JP2680415B2 - Gold wire for bonding semiconductor elements - Google Patents

Gold wire for bonding semiconductor elements

Info

Publication number
JP2680415B2
JP2680415B2 JP1109449A JP10944989A JP2680415B2 JP 2680415 B2 JP2680415 B2 JP 2680415B2 JP 1109449 A JP1109449 A JP 1109449A JP 10944989 A JP10944989 A JP 10944989A JP 2680415 B2 JP2680415 B2 JP 2680415B2
Authority
JP
Japan
Prior art keywords
gold wire
bonding
ppm
wire
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1109449A
Other languages
Japanese (ja)
Other versions
JPH02288348A (en
Inventor
毅 鯨岡
健一 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP1109449A priority Critical patent/JP2680415B2/en
Priority to GB8924398A priority patent/GB2231336B/en
Priority to KR1019890015637A priority patent/KR920010119B1/en
Priority to DE3936281A priority patent/DE3936281A1/en
Priority to US07/429,485 priority patent/US4938923A/en
Publication of JPH02288348A publication Critical patent/JPH02288348A/en
Priority to GB9301997A priority patent/GB2262746B/en
Priority to GB9301998A priority patent/GB2262944B/en
Priority to GB9301999A priority patent/GB2262747B/en
Application granted granted Critical
Publication of JP2680415B2 publication Critical patent/JP2680415B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体のチップ電極と外部リードとを接続す
るために用いられるワイヤボンディング用金線に関す
る。The present invention relates to a wire bonding gold wire used for connecting a semiconductor chip electrode and an external lead.

（従来技術とその技術的課題） 従来、ボンディング用金線において、その機械的特性
およびボンディング特性を改善するために、高純度（9
9.99％以上）のAuに各種の元素を含有せしめることが行
なわれてきた。(Prior art and its technical problem) Conventionally, in order to improve the mechanical characteristics and bonding characteristics of the gold wire for bonding, high purity (9
9.99% or more) has been made to contain various elements.

例えば高純度AuにLa,Pb,Be,Caを所定量含有させ（特
開昭62−228440）、あるいは高純度AuにLa,Beを所定量
含有（特開昭60−30158）などが知られており、一定の
要件下においてはそれぞれ有用性がある。For example, it is known that high purity Au contains a predetermined amount of La, Pb, Be, Ca (JP-A-62-228440), or high purity Au contains a predetermined amount of La, Be (JP-A-60-30158). And they are useful under certain requirements.

しかるに近時、LSIパッケージの多ピン化に伴いボン
ディング形態におけるワイヤループは、従来品に較べ長
ループであり、高ループであることが要求されるように
なった。Recently, however, with the increasing number of pins in LSI packages, wire loops in the bonding form are required to be longer loops and higher loops than conventional products.

すなわち、ループだれを起すことなくループ高さを保
持すること及び長ループでもワイヤー曲りを生じない特
性、具体的にはボールネック部の引張り強度（ネック強
度）が高く、ループ高さが大きく、かつワイヤー曲りの
少ないことが要求される。That is, the characteristic that the loop height is maintained without causing loop dripping and that the wire is not bent even with a long loop, specifically, the tensile strength (neck strength) of the ball neck portion is high, and the loop height is large, and It is required that the wire bend is small.

而して従来金線において、添加元素の種別及びその含
有率の範囲では前記要求を満足し得ず、半導体素子の信
頼性向上が望めなかった。Therefore, in the conventional gold wire, the above requirements cannot be satisfied within the range of the type of the additive element and the content ratio thereof, and the reliability of the semiconductor element cannot be improved.

本発明は斯る従来事情に鑑み、長ループ，高ループの
要求を満足し、半導体素子の高い信頼性を確保し得るボ
ンディング用金線を提供することを目的とする。In view of such conventional circumstances, it is an object of the present invention to provide a bonding gold wire that satisfies the requirements of long loop and high loop and can secure high reliability of a semiconductor element.

