GB2363361B - A reactive ion etching process - Google Patents
A reactive ion etching processInfo
- Publication number
- GB2363361B GB2363361B GB0118719A GB0118719A GB2363361B GB 2363361 B GB2363361 B GB 2363361B GB 0118719 A GB0118719 A GB 0118719A GB 0118719 A GB0118719 A GB 0118719A GB 2363361 B GB2363361 B GB 2363361B
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching process
- reactive ion
- ion etching
- reactive
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9907302A GB2348399A (en) | 1999-03-31 | 1999-03-31 | Reactive ion etching with control of etch gas flow rate, pressure and rf power |
PCT/GB2000/001231 WO2000059020A1 (en) | 1999-03-31 | 2000-03-30 | A reactive ion etching process |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0118719D0 GB0118719D0 (en) | 2001-09-26 |
GB2363361A GB2363361A (en) | 2001-12-19 |
GB2363361B true GB2363361B (en) | 2003-04-02 |
Family
ID=10850638
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9907302A Withdrawn GB2348399A (en) | 1999-03-31 | 1999-03-31 | Reactive ion etching with control of etch gas flow rate, pressure and rf power |
GB0118719A Expired - Fee Related GB2363361B (en) | 1999-03-31 | 2000-03-30 | A reactive ion etching process |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9907302A Withdrawn GB2348399A (en) | 1999-03-31 | 1999-03-31 | Reactive ion etching with control of etch gas flow rate, pressure and rf power |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1166341A1 (en) |
AU (1) | AU3568500A (en) |
GB (2) | GB2348399A (en) |
WO (1) | WO2000059020A1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020158047A1 (en) * | 2001-04-27 | 2002-10-31 | Yiqiong Wang | Formation of an optical component having smooth sidewalls |
WO2003067293A1 (en) * | 2002-02-06 | 2003-08-14 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide manufacturing method |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176790A (en) * | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
US5431772A (en) * | 1991-05-09 | 1995-07-11 | International Business Machines Corporation | Selective silicon nitride plasma etching process |
EP0763850A1 (en) * | 1995-09-01 | 1997-03-19 | Applied Materials, Inc. | Etch process for forming contacts over a silicide layer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992134A (en) * | 1989-11-14 | 1991-02-12 | Advanced Micro Devices, Inc. | Dopant-independent polysilicon plasma etch |
JP2830978B2 (en) * | 1990-09-21 | 1998-12-02 | 忠弘 大見 | Reactive ion etching apparatus and plasma processing apparatus |
US5221425A (en) * | 1991-08-21 | 1993-06-22 | International Business Machines Corporation | Method for reducing foreign matter on a wafer etched in a reactive ion etching process |
JP2884970B2 (en) * | 1992-11-18 | 1999-04-19 | 株式会社デンソー | Dry etching method for semiconductor |
US5637190A (en) * | 1995-09-15 | 1997-06-10 | Vanguard International Semiconductor Corporation | Plasma purge method for plasma process particle control |
ATE251341T1 (en) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | METHOD FOR ETCHING SUBSTRATES |
AUPO281896A0 (en) * | 1996-10-04 | 1996-10-31 | Unisearch Limited | Reactive ion etching of silica structures for integrated optics applications |
-
1999
- 1999-03-31 GB GB9907302A patent/GB2348399A/en not_active Withdrawn
-
2000
- 2000-03-30 AU AU35685/00A patent/AU3568500A/en not_active Abandoned
- 2000-03-30 GB GB0118719A patent/GB2363361B/en not_active Expired - Fee Related
- 2000-03-30 WO PCT/GB2000/001231 patent/WO2000059020A1/en not_active Application Discontinuation
- 2000-03-30 EP EP00914290A patent/EP1166341A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5431772A (en) * | 1991-05-09 | 1995-07-11 | International Business Machines Corporation | Selective silicon nitride plasma etching process |
US5176790A (en) * | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
EP0763850A1 (en) * | 1995-09-01 | 1997-03-19 | Applied Materials, Inc. | Etch process for forming contacts over a silicide layer |
Non-Patent Citations (8)
Title |
---|
abstract BONDUR J A ET AL: "GAS MIXING TO PREVENT * |
BONAR J ET AL: "AEROSOL DOPED ND PLANAR SILICA WAVEGUIDE LASER" ELECTRONICS LETTERS,GB,IEE * |
document. DATABASE INSPEC 'Online! INSTITUTE OF * |
ELECTRICAL ENGINEERS, STEVENAGE, GB; Inspec No. AN5359690, DUTTA: "Prospects of vertical and smooth * |
etching of thick silicon oxide for opto-electronics integration" XP002145015 abstract * |
POLYMER FORMATION DURING REACTIVE ION ETCHING" IBM TECHNICALDISCLOSURE BULLETIN,US,IBM CORP.NEW YORK * |
STEVENAGE, vol.31, no.2, 19 January 1995 (1995-01-19), pages99-100, xp000504787 issn: 0013-5194 * |
vol.21, no.10, 1 March 1979 (1979-03-01), page 4016 XP002003416 ISSN: 0018-8689 the whole * |
Also Published As
Publication number | Publication date |
---|---|
GB2348399A (en) | 2000-10-04 |
EP1166341A1 (en) | 2002-01-02 |
GB2363361A (en) | 2001-12-19 |
GB0118719D0 (en) | 2001-09-26 |
WO2000059020A1 (en) | 2000-10-05 |
AU3568500A (en) | 2000-10-16 |
GB9907302D0 (en) | 1999-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090330 |