GB2326025A - Method of forming a field oxide film in a semiconductor device - Google Patents

Method of forming a field oxide film in a semiconductor device Download PDF

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Publication number
GB2326025A
GB2326025A GB9818286A GB9818286A GB2326025A GB 2326025 A GB2326025 A GB 2326025A GB 9818286 A GB9818286 A GB 9818286A GB 9818286 A GB9818286 A GB 9818286A GB 2326025 A GB2326025 A GB 2326025A
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GB
United Kingdom
Prior art keywords
oxide film
forming
thermal oxide
silicon substrate
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9818286A
Other versions
GB9818286D0 (en
GB2326025B (en
Inventor
Sang Hoon Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019940016088A external-priority patent/KR0125312B1/en
Priority claimed from KR1019940016110A external-priority patent/KR100187676B1/en
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Priority claimed from GB9513227A external-priority patent/GB2291261B/en
Publication of GB9818286D0 publication Critical patent/GB9818286D0/en
Publication of GB2326025A publication Critical patent/GB2326025A/en
Application granted granted Critical
Publication of GB2326025B publication Critical patent/GB2326025B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

A first thermal oxide and photoresist is formed upon the silicon substrate 13 and then the Si substrate is etched to form a protruding portion. After removing the photoresist and the first thermal oxide a second thermal oxide 70 and a first nitride 80 film are formed. A portion of the first nitride film 80 is then removed, a channel stopper 90 is implanted and nitride sidewall spacers 100 are formed. A trench 110 is the etched into the protruding portion of the Si substrate, preferably the trench is less deep than the protruding portion. The field oxide 120 is formed by a thermal oxidation process. A wet etch may then be performed to remove the nitride spacers 100, the first nitride film 80 and the second thermal oxide film 70.

Description

METHOD OF FORbIING A FIELD OXIDE FILM IN A SEMICONDUCTOR DEVICE BACKGROUND OF INVENTION Field of the Invention The present invention relates to a method of forming a field oxide film in a semiconcucror device, and particularly, to a method of forming a field oxide film of semiconductor device which can increase an active region by removing a bird's beak produced by a selective tr.ertnal oxidization process.
Information Disclosure St~.ement In general, a field oxide film is formed to isolate semiconductor devices frcm each other. A prior art method of forming a field oxide film is described below with reference to FIG. 1.
A field oxide film 4 composed of a thermal oxide film is formed by sequentially forming a pad oxide film 2 and a nitride film 3 on a silicon substrate 1, thereafter etching a se~ectea part of the pad oxide film 2 and che nitride film 3, and thereafter performing a thermal oxidization process. The prior art technology has a disadvantage in that the active region is decreased by the occurence of a bird's beak 8At as the thermal oxide film penetrates below the nitride film 3.
SUMMAPsY OF THE INVENTION According to the present invention, a method of forming a field oxide film in a semiconductor device comprises the steps of: forming a first thermal oxide film on a silicon substrate; forming a photoresist pattern thereon; removing a portion of exposed first thermal oxide film and silicon substrate thereby forming a projecting portion; sequentially removing the photoresist pattern and first thermal oxide film; sequentially forming a second thermal oxide film, and a first nitride film; exposing the second thermal oxide film by removing a portion of the first nitride film; forming a channel stopper on the silicon substrate; forming a trench by forming a nitride spacer on a side wall of the first nitride film, and by removing a portion of the second thermal oxide film and silicon substrate; forming a field oxide film by a thermal oxidation process; and etching the nitride spacer, first nitride film and second thermal oxide film.
Such a method of forming a field oxide film in a semiconductor device can improve the topology between the field oxide film and the silicon substrate by minimising the bird's beak at the time of forming the field oxide film.
To better understand the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a sectional view of a semiconductor device illustrating a prior art method of forming a field oxide film; and FIGS. 2A through 2F are sectional views of a semiconductor device illustrating a method of forming a field oxide film according to the present invention Referring to FIG. 2A, a first thermal oxide film 53 is formed with the thickness of 100 to 300A on the silicon substrate 13, and thereafter, a photoresist pattern 60 is formed thereon.
Then the first thermal oxide film 50 and silicon substrate 13 exposed by the photoresist pattern 60 are etched to a predetermined depth by an anisotropic etching process, thereby forming a projecting part.
FIG. 2B is a sectional view showing the semiconductor device following removal of the photoresist pattern 60 and the first thermal oxide film 50, with a second thermal oxide film 70 and a first nitride film 80 having been sequentially formed with a predetermined thickness.
Referring to FIG. 2C, a portion of the first nitride film 80 is removed by photolithography, thereby exposing a portion of the second thermal oxide film 70.
Thereafter, a channel stopper 90 is formed by implanting impurity ions on the silicon substrate 13. The impurity ions forming the channel stopper are preferably on the projecting portion of the silicon substrate 13.
Next, a second nitride film is deposited and a nitride film spacer 100 is formed on a side wall of the first nitride film 80 by anisotropically etching the second nitride film.
The second thermal oxide film 70 and the silicon substrate 13 thus exposed are etched, with the first nitride film 80 and the nitride spacer 100 acting as an etching stop layer, to form a trench of desired depth, as shown in FIG. 2D.
The depth of the trench 110 is preferably smaller than the height of the projecting portion of the silicon substrate 13.
FIG. 2E is a sectional view showing a field oxide film 120, formed without a bird's beak by performing a thermal oxidation process on the semiconductor device shown in FIG. 2D.
FIG. 2F is a sectional view showing a complete field oxide film 130, formed by removing the nitride spacer 100, the first nitride film 80 and the second thermal oxide film 70 by a wet etching process, to expose the silicon substrate.
As described above, the present invention has an excellent effect, in that the electrical characteristics and reliability of a semiconductor device can be improved by increasing the active region, by minimising a bird's beak at the time of forming a field oxide film.
Although the invention has been described in its preferred form with a certain degree of particularity, it is appreciated by those skilled in the art that the present disclosure of the preferred form has been made only as an example, and that numerous changes in the details of the construction, combination and arrangement of parts may be resorted to without departing from the scope of the invention as defined in the claims.

