KR0149188B1 - Transistor and the manufacturing method thereof - Google Patents

Transistor and the manufacturing method thereof

Info

Publication number
KR0149188B1
KR0149188B1 KR94013448A KR19940013448A KR0149188B1 KR 0149188 B1 KR0149188 B1 KR 0149188B1 KR 94013448 A KR94013448 A KR 94013448A KR 19940013448 A KR19940013448 A KR 19940013448A KR 0149188 B1 KR0149188 B1 KR 0149188B1
Authority
KR
South Korea
Prior art keywords
transistor
manufacturing
Prior art date
Application number
KR94013448A
Other languages
Korean (ko)
Other versions
KR960002793A (en
Inventor
Hyun-Sang Hwang
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR94013448A priority Critical patent/KR0149188B1/en
Publication of KR960002793A publication Critical patent/KR960002793A/en
Application granted granted Critical
Publication of KR0149188B1 publication Critical patent/KR0149188B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR94013448A 1994-06-15 1994-06-15 Transistor and the manufacturing method thereof KR0149188B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94013448A KR0149188B1 (en) 1994-06-15 1994-06-15 Transistor and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94013448A KR0149188B1 (en) 1994-06-15 1994-06-15 Transistor and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR960002793A KR960002793A (en) 1996-01-26
KR0149188B1 true KR0149188B1 (en) 1998-10-15

Family

ID=19385306

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94013448A KR0149188B1 (en) 1994-06-15 1994-06-15 Transistor and the manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR0149188B1 (en)

Also Published As

Publication number Publication date
KR960002793A (en) 1996-01-26

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050524

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee