GB2366078A - Semiconductor device retaining a resist layer as a buffer layer - Google Patents

Semiconductor device retaining a resist layer as a buffer layer Download PDF

Info

Publication number
GB2366078A
GB2366078A GB0105919A GB0105919A GB2366078A GB 2366078 A GB2366078 A GB 2366078A GB 0105919 A GB0105919 A GB 0105919A GB 0105919 A GB0105919 A GB 0105919A GB 2366078 A GB2366078 A GB 2366078A
Authority
GB
United Kingdom
Prior art keywords
layer
resist
semiconductor device
buffer layer
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0105919A
Other languages
English (en)
Other versions
GB0105919D0 (en
Inventor
Daniel P Chesire
Edward A Ehrlacher
William C Finley
Ronald R Gorham
Barbara D Kotzias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of GB0105919D0 publication Critical patent/GB0105919D0/en
Publication of GB2366078A publication Critical patent/GB2366078A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
GB0105919A 2000-03-09 2001-03-09 Semiconductor device retaining a resist layer as a buffer layer Withdrawn GB2366078A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52158600A 2000-03-09 2000-03-09

Publications (2)

Publication Number Publication Date
GB0105919D0 GB0105919D0 (en) 2001-04-25
GB2366078A true GB2366078A (en) 2002-02-27

Family

ID=24077294

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0105919A Withdrawn GB2366078A (en) 2000-03-09 2001-03-09 Semiconductor device retaining a resist layer as a buffer layer

Country Status (3)

Country Link
JP (1) JP2001284499A (ja)
KR (1) KR20010088439A (ja)
GB (1) GB2366078A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844826B2 (en) 2006-07-10 2014-09-30 Nxp B.V. Integrated circuit transponder, method of producing an integrated circuit and method of producing a transponder

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328262A (en) * 1979-07-31 1982-05-04 Fujitsu Limited Method of manufacturing semiconductor devices having photoresist film as a permanent layer
EP0122631A2 (en) * 1983-04-15 1984-10-24 Hitachi, Ltd. Electronic device having a multi-layer wiring structure
EP0251347A1 (en) * 1986-04-23 1988-01-07 Koninklijke Philips Electronics N.V. Method of covering a device with a first layer of silicon nitride and with a second layer of a polyimide, and device covered by means of the method
EP0275588A1 (en) * 1986-12-19 1988-07-27 Koninklijke Philips Electronics N.V. Method of fabricating a semiconductor device with reduced packaging stress
US5013689A (en) * 1985-08-14 1991-05-07 Mitsubishi Denki Kabushiki Kaisha Method of forming a passivation film
US5286679A (en) * 1993-03-18 1994-02-15 Micron Technology, Inc. Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328262A (en) * 1979-07-31 1982-05-04 Fujitsu Limited Method of manufacturing semiconductor devices having photoresist film as a permanent layer
EP0122631A2 (en) * 1983-04-15 1984-10-24 Hitachi, Ltd. Electronic device having a multi-layer wiring structure
US5013689A (en) * 1985-08-14 1991-05-07 Mitsubishi Denki Kabushiki Kaisha Method of forming a passivation film
EP0251347A1 (en) * 1986-04-23 1988-01-07 Koninklijke Philips Electronics N.V. Method of covering a device with a first layer of silicon nitride and with a second layer of a polyimide, and device covered by means of the method
EP0275588A1 (en) * 1986-12-19 1988-07-27 Koninklijke Philips Electronics N.V. Method of fabricating a semiconductor device with reduced packaging stress
US5286679A (en) * 1993-03-18 1994-02-15 Micron Technology, Inc. Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844826B2 (en) 2006-07-10 2014-09-30 Nxp B.V. Integrated circuit transponder, method of producing an integrated circuit and method of producing a transponder

Also Published As

Publication number Publication date
KR20010088439A (ko) 2001-09-26
GB0105919D0 (en) 2001-04-25
JP2001284499A (ja) 2001-10-12

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)