GB2308233B - Gate electrode and method for the formation thereof - Google Patents
Gate electrode and method for the formation thereofInfo
- Publication number
- GB2308233B GB2308233B GB9626113A GB9626113A GB2308233B GB 2308233 B GB2308233 B GB 2308233B GB 9626113 A GB9626113 A GB 9626113A GB 9626113 A GB9626113 A GB 9626113A GB 2308233 B GB2308233 B GB 2308233B
- Authority
- GB
- United Kingdom
- Prior art keywords
- formation
- gate electrode
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050441A KR100203896B1 (en) | 1995-12-15 | 1995-12-15 | Manufacturing method of the gate electrode |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9626113D0 GB9626113D0 (en) | 1997-02-05 |
GB2308233A GB2308233A (en) | 1997-06-18 |
GB2308233B true GB2308233B (en) | 2000-11-15 |
Family
ID=19440439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9626113A Expired - Fee Related GB2308233B (en) | 1995-12-15 | 1996-12-16 | Gate electrode and method for the formation thereof |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH1032334A (en) |
KR (1) | KR100203896B1 (en) |
CN (1) | CN1172378C (en) |
DE (1) | DE19652070C2 (en) |
GB (1) | GB2308233B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9802940D0 (en) * | 1998-02-11 | 1998-04-08 | Cbl Ceramics Ltd | Gas sensor |
KR100710645B1 (en) * | 2001-05-18 | 2007-04-24 | 매그나칩 반도체 유한회사 | Method for forming the metal line in semiconductor device |
CN101572228B (en) * | 2008-04-28 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | Methods for forming polysilicon thin film and gate |
US10916505B2 (en) * | 2018-08-11 | 2021-02-09 | Applied Materials, Inc. | Graphene diffusion barrier |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0459770A2 (en) * | 1990-05-31 | 1991-12-04 | Canon Kabushiki Kaisha | Method for producing a semiconductor device with gate structure |
US5302538A (en) * | 1992-08-04 | 1994-04-12 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing field effect transistor |
US5432126A (en) * | 1993-09-07 | 1995-07-11 | Nec Corporation | Fabrication process of compound semiconductor device comprising L-shaped gate electrode |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
US5441904A (en) * | 1993-11-16 | 1995-08-15 | Hyundai Electronics Industries, Co., Ltd. | Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries |
-
1995
- 1995-12-15 KR KR1019950050441A patent/KR100203896B1/en not_active IP Right Cessation
-
1996
- 1996-12-13 DE DE19652070A patent/DE19652070C2/en not_active Expired - Fee Related
- 1996-12-15 CN CNB961214740A patent/CN1172378C/en not_active Expired - Fee Related
- 1996-12-16 GB GB9626113A patent/GB2308233B/en not_active Expired - Fee Related
- 1996-12-16 JP JP8352537A patent/JPH1032334A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0459770A2 (en) * | 1990-05-31 | 1991-12-04 | Canon Kabushiki Kaisha | Method for producing a semiconductor device with gate structure |
US5302538A (en) * | 1992-08-04 | 1994-04-12 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing field effect transistor |
US5432126A (en) * | 1993-09-07 | 1995-07-11 | Nec Corporation | Fabrication process of compound semiconductor device comprising L-shaped gate electrode |
Also Published As
Publication number | Publication date |
---|---|
DE19652070C2 (en) | 2003-02-20 |
CN1172378C (en) | 2004-10-20 |
GB9626113D0 (en) | 1997-02-05 |
KR100203896B1 (en) | 1999-06-15 |
CN1155159A (en) | 1997-07-23 |
JPH1032334A (en) | 1998-02-03 |
DE19652070A1 (en) | 1997-06-19 |
GB2308233A (en) | 1997-06-18 |
KR970053905A (en) | 1997-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20091216 |