GB2132016A - A semiconductor device - Google Patents

A semiconductor device Download PDF

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Publication number
GB2132016A
GB2132016A GB08332597A GB8332597A GB2132016A GB 2132016 A GB2132016 A GB 2132016A GB 08332597 A GB08332597 A GB 08332597A GB 8332597 A GB8332597 A GB 8332597A GB 2132016 A GB2132016 A GB 2132016A
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Prior art keywords
semiconductor
semiconductor layer
layer
carrier concentration
less
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GB08332597A
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GB2132016B (en
GB8332597D0 (en
Inventor
Kazuo Sakai
Yuichi Matsushima
Shigeyuki Akiba
Katsuyuki Utaka
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KDDI Corp
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Kokusai Denshin Denwa KK
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Priority claimed from JP57213301A external-priority patent/JPS59104177A/en
Priority claimed from JP57213302A external-priority patent/JPS59104178A/en
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Publication of GB8332597D0 publication Critical patent/GB8332597D0/en
Publication of GB2132016A publication Critical patent/GB2132016A/en
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Publication of GB2132016B publication Critical patent/GB2132016B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)

Description

1 GB 2 132 016 A 1
SPECIFICATION
A semiconductor device The present invention relates to a semiconductor device. The invention is applicable both to a device having 5 an n-i-p-i-n doping configuration and to one having a p-i-n-i-p configuration. However, in the following an n-i-p-i-n structure will be described for the sake of brevity.
An n-i-p-i-n device is one which has a thin p-layer about 100 A formed in an i layer of an n-i-n structure, and one which is now being looked to as a high-speed device as it is a device in which mainly majority carriers take part in conduction. Moreover, a three-terminal element utilizing this structure has been recently proposed. Further, this device can also be employed as a high sensitivity photo-detector with no excess noise and has very wide applications as a very high-gain, high speed photo-dectector. However, the conventional structure of the type has a defect, such as a large dark current under light irradiation.
An object of the present invention is to provide a semiconductor device capable of permitting reduction in the reverse current (the dark current) without introducing any difficult problems, by increasing the height of 15 a potential barrier against majority carriers.
According to the present invention, there is provided a semiconductor device, which is formed by sequential lamination of a first semiconductor layer having a carrier concentration of more than 1017 cm-1, a second semiconductor layer having a carrier concentration of less than 1016 cm-3, a third semiconductor layer having a carrier concentration of more than 1017 CM-3 and a thickness of less than wo A, a fourth semiconductor layer having a carrier concentration of less than 1016 cm and a fifth semiconductor layer having a carrier concentration of more than 101 7 cm-3 and, in which the first and fifth semiconductor layers are of the same conductivity type and the third semiconductor layer is different in conductivity type from that of the fifth semiconductor layer.
According to another aspect of the present invention, there is provided a semiconductor device, which is 25 formed by a sequential lamination of a first semiconductor layer having a carrier concentration of more than 1017 CM-3, a second semiconductor layer having a carrier concentration of less than 1016 em-3, a third semiconductor layer having a carrier concentration of more than 1017 cm-3 and a thickness less than 300 A, a fourth semiconductor layer having a carrier concentration of less than 1016 CM-3 and a fifth semiconductor layer having a carrier concentration of more than 1017 CM- 3 and, in which the first and fifth semiconductor 30 layers are of the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer, characterized in that the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers.
In accordance with a further aspect of the present invention, there is also provided a semiconductor element, which is formed by a sequential lamination of a first semiconductor layer having a carrier 35 concentration of more than 1017 CM--3, a second semiconductor layer having a carrier concentration of less than 1016 CM 3, a third semiconductor layer having a carrier concentration of more than 1017 cm-3anda thickness less than 300 A, a fourth semiconductor layer having a carrier concentration of less than 1016 CM-3 and a fifth semiconductor layer having a carrier concentration of more than 1017 CM-3, and in which the first and fifth semiconductor layers are the same in conductivity type while the third semiconductor layer is different in conductivity type from the fifth semiconductor layer, characterized in that an annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer is formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
Embodiments of the present invention will now be described, byway of example, in comparison with prior art and with reference to the accompanying drawings, in which:
Figures 1A and 18 show the band structure of a conventional n-i-p-i-n device in its thermal equilibrium state and when voltage V is applied; Figure 2 is a cross-sectional view illustrating an embodiment of the present invention; Figure 3 is the band structure of the embodiment of Figure 2 in its thermal equilibrium state; Figure 4 is a cross-sectional view illustrating another embodiment of the present invention; Figure 5 shows the band structure of the embodiment of Figure 4 in its thermal equilibrium state; Figures 6A and 68 are respectively a perspective view and a cross- sectional view of a planar type n-i-p-i-n device embodying the present invention; and Figure 7 is a cross-sectional view showing a device of a partly modified layer structure of the device depicted in Figures 6A and 6B.