（課題を解決するための技術的手段） 斯る本発明のボンディング用金線は、Laを30〜200重
量ppm、Beを１〜20重量ppm、Caを１〜20重量ppm、白金
族元素の中から１種又は２種以上を１〜60重量ppm含有
し、残部が高純度Auからなることを特徴とする。(Technical means for solving the problem) The bonding gold wire of the present invention, La is 30 to 200 wtppm, Be is 1 to 20 wtppm, Ca is 1 to 20 wtppm, and platinum group element It is characterized in that it contains 1 to 60 ppm by weight of one kind or two or more kinds thereof, and the balance is made of high-purity Au.

Auは不可避不純物を含む99.99％以上のものを原材料
として用いる。For Au, 99.99% or more containing inevitable impurities is used as a raw material.

本発明のAu合金において、その添加元素、La,Be,Ca及
び白金族元素は次の如く作用する。In the Au alloy of the present invention, the additive elements, La, Be, Ca and platinum group elements act as follows.

Laは高温時の引張り強度（高温強度）を高め、ボール
形成時の結晶微細化を促進させ、長ループでのワイヤー
曲りを抑制するとともに樹脂モールド時のワイヤー流れ
を抑制する作用を有し、その含有率が30重量ppm未満で
は前記作用特性を満足し得ない。La enhances tensile strength at high temperature (high temperature strength), promotes crystal refinement during ball formation, suppresses wire bending in long loops, and suppresses wire flow during resin molding. If the content is less than 30 ppm by weight, the above action characteristics cannot be satisfied.

又、Laの含有率が200重量ppmを越えると、ボンディン
グ後の接合強度が低下するとともにボール硬さが大きく
なってボンディング時のチップ割れの原因となる。On the other hand, if the La content exceeds 200 ppm by weight, the bonding strength after bonding decreases and the ball hardness increases, which causes chip cracking during bonding.

Beは金線における常温の引張り強度を高めるとともに
Laと同様に金線のボール形成時の結晶粒を微細化させ、
長ループでのワイヤー曲りを抑制する作用を有し、その
含有率が１重量ppm未満では所期の作用が得られない。Be enhances the tensile strength of the gold wire at room temperature and
As with La, the crystal grains at the time of ball formation of the gold wire are refined,
It has the effect of suppressing wire bending in long loops, and if its content is less than 1 ppm by weight, the desired effect cannot be obtained.

又、Beの含有率が20重量ppmを越えると、接合強度が
低下するとともボンディング時のネック切れ，チップ割
れの原因となる。Further, if the Be content exceeds 20 ppm by weight, the joint strength is reduced and the neck breakage or chip cracking during bonding is caused.

Caは、金線における高温強度を特に向上させ、常温引
張り強度を高め、経時変化を抑えるとともにボール形成
時の結晶微細化を促進させ、樹脂モールド時のワイヤー
流れを抑制する作用を有し、その含有率が１重量ppm未
満では前記作用が得られない。Ca has the effect of particularly improving the high temperature strength of the gold wire, increasing the room temperature tensile strength, suppressing the change over time and promoting the refinement of crystals during ball formation, and suppressing the wire flow during resin molding. If the content is less than 1 ppm by weight, the above effect cannot be obtained.

又、Caの含有率が20重量ppmを越えると、接合強度が
低下するとともにネック切れ，チップ割れの原因にな
り、ループだれ等ループ形状の異常が発生することが多
い。Further, when the Ca content exceeds 20 ppm by weight, the joint strength is lowered, and the neck is broken or the chip is cracked, and an abnormal loop shape such as a loop droop often occurs.

白金族元素はPt,Ir,Pd,Rhなどであり、La,Be及びCaと
の共存において、とくに長ループでのワイヤー曲りを抑
制するものであり、その含有率が１重量ppm未満ではそ
の作用を満足し得ず、60重量ppmを越えると接合強度が
低下するとともにネック切れ，チップ割れの原因とな
る。Platinum group elements are Pt, Ir, Pd, Rh, etc., which suppress the wire bending especially in long loops in the coexistence with La, Be and Ca. However, if it exceeds 60 ppm by weight, the bonding strength will be reduced and the neck will be broken or the chip will be cracked.

