AU2001276969A1 - Power mosfet and method for forming same using a self-aligned body implant - Google Patents
Power mosfet and method for forming same using a self-aligned body implantInfo
- Publication number
- AU2001276969A1 AU2001276969A1 AU2001276969A AU7696901A AU2001276969A1 AU 2001276969 A1 AU2001276969 A1 AU 2001276969A1 AU 2001276969 A AU2001276969 A AU 2001276969A AU 7696901 A AU7696901 A AU 7696901A AU 2001276969 A1 AU2001276969 A1 AU 2001276969A1
- Authority
- AU
- Australia
- Prior art keywords
- self
- power mosfet
- forming same
- body implant
- aligned body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000007943 implant Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21985800P | 2000-07-20 | 2000-07-20 | |
US60219858 | 2000-07-20 | ||
US09/844,347 US6921939B2 (en) | 2000-07-20 | 2001-04-27 | Power MOSFET and method for forming same using a self-aligned body implant |
US09844347 | 2001-04-27 | ||
PCT/US2001/022575 WO2002009177A2 (en) | 2000-07-20 | 2001-07-18 | Power mosfet and method for forming same using a self-aligned body implant |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001276969A1 true AU2001276969A1 (en) | 2002-02-05 |
Family
ID=26914325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001276969A Abandoned AU2001276969A1 (en) | 2000-07-20 | 2001-07-18 | Power mosfet and method for forming same using a self-aligned body implant |
Country Status (7)
Country | Link |
---|---|
US (2) | US6921939B2 (en) |
JP (1) | JP3954493B2 (en) |
CN (1) | CN1211844C (en) |
AU (1) | AU2001276969A1 (en) |
DE (1) | DE10196441B4 (en) |
TW (1) | TW498429B (en) |
WO (1) | WO2002009177A2 (en) |
Families Citing this family (39)
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US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
FI120310B (en) * | 2001-02-13 | 2009-09-15 | Valtion Teknillinen | An improved method for producing secreted proteins in fungi |
KR100859701B1 (en) * | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | High voltage LDMOS transistor and method for fabricating the same |
US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7638841B2 (en) * | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7368777B2 (en) * | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7081388B2 (en) * | 2004-03-01 | 2006-07-25 | International Rectifier Corporation | Self aligned contact structure for trench device |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
DE102004057237B4 (en) * | 2004-11-26 | 2007-02-08 | Infineon Technologies Ag | Method for producing contact holes in a semiconductor body and transistor with a vertical structure |
JP2006202931A (en) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
US7395405B2 (en) * | 2005-01-28 | 2008-07-01 | Intel Corporation | Method and apparatus for supporting address translation in a virtual machine environment |
KR101236030B1 (en) | 2005-04-06 | 2013-02-21 | 페어차일드 세미컨덕터 코포레이션 | Trenched-gate field effect transistors and methods of forming the same |
CN101536163B (en) | 2005-06-10 | 2013-03-06 | 飞兆半导体公司 | Charge balance field effect transistor |
US7385248B2 (en) * | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
DE102005055838B4 (en) * | 2005-11-23 | 2007-10-04 | Infineon Technologies Ag | Method and device for enabling deep-lying semiconductor contacts |
US7667265B2 (en) * | 2006-01-30 | 2010-02-23 | Fairchild Semiconductor Corporation | Varying mesa dimensions in high cell density trench MOSFET |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
DE102006029750B4 (en) * | 2006-06-28 | 2010-12-02 | Infineon Technologies Austria Ag | Trench transistor and method of manufacture |