A description will be given first of the operation of the n-i-p-i-n device. Figures 1A and 1 B show the thermal equilibrium state of a conventional n-i-p-i-n device using GaAs and its band structure when supplied with a voltage V,)BO representing the height of a potential barrier between the two n-layers. The density J of a current flowing upon application of the voltage V is expressed by the equation of thermionic emission:
J = AT2 (1(bBO qa2V esp KT) [exp( iT-) - exp(- qa,V fl KT (1) GB 2 132 016 A 2 where A is an effective Richardson's constant, T is an absolute temperature, k is the Boltzmann's constant, q is an electronic charge, and ot, and CL2 are given by (xl = dj/(dl + c12) and (12 = d21(dl + c12) where d, and c12 are the thicknesses of the two i-layers. If d, 0 c12, then the voltage-current characteristic becomes asymmetric. Therefore, this device is similar to an ordinary pn junction diode.
In the absence of light irradiation, since no holes are injected into this device, its response speed is very high and the device is looked to as an ultra-high speed device. On the other hand, when the device is exposed to irradiation by light, holes optically excited minority carriers centre on the p-layer portion. This functions to reduce the value of the potential barrier (1)B0, causing an increase in electron current flowing through the barrier. That is, the irradiation by light causes a flow of photo-currents. It has been reported that the sensitivity at this time is about 700 AIW, which is nearly a thousandfold increase in terms of gain. Further, 10 as regards the response speed, a value of 50 to 500 ps has also been reported. Thus, this device is looked to as a very high-gain, high-speed photo-detector.
With the conventional structure, however, for instance, n-i-p-i-n devices employing GaAs mostly have a barrier height of about 0.6 eV and, consequently, the current value in the reverse-biased condition (or dark current in the case of a photo-detector) tends to be relatively large. The potential barrier 4)BO is obtained by 15 solving the Poisson's equation and given by:
)BO = drd2. NAXA q (2) dl+d2 FS 20 where NA is the acceptor concentration in the p-layer, XA is the thickness of the p-layer and e. is the dielectric constant. The value of the potential barrier)130 can be increased by (1) making a difference between d, and d2 (cl, < d2) large and d, large, (2) making NA large and (3) making XA large. However, these solutions possess such defects as follows: Too large a value of di prolongs the lifetime of the holes to affect adversely 25 the high-speed response; too large a value of NA poses a problem in terms of crystal growth; and the p- layer is required only to serve as a barrier and too large a value Of XA leads to a loss of the high-speed response. The present invention will hereinafter be described in connection with embodiments thereof.
Example 1
Figure 2 illustrates, in cross-section, an embodiment of a mesa type n-ip-i-n device of the present invention. Reference numeral 1 indicates an n' -GaAs substrate; 2 designates an n-GaAs layer (n=l 0113CM-3 and a thickness of about 1 pm); 3 identifies an i-GaAs layer (P=1014CM-3 and a thickness of about 2 Rm); 4 denotes a p-GaO.A(0.3As layer (p=1018cm and a thickness of about 100 A), 5 represents an i-GaAs layer (n 51014CM-3 and a thickness of about 1000 k 6 shows an n- GaAs layer (n=lol- ICM-3 and a 35 thickness of about 1 Rm) and 7 and 8 refer to electrodes. Figure 3 shows the band structure of this device in its thermal equilibrium state. The potential barrier height as viewed from the n-layer 6 is larger than in the case in which the n-i-p-i-n structure is formed using only GaAs, substantially by a difference AEc in the conduction band energy level between the GaAs and the GaO.A(0.3As. The difference.5Eg in the energy band is-0.4 eV in this case. If AEc=0.85.5E9, then AEc0.34 eV. If the other conditions are the same, the 40 current density takes a viaue obtained when setting (bBO + AEc for (BO, and when AEc=0.34 eV, becomes about 10-6 times at room temperature, allowing a substantial reduction in the reverse current (the dark current).
P Example 2 in Example 1 all the semiconductor layers, except the p-layer, are of the same composition. This structure reduces the electron current but hardly affects the hole current. However, if it is used as a photo-detector, since a ratio of the electron dark current to the hole dark current are related to its gain, the hole dark current has to be decreased. This example shows the structure in which the hole current also decreases.
Figure 4 is a cross-sectional view of the semiconductor device of this Example, and this device was 50 designed as a photo-detector for a band of wavelengths of 0.9 to 1.7 iLm. Reference numeral 10 indicates an n '-InP substrate; 11 designates an N-InP layer (n=l O'cm and a thickness of about 2 Lm); 12 identifies an n-AtAsO.4Sbo.6 layer (n=l 018CM-3 and a thickness of about 100 M 13 denotes an i-In0.53Ga0.47As layer (n:51015CM-3 and a thickness of about 1000 M 14 represents a p-AiAsO.4SbO. 6 layer (p1018CM-3 and a thickness of about 100 M 15 shows an i-inO.53Gao.47As layer (n'10"cm-' and a thickness of about 1000 k 55 16 refers to an n-inP layer (n=10"cm-' and a thickness of about 1 lim); and 17 and 18 signify electrodes. The energy band of the A(AsOASbo.6 is about 1.9 eV, which is larger than the energy band gaps of the In0.53Ga0A7As and the InP. Figure 5 shows the band structure of this device in its thermal equilibrium state. The provision of the P-AtAsO.4Sb layer 14 increases the height of the potential barrier and causes a substantial reduction in the electron current. On the other hand, the provision of the n-AAso.4Sbo.6 layer 12 60 prevents a defect where holes generated in small quantities in the n-inP layer 11 are diffused and injected into the i-In0.53Ga0A7As layer 13, thereby reducing the dark current by the holes. That is, by forming two A AsOASbo.6 layers of the n- i-p-i-n structure, the dark currents produced by both the electrodes and holes can be reduced. Further, when applying light of O9 to 1.7 pm wavelength to this structure, light is absorbed only by the two i- layers and is hardly absorbed by then -layers on both sides, so that the response is i r W 3 GB 2 132 016 A 3 high-speed. That is, it is possible with a structure such as that shown in Figure 4to obtain a photo-detector which is low in dark current and has high-speed and high-gain.
