GB2308233B - Gate electrode and method for the formation thereof - Google Patents

Gate electrode and method for the formation thereof

Info

Publication number
GB2308233B
GB2308233B GB9626113A GB9626113A GB2308233B GB 2308233 B GB2308233 B GB 2308233B GB 9626113 A GB9626113 A GB 9626113A GB 9626113 A GB9626113 A GB 9626113A GB 2308233 B GB2308233 B GB 2308233B
Authority
GB
United Kingdom
Prior art keywords
formation
gate electrode
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9626113A
Other versions
GB9626113D0 (en
GB2308233A (en
Inventor
Jae-Sung Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9626113D0 publication Critical patent/GB9626113D0/en
Publication of GB2308233A publication Critical patent/GB2308233A/en
Application granted granted Critical
Publication of GB2308233B publication Critical patent/GB2308233B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9626113A 1995-12-15 1996-12-16 Gate electrode and method for the formation thereof Expired - Fee Related GB2308233B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050441A KR100203896B1 (en) 1995-12-15 1995-12-15 Manufacturing method of the gate electrode

Publications (3)

Publication Number Publication Date
GB9626113D0 GB9626113D0 (en) 1997-02-05
GB2308233A GB2308233A (en) 1997-06-18
GB2308233B true GB2308233B (en) 2000-11-15

Family

ID=19440439

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9626113A Expired - Fee Related GB2308233B (en) 1995-12-15 1996-12-16 Gate electrode and method for the formation thereof

Country Status (5)

Country Link
JP (1) JPH1032334A (en)
KR (1) KR100203896B1 (en)
CN (1) CN1172378C (en)
DE (1) DE19652070C2 (en)
GB (1) GB2308233B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9802940D0 (en) * 1998-02-11 1998-04-08 Cbl Ceramics Ltd Gas sensor
KR100710645B1 (en) * 2001-05-18 2007-04-24 매그나칩 반도체 유한회사 Method for forming the metal line in semiconductor device
CN101572228B (en) * 2008-04-28 2011-03-23 中芯国际集成电路制造(北京)有限公司 Methods for forming polysilicon thin film and gate
US10916505B2 (en) * 2018-08-11 2021-02-09 Applied Materials, Inc. Graphene diffusion barrier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459770A2 (en) * 1990-05-31 1991-12-04 Canon Kabushiki Kaisha Method for producing a semiconductor device with gate structure
US5302538A (en) * 1992-08-04 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing field effect transistor
US5432126A (en) * 1993-09-07 1995-07-11 Nec Corporation Fabrication process of compound semiconductor device comprising L-shaped gate electrode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364803A (en) * 1993-06-24 1994-11-15 United Microelectronics Corporation Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure
US5441904A (en) * 1993-11-16 1995-08-15 Hyundai Electronics Industries, Co., Ltd. Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459770A2 (en) * 1990-05-31 1991-12-04 Canon Kabushiki Kaisha Method for producing a semiconductor device with gate structure
US5302538A (en) * 1992-08-04 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing field effect transistor
US5432126A (en) * 1993-09-07 1995-07-11 Nec Corporation Fabrication process of compound semiconductor device comprising L-shaped gate electrode

Also Published As

Publication number Publication date
DE19652070C2 (en) 2003-02-20
CN1172378C (en) 2004-10-20
GB9626113D0 (en) 1997-02-05
KR100203896B1 (en) 1999-06-15
CN1155159A (en) 1997-07-23
JPH1032334A (en) 1998-02-03
DE19652070A1 (en) 1997-06-19
GB2308233A (en) 1997-06-18
KR970053905A (en) 1997-07-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091216