the fabrication process using the remover of the present invention as described above, the various selection of the photoresist is possible. Since it is possible to carry out a Strip process using a Deep-UV group photoresist, fine patterns having a size less than 0.2 m, which is required in the recent semiconductor device fabrication process, can be formed.
By using a spincoater 10 of the present invention (three nozzles are generally provided. ), the photoresist is deposited, a remover is sprayed in the Strip process, and the semiconductor substrate is rinsed so that the stand-by time is saved during the process.
Still further, while the present invention has been described in detail, it should be understood that various changes, substitutions and alterations can be made hereto without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (25)

CLAIMS:
1. A semiconductor device fabrication process, which is characterized to carry out a strip process for completely removing the photoresist deposited on a semiconductor substrate by using a mixture of monoethanolmine and dimethylsulfoxide.
2. A process according to Claim I, wherein the mixture comprises 20 to 80 weight % of monoethanolamine and the remaining % of dimethylsulfoxide.
3. A process according to Claim 1, wherein the photoresist is a positive type photoresist.
4. A process according to Claim 1, wherein the photoresist is a I-line group and positive type photoresist.
5. A process according to Claim 1, wherein the photoresist is a Deep-UV group and positive type photoresist.
6. A process according to Claim 1, wherein the photoresist is a negative type photoresist.
7. A process according to Claim 1, wherein the photoresist is an I-line group and negative type photoresist.
8. A process according to Claim 1, wherein the photoresist is a Deep-lav group and negative type photoresist.
9. A process according to Claim 1, wherein the strip process is carried out for less than 300 sec. by using a mixture of monoethanolamine and dimethylacetamide maintaining a temperature of about 10 C to 40oC.
10. A process according to Claim 1, wherein the strip process is carried out by spraying the monoethanolamine and the dimethylsulfoxide on the semiconductor substrate having the photoresist deposited thereon.
11. A process according to Claim 1, wherein the strip process is carried out by spraying the monoethanolamine and the dimethylsulfoxide respectively on the semiconductor substrate having the photoresist deposited thereon.
12. A semiconductor device fabrication method comprising the steps of : a) carrying out an Exposure and a Development on a semiconductor substrate in order so as to selectively remove the photoresist deposited on a given film of the semiconductor substrate; b) etching the exposed portion of the given film by the selective removal of the photoresist ; and c) carrying out a strip process for completely removing the photoresist remaining on the semiconductor substrate after the above selective removal of the photoresist by using a mixture of monoethanolamine and dimethylsulfoxide.
13. A method according to Claim 12, further comprising a Baking process for baking the photoresist before the Exposure.
14. A method according to Claim 13, wherein the Baking process is carried out for less than 300 sec. at a temperature below 200oC.
15. A method according to Claim 12, further comprising a process of rinsing the semiconductor substrate, wherein the photoresist thereon is completely removed by the strip process.
16. A method according to Claim 15, wherein the rinsing process is carried out for less than 120 sec. at a temperature of about 10 C to 40oC.
17. A method according to Claim 15, wherein the rinsing process is carried out by using deionized water or acetone.
18. A method according to Claim 12, wherein the given film is an insulating film, or a metallic film, or multi-film including an insulating film and an metallic film.
19. A method according to Claim 12, wherein the photoresist is an I-line group and positive type photoresist.
20. A method according to Claim 12, wherein the photoresist is a Deep-UV group and positive type photoresist.
21. A method according to Claim 12, wherein the photoresist is an I-line group and negative type photoresist.
22. A method according to Claim 12, wherein the photoresist is a Deep-lav group and negative type photoresist.
23. A method according to Claim 12, wherein the strip process is carried out for less
than 300 sec. by using a mixed developer of monoethanolamine and dimethylsulfoxide maintaining a temperature of about 10 C to 40oC.
24. A method according to Claim 12, wherein the strip process is carried out by spraying monoethanolamine and dimethylsulfoxide on the semiconductor substrate having still-remaining photoresist on the certain portion thereon.
25. A semiconductor device fabrication process substantially as hereinbefore described with reference to figures 3 to 5 of the accompanying drawings.
GB0200338A 1997-11-21 1998-07-03 Method of manufacturing semiconductor devices Expired - Fee Related GB2369687B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970061935A KR100271761B1 (en) 1997-11-21 1997-11-21 Manufacturing method of semiconductor device
GB9814540A GB2331594B (en) 1997-11-21 1998-07-03 A method of manufacturing a semiconductor device

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GB0200338D0 GB0200338D0 (en) 2002-02-20
GB2369687A true GB2369687A (en) 2002-06-05
GB2369687B GB2369687B (en) 2002-10-09

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WO2008058460A1 (en) * 2006-11-17 2008-05-22 Anji Microelectronics (Shanghai) Co., Ltd. A low etching property cleaning solution for thicker photoresist

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US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
WO1998050516A1 (en) * 1997-05-05 1998-11-12 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition

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US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
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