GB2363361B - A reactive ion etching process - Google Patents

A reactive ion etching process

Info

Publication number
GB2363361B
GB2363361B GB0118719A GB0118719A GB2363361B GB 2363361 B GB2363361 B GB 2363361B GB 0118719 A GB0118719 A GB 0118719A GB 0118719 A GB0118719 A GB 0118719A GB 2363361 B GB2363361 B GB 2363361B
Authority
GB
United Kingdom
Prior art keywords
etching process
reactive ion
ion etching
reactive
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0118719A
Other versions
GB0118719D0 (en
GB2363361A (en
Inventor
Jesus Miguel Ruano-Lopez
James Ronald Bonar
Andrew James Mclaughlin
Silva Marques Paulo Vicente Da
Michael George Jubber
Christopher D W Wilkinson
James Stewart Aitchison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Publication of GB0118719D0 publication Critical patent/GB0118719D0/en
Publication of GB2363361A publication Critical patent/GB2363361A/en
Application granted granted Critical
Publication of GB2363361B publication Critical patent/GB2363361B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
GB0118719A 1999-03-31 2000-03-30 A reactive ion etching process Expired - Fee Related GB2363361B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9907302A GB2348399A (en) 1999-03-31 1999-03-31 Reactive ion etching with control of etch gas flow rate, pressure and rf power
PCT/GB2000/001231 WO2000059020A1 (en) 1999-03-31 2000-03-30 A reactive ion etching process

Publications (3)

Publication Number Publication Date
GB0118719D0 GB0118719D0 (en) 2001-09-26
GB2363361A GB2363361A (en) 2001-12-19
GB2363361B true GB2363361B (en) 2003-04-02

Family

ID=10850638

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9907302A Withdrawn GB2348399A (en) 1999-03-31 1999-03-31 Reactive ion etching with control of etch gas flow rate, pressure and rf power
GB0118719A Expired - Fee Related GB2363361B (en) 1999-03-31 2000-03-30 A reactive ion etching process

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9907302A Withdrawn GB2348399A (en) 1999-03-31 1999-03-31 Reactive ion etching with control of etch gas flow rate, pressure and rf power

Country Status (4)

Country Link
EP (1) EP1166341A1 (en)
AU (1) AU3568500A (en)
GB (2) GB2348399A (en)
WO (1) WO2000059020A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
JPWO2003067293A1 (en) * 2002-02-06 2005-06-02 松下電器産業株式会社 Manufacturing method of optical waveguide
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
US5431772A (en) * 1991-05-09 1995-07-11 International Business Machines Corporation Selective silicon nitride plasma etching process
EP0763850A1 (en) * 1995-09-01 1997-03-19 Applied Materials, Inc. Etch process for forming contacts over a silicide layer

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US4992134A (en) * 1989-11-14 1991-02-12 Advanced Micro Devices, Inc. Dopant-independent polysilicon plasma etch
JP2830978B2 (en) * 1990-09-21 1998-12-02 忠弘 大見 Reactive ion etching apparatus and plasma processing apparatus
US5221425A (en) * 1991-08-21 1993-06-22 International Business Machines Corporation Method for reducing foreign matter on a wafer etched in a reactive ion etching process
JP2884970B2 (en) * 1992-11-18 1999-04-19 株式会社デンソー Dry etching method for semiconductor
US5637190A (en) * 1995-09-15 1997-06-10 Vanguard International Semiconductor Corporation Plasma purge method for plasma process particle control
EP1357584A3 (en) * 1996-08-01 2005-01-12 Surface Technology Systems Plc Method of surface treatment of semiconductor substrates
AUPO281896A0 (en) * 1996-10-04 1996-10-31 Unisearch Limited Reactive ion etching of silica structures for integrated optics applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431772A (en) * 1991-05-09 1995-07-11 International Business Machines Corporation Selective silicon nitride plasma etching process
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
EP0763850A1 (en) * 1995-09-01 1997-03-19 Applied Materials, Inc. Etch process for forming contacts over a silicide layer

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
abstract BONDUR J A ET AL: "GAS MIXING TO PREVENT *
BONAR J ET AL: "AEROSOL DOPED ND PLANAR SILICA WAVEGUIDE LASER" ELECTRONICS LETTERS,GB,IEE *
document. DATABASE INSPEC 'Online! INSTITUTE OF *
ELECTRICAL ENGINEERS, STEVENAGE, GB; Inspec No. AN5359690, DUTTA: "Prospects of vertical and smooth *
etching of thick silicon oxide for opto-electronics integration" XP002145015 abstract *
POLYMER FORMATION DURING REACTIVE ION ETCHING" IBM TECHNICALDISCLOSURE BULLETIN,US,IBM CORP.NEW YORK *
STEVENAGE, vol.31, no.2, 19 January 1995 (1995-01-19), pages99-100, xp000504787 issn: 0013-5194 *
vol.21, no.10, 1 March 1979 (1979-03-01), page 4016 XP002003416 ISSN: 0018-8689 the whole *

Also Published As

Publication number Publication date
EP1166341A1 (en) 2002-01-02
AU3568500A (en) 2000-10-16
GB0118719D0 (en) 2001-09-26
GB2348399A (en) 2000-10-04
WO2000059020A1 (en) 2000-10-05
GB2363361A (en) 2001-12-19
GB9907302D0 (en) 1999-05-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090330