（作用） 本発明によれば前記金線の組成によって、ボンディン
グ時におけるボールネック部（Ｂ点）の結晶粒が微細化
されてネック強度が向上するとともに金線の機械的強度
が向上する結果、長ループ，高ループのループ形態が安
定する。(Operation) According to the present invention, the composition of the gold wire makes the crystal grains of the ball neck portion (point B) during bonding finer to improve the neck strength and the mechanical strength of the gold wire. The loop form of long loop and high loop is stable.

（実施例） 以下に実施例を説明する。(Example) An example is described below.

各試料は高純度Au（99.999％）にLa,Be,Caと白金族元
素の中からPt,Pdの１種又は２種とを添加して溶解鋳造
し、次に溝ロール加工を施し、その途中で焼なまし処理
を施した後に線引加工で25μφの極細金線に成形したも
のである。Each sample was melt-cast by adding high-purity Au (99.999%) with La, Be, Ca and one or two of Pt and Pd from the platinum group elements, and then subjected to groove roll processing. After being annealed on the way, it is formed into a 25 μφ ultrafine gold wire by wire drawing.

各試料の元素含有率は表（１）に示す通りであり、そ
の試料No.1〜７は本発明の実施品、試料No.8〜12は本発
明の組成範囲にない比較品である。The element content of each sample is as shown in Table (1). Sample Nos. 1 to 7 are products of the present invention, and sample Nos. 8 to 12 are comparative products not in the composition range of the present invention.

上記試料をもって機械的特性及びボンディング特性を
測定した結果を次表（２）に示す。 The following table (2) shows the results of measuring the mechanical properties and bonding properties of the above samples.

この測定結果より本発明の組成は前述した範囲で最適
であることが理解される。 From this measurement result, it is understood that the composition of the present invention is optimal within the above range.

（効果） 本発明によれば、ボールネック部の強度が強化される
とともに機械的強度が向上し、ループ高さが高く、ルー
プ長さが大きなループ形態としてもボンディング特性が
改善され、多ピン化に対応してその信頼性の高い半導体
素子を提供することができる。(Effect) According to the present invention, the strength of the ball neck portion is strengthened and the mechanical strength is improved, the loop height is high, and the bonding characteristics are improved even in the loop form having a large loop length, and the number of pins is increased. Accordingly, it is possible to provide a highly reliable semiconductor element.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】Laを30〜200重量ppm、Beを１〜20重量pp
m、Caを１〜20重量ppm、白金族元素の中から１種又は２
種以上を１〜60重量ppm含有し、残部が高純度Auからな
る半導体素子のボンディング用金線。1. La to 30 to 200 ppm by weight, Be to 1 to 20 ppm by weight
1 to 20 ppm by weight of m and Ca, one or two from platinum group elements
Gold wire for semiconductor element bonding, containing 1 to 60 ppm by weight of seeds or more, and the remainder being high-purity Au.
JP1109449A 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements Expired - Fee Related JP2680415B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP1109449A JP2680415B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements
KR1019890015637A KR920010119B1 (en) 1989-04-28 1989-10-30 Gold wire for the bonding of a semiconductor device
GB8924398A GB2231336B (en) 1989-04-28 1989-10-30 Gold wire for the bonding of a semiconductor device
US07/429,485 US4938923A (en) 1989-04-28 1989-10-31 Gold wire for the bonding of a semiconductor device
DE3936281A DE3936281A1 (en) 1989-04-28 1989-10-31 GOLDEN WIRE FOR CONNECTING A SEMICONDUCTOR DEVICE
GB9301997A GB2262746B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device
GB9301998A GB2262944B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device
GB9301999A GB2262747B (en) 1989-04-28 1993-02-02 Gold wire for the bonding of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1109449A JP2680415B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements

Publications (2)

Publication Number Publication Date
JPH02288348A JPH02288348A (en) 1990-11-28
JP2680415B2 true JP2680415B2 (en) 1997-11-19

Family

ID=14510520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1109449A Expired - Fee Related JP2680415B2 (en) 1989-04-28 1989-04-28 Gold wire for bonding semiconductor elements

Country Status (1)

Country Link
JP (1) JP2680415B2 (en)

Also Published As

Publication number Publication date
JPH02288348A (en) 1990-11-28

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