AU3568500A - A reactive ion etching process - Google Patents

A reactive ion etching process

Info

Publication number
AU3568500A
AU3568500A AU35685/00A AU3568500A AU3568500A AU 3568500 A AU3568500 A AU 3568500A AU 35685/00 A AU35685/00 A AU 35685/00A AU 3568500 A AU3568500 A AU 3568500A AU 3568500 A AU3568500 A AU 3568500A
Authority
AU
Australia
Prior art keywords
etching process
reactive ion
ion etching
reactive
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU35685/00A
Inventor
James Stewart Aitchison
James Ronald Bonar
Paulo Vicente Da Silva Marques
Michael George Jubber
Andrew James Mclaughlin
Jesus Miguel Ruano-Lopez
Christopher D. W. Wilkinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Publication of AU3568500A publication Critical patent/AU3568500A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
AU35685/00A 1999-03-31 2000-03-30 A reactive ion etching process Abandoned AU3568500A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9907302 1999-03-31
GB9907302A GB2348399A (en) 1999-03-31 1999-03-31 Reactive ion etching with control of etch gas flow rate, pressure and rf power
PCT/GB2000/001231 WO2000059020A1 (en) 1999-03-31 2000-03-30 A reactive ion etching process

Publications (1)

Publication Number Publication Date
AU3568500A true AU3568500A (en) 2000-10-16

Family

ID=10850638

Family Applications (1)

Application Number Title Priority Date Filing Date
AU35685/00A Abandoned AU3568500A (en) 1999-03-31 2000-03-30 A reactive ion etching process

Country Status (4)

Country Link
EP (1) EP1166341A1 (en)
AU (1) AU3568500A (en)
GB (2) GB2348399A (en)
WO (1) WO2000059020A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
CN1244828C (en) * 2002-02-06 2006-03-08 松下电器产业株式会社 Optical waveguide manufacturing method
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992134A (en) * 1989-11-14 1991-02-12 Advanced Micro Devices, Inc. Dopant-independent polysilicon plasma etch
JP2830978B2 (en) * 1990-09-21 1998-12-02 忠弘 大見 Reactive ion etching apparatus and plasma processing apparatus
US5431772A (en) * 1991-05-09 1995-07-11 International Business Machines Corporation Selective silicon nitride plasma etching process
US5221425A (en) * 1991-08-21 1993-06-22 International Business Machines Corporation Method for reducing foreign matter on a wafer etched in a reactive ion etching process
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
JP2884970B2 (en) * 1992-11-18 1999-04-19 株式会社デンソー Dry etching method for semiconductor
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US5637190A (en) * 1995-09-15 1997-06-10 Vanguard International Semiconductor Corporation Plasma purge method for plasma process particle control
ATE251341T1 (en) * 1996-08-01 2003-10-15 Surface Technology Systems Plc METHOD FOR ETCHING SUBSTRATES
AUPO281896A0 (en) * 1996-10-04 1996-10-31 Unisearch Limited Reactive ion etching of silica structures for integrated optics applications

Also Published As

Publication number Publication date
GB9907302D0 (en) 1999-05-26
WO2000059020A1 (en) 2000-10-05
EP1166341A1 (en) 2002-01-02
GB2363361B (en) 2003-04-02
GB2363361A (en) 2001-12-19
GB0118719D0 (en) 2001-09-26
GB2348399A (en) 2000-10-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase