GB2172161B - High voltage solid state switch - Google Patents

High voltage solid state switch

Info

Publication number
GB2172161B
GB2172161B GB08604608A GB8604608A GB2172161B GB 2172161 B GB2172161 B GB 2172161B GB 08604608 A GB08604608 A GB 08604608A GB 8604608 A GB8604608 A GB 8604608A GB 2172161 B GB2172161 B GB 2172161B
Authority
GB
United Kingdom
Prior art keywords
high voltage
solid state
state switch
voltage solid
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08604608A
Other languages
English (en)
Other versions
GB8604608D0 (en
GB2172161A (en
Inventor
George M Conrad
Kenneth M Smalley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB8604608D0 publication Critical patent/GB8604608D0/en
Publication of GB2172161A publication Critical patent/GB2172161A/en
Application granted granted Critical
Publication of GB2172161B publication Critical patent/GB2172161B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
GB08604608A 1985-03-04 1986-02-25 High voltage solid state switch Expired GB2172161B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70793185A 1985-03-04 1985-03-04

Publications (3)

Publication Number Publication Date
GB8604608D0 GB8604608D0 (en) 1986-04-03
GB2172161A GB2172161A (en) 1986-09-10
GB2172161B true GB2172161B (en) 1989-01-18

Family

ID=24843724

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08604608A Expired GB2172161B (en) 1985-03-04 1986-02-25 High voltage solid state switch

Country Status (6)

Country Link
JP (1) JPS61205020A (ja)
AU (1) AU588020B2 (ja)
CA (1) CA1274581A (ja)
DE (1) DE3607046A1 (ja)
FR (1) FR2578368B1 (ja)
GB (1) GB2172161B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
US5227781A (en) * 1991-03-01 1993-07-13 Litton Systems, Inc. Mosfet switch matrix
US7449801B2 (en) 2002-11-28 2008-11-11 Infineon Technologies Ag Semiconductor circuit arrangement for controlling a high voltage or a current of high current intensity
DE10255602A1 (de) * 2002-11-28 2004-06-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiterschaltungsanordnung zum Steuern einer hohen Spannung oder eines Stromes großer Stromstärke

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710147A (en) * 1971-06-29 1973-01-09 Plessey Handel Investment Ag Transistor switches for high voltage applications
SE360227B (ja) * 1972-02-01 1973-09-17 Asea Ab
SE369257B (ja) * 1972-12-08 1974-08-12 Asea Ab
BE798049A (fr) * 1973-04-11 1973-10-11 Acec Dispositif de commande de thyristors ou autres elements semiconducteurs
JPS57166827A (en) * 1981-04-07 1982-10-14 Nissan Motor Electronic part power source supply control device
CH659528A5 (de) * 1982-03-16 1987-01-30 V Elektrotech I V I Lenina Einrichtung zur uebertragung und verteilung einer lichtstrahlung.
JPS5911772A (ja) * 1982-07-12 1984-01-21 Kansai Electric Power Co Inc:The 光点弧サイリスタの過電圧保護装置
JPS59117824A (ja) * 1982-12-24 1984-07-07 Toshiba Corp オンゲ−ト回路
DE3340546A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Gitterimpulsmodulator fuer eine mit einem steuergitter ausgeruestete hochleistungs-wanderfeldroehre
DE3483834D1 (de) * 1983-12-05 1991-02-07 Mitsubishi Electric Corp Hochspannungsthyristorkonverter.
US4697096A (en) * 1985-03-04 1987-09-29 Raytheon Company High voltage solid state switch
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch

Also Published As

Publication number Publication date
AU5371786A (en) 1986-09-11
AU588020B2 (en) 1989-09-07
FR2578368B1 (fr) 1992-08-14
CA1274581A (en) 1990-09-25
FR2578368A1 (fr) 1986-09-05
GB8604608D0 (en) 1986-04-03
JPS61205020A (ja) 1986-09-11
GB2172161A (en) 1986-09-10
DE3607046A1 (de) 1986-12-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940225