GB2262746A - Gold wire - Google Patents

Gold wire Download PDF

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Publication number
GB2262746A
GB2262746A GB9301997A GB9301997A GB2262746A GB 2262746 A GB2262746 A GB 2262746A GB 9301997 A GB9301997 A GB 9301997A GB 9301997 A GB9301997 A GB 9301997A GB 2262746 A GB2262746 A GB 2262746A
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United Kingdom
Prior art keywords
ppm
bonding
gold wire
wire
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9301997A
Other versions
GB9301997D0 (en
GB2262746B (en
Inventor
Takeshi Kujiraoka
Koichiro Mukoyama
Hiromi Yamamoto
Kenichi Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1109450A external-priority patent/JP2680416B2/en
Priority claimed from JP1109447A external-priority patent/JP2680413B2/en
Priority claimed from JP1109448A external-priority patent/JP2680414B2/en
Priority claimed from JP1109449A external-priority patent/JP2680415B2/en
Priority claimed from GB8924398A external-priority patent/GB2231336B/en
Priority to GB9301997A priority Critical patent/GB2262746B/en
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Publication of GB9301997D0 publication Critical patent/GB9301997D0/en
Publication of GB2262746A publication Critical patent/GB2262746A/en
Application granted granted Critical
Publication of GB2262746B publication Critical patent/GB2262746B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

A gold wire for use in the wire bonding of a semiconductor device comprising the elements La 30-200, Be 1-20, Ca 1-20, Pt group metal(s) 1-60, all the figures being in ppm by weight, the balance being Au of high purity.

Description

GOLD WIRE FOR THE BONDING OF A SEMICONDUCTOR DEVICE Background of the Invention (Field of the Invention) The present invention concerns a gold wire for wire bonding used for connecting chip electrodes and external leads of a semiconductor.
(Description of the Prior Art) For improving mechanical property and bonding property of gold wires for bonding, various kind of elements have been incorporated into Au at high purity of 99.99% or higher.
For instance, there have been known those bonding wires prepared by incorporating La, Pb, Be and Ca to Au at high purity (Japanese Patent Laid-Open Sho 62-228440), or a predetermined amount of La and Be to Au at to high purity (Japanese Patent Laid-Open Sho 60-30158) and they have respective usefulness under certain conditions.
However, as the multi-pin arrangement has been adopted more and more in LSI packages in recent years, it has been required that wire loops in the form of bonding have greater length and height of loops as compared with conventional loops.
That is, it has been required that a loop height can be maintained without causing sag of the loop and that even a long loop has a property of not causing wire bending, that is, high tensile strength at a ball neck portion (neck strength), large loop height and less wire bending.
In the conventional gold wires, however, the foregoing requirements can not be satisfied completely regarding the kind of the additive elements and the range of the content thereof and, accordingly, no improvement can be expected for the reliability of semiconductor devices.
Summary of the Invention In view of the foregoing situations in the prior art, the object of the present invention is to provide a gold wire for bonding capable of satisfying the requirement for long and high loop and capable of ensuring high reliability of semiconductor devices.
The foregoing object can be attained by a gold wire for bonding of the present invention.
A gold wire for bonding according to the present invention comprises 30 to 200 wt ppm of La, 1 to 20 wt ppm of Be, 1 to 20 wt ppm of Ca, 1-60 wt ppm of one or more of platinum group elements and the balance of Au at high purity.
In the above , the Au used as starting material has a purity of 99.99% or more including inevitable impurity.
As stated above, the gold wire for bonding of the invention herein comprises 30 to 200 wt ppm of La, 1 to 20 wt ppm of Be, 1 to 20 wt ppm of Ca, 1-60 wt ppm of one or more of platinum group elements and the balance of Au at high purity, wherein La, Be, Ca and the platinum group elements have the following functions La has a function of increasing tensile strength of the gold wire at high temperature (high temperature strength), promoting refining of crystal grains upon forming a ball, suppressing wire bending in a long loop and suppressing wire flow upon resin molding. If the content is less than 30 wt ppm, the foregoing functions can not be satisfied.
On the contrary, if the La content exceeds 200 wt ppm, joining strength after bonding is reduced, as well as the ball hardness is increased to cause chip cracking upon bonding.
Be has a function of increasing tensile strength of the gold wire under normal temperature, as well as refining the crystal grain size upon ball-formation of the gold wire and suppressing wire bending in a long loop like that for La. If the content is less than 1 wt ppm, no desired function can be obtained.
On the other hand, if the Be content exceeds 20 wt ppm, joining strength is reduced, as well as neck disconnection or chip cracking is caused upon bonding.
Ca has a function of particularly improving high temperature strength of the gold wire, increasing tensile strength at normal temperature, suppressing aging change, as well as promoting refining of crystal grains upon ball formation and suppressing wire flow upon resin molding. If the content is less than 1 wt ppm, the foregoing functions can not be obtained.
On the contrary, if the Ca content exceeds 20 wt ppm, joining strength is reduced, as well as neck disconnection or chip cracking is caused and abnormality in the shape of loop such as sagging may be caused frequently.
The platinum group elements comprise Pt, Ir, Pd, Rh, etc. and they have a function, in cooperation with La, Be and Ca, of suppressing wire bonding, particularly, in a long loop. If the content is less than 1 wt ppm, the functions can not be satified. On the other hand, if it exceeds 60 wt ppm, joining strength is reduced, as well as neck disconnection or chip cracking is caused.
Explanation will be made for the examples of the invention.
Each of the specimens was prepared by melting and casting high purity Au (99.999%) with addition of La, Be, Ca and one or more of Pt and Pd among the platinum group elements, applying fabrication with grooved roll, in which annealing was applied in the course of the fabrication, and then applying wire drawing to form an extremely fine gold wire of 25mt.
The contents of elements in each of the specimens are as shown in Table 1. Specimens Nos. 1 - 7 are examples of the present invention, while specimens Nos. 8 - 12 are comparative examples out of the range of the composition according to the present invention.
Results for the measurement of mechanical properties and bonding properties for the above mentioned specimens are shown in Table 2.
According to the invention herein, the crystal grain size in the neck ball portion upon bonding is refined to improve the neck strength, as well as mechanical strength is improved and the bonding properties can be improved even in a loop form of large loop height and large loop length and it is possible to provide a semi-conductor device of high reliability along with the tendancy of employing multi-pin arrangement.
Table (1)
sPec1e Additive element (vt ;pi) aa Flu PltinulD group decent La. So Ca 1 Put=60 30 1 1 2 a Pt:30 100 10 - 10 3 a Pt :1 1jut0 10 10 4 u Pt:6O 200 20 20 E 5 N Pt:3o Rd: 30 100 10 10 6 ii P: I 1 20 n Pd=l 150 20 20 10 7 N Pd: GO 200 10 8 ii --------- 200 20 20 9 N Pt 70 100 10 10 , 10 a Pt: GO 210 25 25 o u 11 a Pt: 6D - - 30 C E t 12 ii 30 10 7 30 Table 2
Specimen ~Mechanical property., Bonding test.
@ornal High temperature Tensile Neck Loop wire bend.
temperature . (250 C. 20S) Ball shape Strength strength height NO. B.L (g) EQ (%) B.L(g). EQ (%) . (g) (g) ( m) (%) 1 11.0 4.0 8.0 2.5 excellent 7.3 7.8 220 2.2 2 12.5 " 8.5 2.2 " 8.2 9.3 217 2.3 3 12.7 " 8.8 1.8 " 8.5 9.5 200 2.5 4 13.9 " 9.7 2.5 " 9.6 11.1 237 2.0 5 13.2 " 8.4 2.3 " 9.3 10.0 225 1.9 6 13.0 " 8.8 1.9 " 9.0 9.9 201 2.5 7 13.4 " 9.2 2.5 " 9.3 10.5 230 2.2 8 13.5 " 10.8 1.5 " 10.2 10.7 189 3.4 9 13.3 " 9.0 2.9 " 9.2 10.1 196 4.7 10 15.0 " 11.7 2.0 poor 11.0 12.0 195 6.3 11 9.6 " 7.3 2.7 excellent 6.0 6.7 207 3.0 12 11.4 " 8.2 1.6 " 7.9 8.7 174 3.8