DE102006049354B3 (en) * | 2006-10-19 | 2008-06-05 | Infineon Technologies Ag | Method for producing a connection contact on a semiconductor body |
US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
US7772668B2 (en) * | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US7910439B2 (en) * | 2008-06-11 | 2011-03-22 | Maxpower Semiconductor Inc. | Super self-aligned trench MOSFET devices, methods, and systems |
WO2010008617A1 (en) * | 2008-07-15 | 2010-01-21 | Maxpower Semiconductor Inc. | Mosfet switch with embedded electrostatic charge |
TWI380448B (en) * | 2009-09-16 | 2012-12-21 | Anpec Electronics Corp | Overlapping trench gate semiconductor device and manufacturing method thereof |
JP2011134985A (en) * | 2009-12-25 | 2011-07-07 | Fuji Electric Co Ltd | Trench gate type semiconductor device, and method of manufacturing the same |
US8432000B2 (en) | 2010-06-18 | 2013-04-30 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
JP5562917B2 (en) | 2011-09-16 | 2014-07-30 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US9082746B2 (en) * | 2012-01-16 | 2015-07-14 | Infineon Technologies Austria Ag | Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component |
JP6170812B2 (en) | 2013-03-19 | 2017-07-26 | 株式会社東芝 | Manufacturing method of semiconductor device |
CN105097543A (en) * | 2014-05-23 | 2015-11-25 | 北大方正集团有限公司 | Groove-shaped VDMOS device and manufacturing method therefor |
JP2016058679A (en) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | Semiconductor device and method of manufacturing the same |
DE102014115321B4 (en) * | 2014-10-21 | 2018-03-29 | Infineon Technologies Austria Ag | Semiconductor device and method for manufacturing a semiconductor device by means of an alignment layer |
CN104576743B (en) * | 2015-01-28 | 2017-10-20 | 无锡新洁能股份有限公司 | Power MOS (Metal Oxide Semiconductor) device with groove and its manufacture method |
CN106898549A (en) * | 2015-12-21 | 2017-06-27 | 株洲南车时代电气股份有限公司 | Trench gate IGBT and trench gate IGBT preparation methods |
JP6784164B2 (en) * | 2016-12-15 | 2020-11-11 | 株式会社豊田中央研究所 | Semiconductor device |
CN110047759A (en) * | 2019-04-28 | 2019-07-23 | 矽力杰半导体技术(杭州)有限公司 | Trench MOSFET device manufacturing method |
CN112447844A (en) * | 2019-09-03 | 2021-03-05 | 南通尚阳通集成电路有限公司 | Method for manufacturing semiconductor device |
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JP3773755B2 (en) * | 2000-06-02 | 2006-05-10 | セイコーインスツル株式会社 | Vertical MOS transistor and manufacturing method thereof |
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-
2001
- 2001-04-27 US US09/844,347 patent/US6921939B2/en not_active Expired - Lifetime
- 2001-07-18 DE DE10196441T patent/DE10196441B4/en not_active Expired - Lifetime
- 2001-07-18 WO PCT/US2001/022575 patent/WO2002009177A2/en active Application Filing
- 2001-07-18 JP JP2002514783A patent/JP3954493B2/en not_active Expired - Fee Related
- 2001-07-18 AU AU2001276969A patent/AU2001276969A1/en not_active Abandoned
- 2001-07-18 CN CNB018143776A patent/CN1211844C/en not_active Expired - Lifetime
- 2001-07-20 TW TW090117818A patent/TW498429B/en not_active IP Right Cessation
-
2005
- 2005-04-12 US US11/104,164 patent/US7501323B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1211844C (en) | 2005-07-20 |
WO2002009177A3 (en) | 2002-06-13 |
US6921939B2 (en) | 2005-07-26 |
DE10196441B4 (en) | 2009-10-22 |
DE10196441T1 (en) | 2003-07-17 |
WO2002009177A2 (en) | 2002-01-31 |
US20050184318A1 (en) | 2005-08-25 |
US7501323B2 (en) | 2009-03-10 |
JP2004515907A (en) | 2004-05-27 |
JP3954493B2 (en) | 2007-08-08 |
CN1447982A (en) | 2003-10-08 |
TW498429B (en) | 2002-08-11 |
US20020008284A1 (en) | 2002-01-24 |
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