GB2191335B - Substrate support structure for ion implantation device - Google Patents

Substrate support structure for ion implantation device

Info

Publication number
GB2191335B
GB2191335B GB8702093A GB8702093A GB2191335B GB 2191335 B GB2191335 B GB 2191335B GB 8702093 A GB8702093 A GB 8702093A GB 8702093 A GB8702093 A GB 8702093A GB 2191335 B GB2191335 B GB 2191335B
Authority
GB
United Kingdom
Prior art keywords
support structure
ion implantation
substrate support
implantation device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8702093A
Other languages
English (en)
Other versions
GB8702093D0 (en
GB2191335A (en
Inventor
Takayuki Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8702093D0 publication Critical patent/GB8702093D0/en
Publication of GB2191335A publication Critical patent/GB2191335A/en
Application granted granted Critical
Publication of GB2191335B publication Critical patent/GB2191335B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
GB8702093A 1986-05-29 1987-01-30 Substrate support structure for ion implantation device Expired - Lifetime GB2191335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61126763A JP2582552B2 (ja) 1986-05-29 1986-05-29 イオン注入装置

Publications (3)

Publication Number Publication Date
GB8702093D0 GB8702093D0 (en) 1987-03-04
GB2191335A GB2191335A (en) 1987-12-09
GB2191335B true GB2191335B (en) 1990-11-21

Family

ID=14943319

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8702093A Expired - Lifetime GB2191335B (en) 1986-05-29 1987-01-30 Substrate support structure for ion implantation device

Country Status (4)

Country Link
US (1) US4794305A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2582552B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3709093A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2191335B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0362418A1 (en) * 1988-10-03 1990-04-11 International Business Machines Corporation Improved method and system for the angled exposition of a surface portion to an emission impinging obliquely thereon, and semiconductor wafers having facets exposed according to said method
JPH077654B2 (ja) * 1988-04-01 1995-01-30 株式会社日立製作所 走査型電子顕微鏡
US4929840A (en) * 1989-02-28 1990-05-29 Eaton Corporation Wafer rotation control for an ion implanter
US4975586A (en) * 1989-02-28 1990-12-04 Eaton Corporation Ion implanter end station
US4943728A (en) * 1989-02-28 1990-07-24 Eaton Corporation Beam pattern control system for an ion implanter
JPH0348200A (ja) * 1989-03-20 1991-03-01 Hitachi Ltd シンクロトロン放射光利用装置及びその方法
US5003183A (en) * 1989-05-15 1991-03-26 Nissin Electric Company, Limited Ion implantation apparatus and method of controlling the same
US5168021A (en) * 1989-09-21 1992-12-01 Ushio Denki Method for exposing predetermined area of peripheral part of wafer
GB8924223D0 (en) * 1989-10-27 1989-12-13 Superion Ltd Method and apparatus relating to ion implantation
FR2660106B1 (fr) * 1990-03-23 1994-05-13 Commissariat A Energie Atomique Dispositif pour rendre homogene l'implantation d'ions sur la surface d'echantillons plans.
US5077511A (en) * 1990-04-09 1991-12-31 Nec Electronics, Inc. Stepper motor drive for way flow end station
US5155369A (en) * 1990-09-28 1992-10-13 Applied Materials, Inc. Multiple angle implants for shallow implant
US5160846A (en) * 1990-10-03 1992-11-03 Eaton Corporation Method and apparatus for reducing tilt angle variations in an ion implanter
US5091655A (en) * 1991-02-25 1992-02-25 Eaton Corporation Reduced path ion beam implanter
DE4140710A1 (de) * 1991-12-10 1993-06-17 Integrated Circuit Testing Positioniersystem
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
DE69330699T2 (de) * 1992-07-16 2002-07-04 Axcelis Technologies, Inc. Ionenstrahl-Abrasterungsvorrichtung
US5406088A (en) * 1993-12-22 1995-04-11 Eaton Corporation Scan and tilt apparatus for an ion implanter
GB2291889B (en) * 1994-07-27 1998-02-25 Gec Marconi Avionics Holdings Depositing coatings of materials on a substrate
JP3139378B2 (ja) * 1996-07-03 2001-02-26 株式会社日立製作所 イオン注入装置
DE19737548A1 (de) * 1997-08-28 1999-03-04 Inst Oberflaechenmodifizierung Kipp-, rotier- und thermostatierbare Substratstation zum Ionenstrahlätzen
GB0002669D0 (en) 2000-02-04 2000-03-29 Applied Materials Inc A method and apparatus for implanting semiconductor wafer substrates
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
US6727509B2 (en) * 2001-12-17 2004-04-27 Michel Pharand Wafer pedestal tilt mechanism
KR100439843B1 (ko) * 2002-01-15 2004-07-12 삼성전자주식회사 이온주입설비의 대상체 정렬각도 검증장치 및 그 방법
US6881967B1 (en) * 2004-01-22 2005-04-19 Axcelis Technologies, Inc. Method of correction for wafer crystal cut error in semiconductor processing
US6940079B2 (en) * 2004-01-22 2005-09-06 Axcelis Technologies, Inc. Method of correction for wafer crystal cut error in semiconductor processing
US7982195B2 (en) * 2004-09-14 2011-07-19 Axcelis Technologies, Inc. Controlled dose ion implantation
KR100782380B1 (ko) * 2005-01-24 2007-12-07 삼성전자주식회사 반도체 제조장치
DE102009004158B4 (de) * 2009-01-09 2023-03-30 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zur Funktionsflächenbeschichtung
JP2015222787A (ja) * 2014-05-23 2015-12-10 トヨタ自動車株式会社 イオン注入方法および半導体装置の製造方法
JP2018163878A (ja) * 2017-03-27 2018-10-18 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
CN117878003B (zh) * 2024-01-12 2025-08-08 西安奕斯伟材料科技股份有限公司 调整晶圆的参数的方法、装置、设备及计算机存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1490481A (en) * 1975-01-22 1977-11-02 Commissariat Energie Atomique Particle implantation
GB1540751A (en) * 1975-01-15 1979-02-14 Draegerwerk Ag Measuring probes
GB2087766A (en) * 1980-11-21 1982-06-03 United Technologies Corp Indexing apparatus for electron beam drilling or welding
GB2168080A (en) * 1984-11-27 1986-06-11 Sony Corp Vapour deposition apparatus and epitaxial layer growth methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56128555A (en) * 1980-03-13 1981-10-08 Hitachi Ltd Ion implantation device
JPS58100350A (ja) * 1981-12-08 1983-06-15 Mitsubishi Electric Corp イオン注入装置
FR2529383A1 (fr) * 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
JPS59121199A (ja) * 1982-12-24 1984-07-13 Hitachi Micro Comput Eng Ltd イオン打込方法及び装置
JPS6276137A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd イオン源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1540751A (en) * 1975-01-15 1979-02-14 Draegerwerk Ag Measuring probes
GB1490481A (en) * 1975-01-22 1977-11-02 Commissariat Energie Atomique Particle implantation
GB2087766A (en) * 1980-11-21 1982-06-03 United Technologies Corp Indexing apparatus for electron beam drilling or welding
GB2168080A (en) * 1984-11-27 1986-06-11 Sony Corp Vapour deposition apparatus and epitaxial layer growth methods

Also Published As

Publication number Publication date
DE3709093C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-21
DE3709093A1 (de) 1987-12-03
US4794305A (en) 1988-12-27
JPS62281322A (ja) 1987-12-07
GB8702093D0 (en) 1987-03-04
JP2582552B2 (ja) 1997-02-19
GB2191335A (en) 1987-12-09

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951108

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970130