Claims (2)

  1. WHAT IS CLAIMED IS 1. A gold wire used for the bonding of a semiconductor device, comprising 30 to 200 wt ppm of La, 1 to 20 wt ppm of Be, 1 to 20 wt ppm of Ca, 1 to 60 wt ppm of one or more of platinum group element and the balance of Au at high purity.
  2. 2. A gold wire used for bonding as defined in claim 1, wherein the platinum group element comprises one or more of Pt and Pd.
GB9301997A 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device Expired - Fee Related GB2262746B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9301997A GB2262746B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1109447A JP2680413B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements
JP1109448A JP2680414B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements
JP1109449A JP2680415B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements
JP1109450A JP2680416B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements
GB8924398A GB2231336B (en) 1989-04-28 1989-10-30 Gold wire for the bonding of a semiconductor device
GB9301997A GB2262746B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device

Publications (3)

Publication Number Publication Date
GB9301997D0 GB9301997D0 (en) 1993-03-17
GB2262746A true GB2262746A (en) 1993-06-30
GB2262746B GB2262746B (en) 1993-09-22

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GB9301997A Expired - Fee Related GB2262746B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743679A2 (en) * 1995-05-17 1996-11-20 Tanaka Denshi Kogyo Kabushiki Kaisha Gold wire for chip bonding
EP0882805A1 (en) * 1993-09-06 1998-12-09 Mitsubishi Materials Corporation Gold based material for ornamental purposes, hardened by alloying with minor components

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0882805A1 (en) * 1993-09-06 1998-12-09 Mitsubishi Materials Corporation Gold based material for ornamental purposes, hardened by alloying with minor components
EP0743679A2 (en) * 1995-05-17 1996-11-20 Tanaka Denshi Kogyo Kabushiki Kaisha Gold wire for chip bonding
EP0743679A3 (en) * 1995-05-17 1997-02-26 Tanaka Electronics Ind Gold wire for chip bonding
US5702814A (en) * 1995-05-17 1997-12-30 Tanaka Denshi Kogyo Kabushiki Kaisha Gold wire for bonding

Also Published As

Publication number Publication date
GB9301997D0 (en) 1993-03-17
GB2262746B (en) 1993-09-22

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20051030