GB2211991B - Electrical isolation of regions within semiconductor bodies - Google Patents
Electrical isolation of regions within semiconductor bodiesInfo
- Publication number
- GB2211991B GB2211991B GB8825311A GB8825311A GB2211991B GB 2211991 B GB2211991 B GB 2211991B GB 8825311 A GB8825311 A GB 8825311A GB 8825311 A GB8825311 A GB 8825311A GB 2211991 B GB2211991 B GB 2211991B
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- electrical isolation
- semiconductor bodies
- bodies
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002955 isolation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878725497A GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8825311D0 GB8825311D0 (en) | 1988-11-30 |
GB2211991A GB2211991A (en) | 1989-07-12 |
GB2211991B true GB2211991B (en) | 1991-02-20 |
Family
ID=10626199
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878725497A Pending GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
GB8825311A Expired - Fee Related GB2211991B (en) | 1987-10-30 | 1988-10-28 | Electrical isolation of regions within semiconductor bodies |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878725497A Pending GB8725497D0 (en) | 1987-10-30 | 1987-10-30 | Isolation of silicon |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8725497D0 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6486041B2 (en) | 1997-05-12 | 2002-11-26 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6513564B2 (en) | 1999-08-10 | 2003-02-04 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8101503B2 (en) | 1996-05-15 | 2012-01-24 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (en) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
FR2714524B1 (en) * | 1993-12-23 | 1996-01-26 | Commissariat Energie Atomique | PROCESS FOR MAKING A RELIEF STRUCTURE ON A SUPPORT IN SEMICONDUCTOR MATERIAL |
US7148119B1 (en) | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
DE69408671T2 (en) * | 1994-09-23 | 1998-06-18 | Cons Ric Microelettronica | Process for the production of buried oxide layers in a silicon wafer |
CN1132223C (en) | 1995-10-06 | 2003-12-24 | 佳能株式会社 | Semiconductor substrate and producing method thereof |
FR2756847B1 (en) * | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | METHOD FOR SEPARATING AT LEAST TWO ELEMENTS OF A STRUCTURE IN CONTACT WITH THEM BY ION IMPLANTATION |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
DE69733471D1 (en) | 1997-07-03 | 2005-07-14 | St Microelectronics Srl | Method of manufacturing devices in a semiconductive substrate |
FR2773261B1 (en) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS |
FR2774510B1 (en) * | 1998-02-02 | 2001-10-26 | Soitec Silicon On Insulator | PROCESS FOR TREATING SUBSTRATES, ESPECIALLY SEMICONDUCTORS |
FR2823599B1 (en) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING |
FR2823596B1 (en) | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME |
JP4277481B2 (en) * | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | Semiconductor substrate manufacturing method and semiconductor device manufacturing method |
JP2004063730A (en) * | 2002-07-29 | 2004-02-26 | Shin Etsu Handotai Co Ltd | Manufacturing method for soi wafer |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (en) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING |
FR2849017B1 (en) * | 2002-12-20 | 2005-11-18 | Michel Bruel | METHOD FOR PROCESSING A STRUCTURE FOR OBTAINING INTERNAL SPACE AND STRUCTURE HAVING INTERNAL SPACE |
FR2856844B1 (en) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT |
FR2857953B1 (en) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME |
FR2861497B1 (en) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION |
FR2889887B1 (en) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | METHOD FOR DEFERING A THIN LAYER ON A SUPPORT |
FR2891281B1 (en) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A THIN FILM ELEMENT |
DE102006004870A1 (en) * | 2006-02-02 | 2007-08-16 | Siltronic Ag | Semiconductor layer structure and method for producing a semiconductor layer structure |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
FR2910179B1 (en) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE |
FR2925221B1 (en) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
FR2947098A1 (en) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER |
-
1987
- 1987-10-30 GB GB878725497A patent/GB8725497D0/en active Pending
-
1988
- 1988-10-28 GB GB8825311A patent/GB2211991B/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101503B2 (en) | 1996-05-15 | 2012-01-24 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US6528391B1 (en) | 1997-05-12 | 2003-03-04 | Silicon Genesis, Corporation | Controlled cleavage process and device for patterned films |
US7759217B2 (en) | 1997-05-12 | 2010-07-20 | Silicon Genesis Corporation | Controlled process and resulting device |
US6391740B1 (en) | 1997-05-12 | 2002-05-21 | Silicon Genesis Corporation | Generic layer transfer methodology by controlled cleavage process |
US6458672B1 (en) | 1997-05-12 | 2002-10-01 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US6486041B2 (en) | 1997-05-12 | 2002-11-26 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6558802B1 (en) | 1997-05-12 | 2003-05-06 | Silicon Genesis Corporation | Silicon-on-silicon hybrid wafer assembly |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6513564B2 (en) | 1999-08-10 | 2003-02-04 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
Also Published As
Publication number | Publication date |
---|---|
GB8725497D0 (en) | 1987-12-02 |
GB8825311D0 (en) | 1988-11-30 |
GB2211991A (en) | 1989-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19981028 |