GB2358736B - GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure - Google Patents

GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure

Info

Publication number
GB2358736B
GB2358736B GB0022198A GB0022198A GB2358736B GB 2358736 B GB2358736 B GB 2358736B GB 0022198 A GB0022198 A GB 0022198A GB 0022198 A GB0022198 A GB 0022198A GB 2358736 B GB2358736 B GB 2358736B
Authority
GB
United Kingdom
Prior art keywords
fabrication method
fet transistor
epitaxial stacking
gainp epitaxial
gainp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0022198A
Other versions
GB2358736A (en
GB0022198D0 (en
Inventor
Takashi Udagawa
Masahiro Kimura
Akira Kasahara
Taichi Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP27435899A external-priority patent/JP3275894B2/en
Priority claimed from JP27871999A external-priority patent/JP3275895B2/en
Priority claimed from JP28623499A external-priority patent/JP3371868B2/en
Priority claimed from JP36863599A external-priority patent/JP2001185719A/en
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of GB0022198D0 publication Critical patent/GB0022198D0/en
Publication of GB2358736A publication Critical patent/GB2358736A/en
Application granted granted Critical
Publication of GB2358736B publication Critical patent/GB2358736B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
GB0022198A 1999-09-28 2000-09-11 GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure Expired - Fee Related GB2358736B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP27435899A JP3275894B2 (en) 1999-09-28 1999-09-28 Method for manufacturing GaInP-based laminated structure
JP27871999A JP3275895B2 (en) 1999-09-30 1999-09-30 Method for manufacturing GaInP-based laminated structure
JP28623499A JP3371868B2 (en) 1999-10-07 1999-10-07 GaInP-based laminated structure
JP36863599A JP2001185719A (en) 1999-12-27 1999-12-27 GaInP LAMINATED STRUCTURE AND FIELD EFFECT TRANSISTOR MANUFACTURED BY USING IT

Publications (3)

Publication Number Publication Date
GB0022198D0 GB0022198D0 (en) 2000-10-25
GB2358736A GB2358736A (en) 2001-08-01
GB2358736B true GB2358736B (en) 2004-06-23

Family

ID=27479023

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0022198A Expired - Fee Related GB2358736B (en) 1999-09-28 2000-09-11 GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure

Country Status (3)

Country Link
DE (1) DE10047659B4 (en)
GB (1) GB2358736B (en)
TW (1) TW522574B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408001A2 (en) * 1989-07-12 1991-01-16 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
JPH0645368A (en) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd Heterojunction semiconductor device
JPH06333832A (en) * 1993-05-20 1994-12-02 Fujitsu Ltd Manufacture of compound semiconductor film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817160B2 (en) * 1987-10-06 1996-02-21 昭和電工株式会社 Vapor growth method
DE69023956T2 (en) * 1989-06-16 1996-04-25 Toshiba Kawasaki Kk Method for producing a III-V compound semiconductor component.
DE4109723A1 (en) * 1991-03-25 1992-10-01 Merck Patent Gmbh METAL ORGANIC COMPOUNDS
WO1996000979A1 (en) * 1994-06-29 1996-01-11 British Telecommunications Public Limited Company Preparation of semiconductor substrates
JPH10247727A (en) * 1997-03-05 1998-09-14 Matsushita Electric Ind Co Ltd Field effect transistor
JPH10335350A (en) * 1997-06-03 1998-12-18 Oki Electric Ind Co Ltd Field-effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408001A2 (en) * 1989-07-12 1991-01-16 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
JPH0344038A (en) * 1989-07-12 1991-02-25 Fujitsu Ltd Semiconductor device
JPH0645368A (en) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd Heterojunction semiconductor device
JPH06333832A (en) * 1993-05-20 1994-12-02 Fujitsu Ltd Manufacture of compound semiconductor film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.Cryst.Gth., Vol 221, No 1-4, pp 713-716, Dec 2000, "Metal-organic VPE growth", M Kimura et al *

Also Published As

Publication number Publication date
DE10047659A1 (en) 2001-04-05
GB2358736A (en) 2001-08-01
TW522574B (en) 2003-03-01
GB0022198D0 (en) 2000-10-25
DE10047659B4 (en) 2007-12-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120911