GB2168333B - A method for continuously producing silicon nitride and silicon carbide - Google Patents

A method for continuously producing silicon nitride and silicon carbide

Info

Publication number
GB2168333B
GB2168333B GB08529847A GB8529847A GB2168333B GB 2168333 B GB2168333 B GB 2168333B GB 08529847 A GB08529847 A GB 08529847A GB 8529847 A GB8529847 A GB 8529847A GB 2168333 B GB2168333 B GB 2168333B
Authority
GB
United Kingdom
Prior art keywords
continuously producing
silicon nitride
silicon carbide
silicon
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08529847A
Other languages
English (en)
Other versions
GB2168333A (en
GB8529847D0 (en
Inventor
Minoru Tanaka
Kazuhisa Niwano
Yasunori Kitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tateho Chemical Industries Co Ltd
Original Assignee
Tateho Chemical Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateho Chemical Industries Co Ltd filed Critical Tateho Chemical Industries Co Ltd
Publication of GB8529847D0 publication Critical patent/GB8529847D0/en
Publication of GB2168333A publication Critical patent/GB2168333A/en
Application granted granted Critical
Publication of GB2168333B publication Critical patent/GB2168333B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
GB08529847A 1984-12-14 1985-12-04 A method for continuously producing silicon nitride and silicon carbide Expired GB2168333B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59264814A JPS61146797A (ja) 1984-12-14 1984-12-14 窒化珪素ならびに炭化珪素の連続的製造方法

Publications (3)

Publication Number Publication Date
GB8529847D0 GB8529847D0 (en) 1986-01-15
GB2168333A GB2168333A (en) 1986-06-18
GB2168333B true GB2168333B (en) 1988-12-07

Family

ID=17408581

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08529847A Expired GB2168333B (en) 1984-12-14 1985-12-04 A method for continuously producing silicon nitride and silicon carbide

Country Status (4)

Country Link
JP (1) JPS61146797A (ja)
DE (1) DE3543752A1 (ja)
FR (1) FR2574775B1 (ja)
GB (1) GB2168333B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0298084A4 (en) * 1986-03-14 1989-10-27 Commw Scient Ind Res Org EDUCATION OF A CERAMIC PRODUCT.
US4873069A (en) * 1987-03-09 1989-10-10 American Matrix, Inc. Method for the preparation of silicon carbide whiskers
DE3906986C1 (ja) * 1989-03-04 1990-07-19 Linn High Therm Gmbh, 8459 Hirschbach, De
JP2517854B2 (ja) * 1991-08-16 1996-07-24 工業技術院長 繊維状ケイ素化合物の連続式製造方法
JP2002321156A (ja) 2001-04-19 2002-11-05 Minebea Co Ltd 研磨洗浄方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754076A (en) * 1970-10-30 1973-08-21 Univ Utah Production of silicon carbide from rice hulls
US3855395A (en) * 1972-09-06 1974-12-17 Univ Utah Production of silicon nitride from rice hulls
JPS53133600A (en) * 1977-04-28 1978-11-21 Onoda Cement Co Ltd Production of silicon nitride
US4248844A (en) * 1980-01-28 1981-02-03 Great Lakes Carbon Corporation Production of SiC from rice hulls and silica
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
US4284612A (en) * 1980-01-28 1981-08-18 Great Lakes Carbon Corporation Preparation of SiC whiskers
WO1983002108A1 (en) * 1981-12-16 1983-06-23 Atlantic Richfield Co Continuous silicon carbide whisker production
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
JPS5935009A (ja) * 1982-08-19 1984-02-25 Toyota Central Res & Dev Lab Inc 窒化珪素の製造方法
JPS59128300A (ja) * 1982-12-28 1984-07-24 Tateho Kagaku Kogyo Kk 窒化珪素ウイスカ−を回収後、炭化珪素ウイスカ−を製造する方法
US4613490A (en) * 1984-05-08 1986-09-23 Mitsubishi Gas Chemical Company, Inc. Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof

Also Published As

Publication number Publication date
JPH0227318B2 (ja) 1990-06-15
DE3543752A1 (de) 1986-07-10
GB2168333A (en) 1986-06-18
DE3543752C2 (ja) 1989-01-26
FR2574775A1 (fr) 1986-06-20
JPS61146797A (ja) 1986-07-04
GB8529847D0 (en) 1986-01-15
FR2574775B1 (fr) 1990-10-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19951204