Claims (7)

Claims
1.
A method of forming a field oxide film in a semiconductor device comprising the steps of: forming a first thermal oxide film (50) on a silicon substrate (13); forming a photoresist pattern (60) thereon; removing a portion of exposed first thermal oxide film and silicon substrate thereby forming a projecting portion; sequentially removing the photoresist pattern and first thermal oxide film; sequentially forming a second thermal oxide film (70), and a first nitride film (80); exposing the second thermal oxide film by removing a portion of the first nitride film; forming a channel stopper (90) on the silicon substrate; forming a trench (110) by forming a nitride spacer (100) on a side wall of the first nitride film, and by removing a portion of the second thermal oxide film and silicon substrate; forming a field oxide film (120) by a thermal oxidation process; and etching the nitride spacer, first nitride film and second thermal oxide film.
2.
The method as claimed in Claim 1, wherein the first thermal oxide film and the silicon substrate exposed by the photoresist pattern are etched to a predetermined depth by an anisotropic etching process.
3.
The method as claimed in either of the preceding claims, wherein the portion of the first nitride film is removed by a photolithographic etching process.
4.
The method as claimed in any of the preceding claims, wherein the channel stopper is formed by implanting impurity ions, in the projecting portion of the silicon substrate.
5.
The method as claimed in any of the preceding claims, wherein the depth of the trench is smaller than the height of the projecting portion of the silicon substrate.
6.
The method as claimed in any of the preceding claims, wherein the nitride film spacer, first nitride film and second thermal oxide film are removed by a wet etching process.
7.
A method of forming a field oxide film in a semiconductor device substantially as hereinbefore described, with reference to, and as shown in, the accompanying drawings.
GB9818286A 1994-07-06 1995-06-29 Method of forming a field oxide film in a semicondutor device Expired - Fee Related GB2326025B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019940016088A KR0125312B1 (en) 1994-07-06 1994-07-06 Field oxidation method of semiconductor device
KR1019940016110A KR100187676B1 (en) 1994-07-06 1994-07-06 Method of forming field oxide film in a semiconductor device
GB9513227A GB2291261B (en) 1994-07-06 1995-06-29 Method of forming a field oxide film in a semiconductor device

Publications (3)

Publication Number Publication Date
GB9818286D0 GB9818286D0 (en) 1998-10-14
GB2326025A true GB2326025A (en) 1998-12-09
GB2326025B GB2326025B (en) 1999-03-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB9818286A Expired - Fee Related GB2326025B (en) 1994-07-06 1995-06-29 Method of forming a field oxide film in a semicondutor device

Country Status (1)

Country Link
GB (1) GB2326025B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6772125B2 (en) 2000-04-05 2004-08-03 Sony United Kingdom Limited Audio/video reproducing apparatus and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
US5252511A (en) * 1991-03-04 1993-10-12 Samsung Electronics Co., Ltd. Isolation method in a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
US5252511A (en) * 1991-03-04 1993-10-12 Samsung Electronics Co., Ltd. Isolation method in a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6772125B2 (en) 2000-04-05 2004-08-03 Sony United Kingdom Limited Audio/video reproducing apparatus and method
USRE41939E1 (en) 2000-04-05 2010-11-16 Sony United Kingdom Limited Audio/video reproducing apparatus and method

Also Published As

Publication number Publication date
GB9818286D0 (en) 1998-10-14
GB2326025B (en) 1999-03-24

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20070629