While the above examples employ, as their materials, two combinations of the GaAs/GaA,(As series and the InIP/InGaAs/AeAsSb series, it is also possible, of course, to employ other combinations of semiconduc tors for example, GaPSb, AeGaAsSb, AflnAsP, AtPSb and so forth. Further, the present invention is not 5 limited specifically to the mesa type element but may also be applied to a planar type element and, moreover, it is applicable to a p-i-n-i-p element.
Such structures can be fabricated fully by a molecular beam epitaxial growth method for crystal growth and by other prior art processes.
As has been described in the foregoing, it is possible, according to the present invention to manufacture 10 an n-i-p-i-n device which is small in current, in other words, large in rise-voltage, and which can be widely applied to an ultra-high speed device and a high sensitivity photodetector.
As has been described, it is possible to fabricate a planar type n-i-p-in element of stable operation characteristic in accordance with the present invention, which can widely be applied to an ultra-high speed device and a high sensitivity photo-detector.
In practical production of n-i-p-i-n devices of the present invention, they have defects such as a large reverse current and unstable operation due to the influence of external atmosphere, if they are formed into mesa-types. Accordingly, devices of planar-type rather than of mesa-types are required for the stable operation. Planar type n-i-p-i-n devices have not previously been proposed.
Planar-type embodiments of the present invention will hereinafter be described in more detail.
is Example 3
Figures 6A and 613 illustrate an embodiment of a planar type n-i-p-i-n device of the present invention, Figure 6A being its perspective view including its cross-section and Figure 613 its cross-sectional view.
Reference numeral 30 indicates an n'-GaAs substrate; 31 designates an n=GaAs layer (n=l 018cm-' and a 25 thickness of about 1 lim); 32 identifies an i-GaAs layer (p 51011CM-3 and a thickness of about 2lim); 33 denotes a p-GaAs layer (p=l 011CM-3 and a thickness of about 100 k; 34 represents an i-GaAs layer (p 51011CM-3 and a thickness of about 1000 All; 35 shows an n-GaAs layer (n= 1017 cm- 3 and a thickness of about 1 Rm); 36 refers to an insulating film; 37 and 38 signify electrodes, and 39 indicates an annular region formed by a p-type or semi-insulating semiconductor. The annular region 39 is formed to extend from the 30 n-type layer 35 down to the i-type layer 32 in the portion surrounding an active region (a light receiving region in the case of the photo-detector) in which a current flows. Now, in a case in which the region 39 is formed of a p-type semiconductor, an n-p-n structure is formed to extend along the layer 35 and a p-i-n structure is formed between the region 39 and the n-type layer 31, so that when a voltage is applied to a manner so as to make the potential of the electrode 38 positive relative to the electrode 37, substantially no 35 current flows outside the active region. Further, when the region 39 is formed of a semi-insulating semiconductor, there is no appreciable current flow through the region 39 naturally. That is, a current centres only to the active region inside the region 39, and the electrostatic capacitance also takes a value which is dependent substantially upon the area of the active region. With this structure, the p-type layer which forms the barrier in the active region is not exposed to the outside, and hence it is not affected by the 40 outside, resulting in reduced leakage current and stabilized operation. In other words, the introduction of the region 39 ensures the provision of a planar type device which is identical in operation with the mesa type device and stable and high in performance.
Example 4
Next, a description will be given of another embodiment of the present invention. In the abovesaid
Example 3, the carrier concentration of the n-type layer 35 is relatively high, so that if the region 39 is formed as a p-type region, the breakdown voltage of the pn junction between it and the layer 35 may sometimes be low and, in this case, there is the possibility ofcurrent flow though the n-p-n structure along the layer 35.
This, example has a structure for preventing such a leakage current. Figure 7 shows its cross-sectional view. 50 Reference numeral 40 indicates an n'-GaAs substrate; 41 designates an n- GaAs layer (n=l 011CM-3 and a thickness of about 1 pm); 42 identifies an i-GaAs layer (p- 51014CM-3 and a thickness of about 2 um); 43 denotes a p-GaAs layer (p=l 018CM -3 and a thickness of about 100 k 44 represents an i-GaAs layer (p 51014CM-3 and a thickness of about 1000 k 45 shows an n-GaO.8A0.2As layer (p1015cm-3 and a thickness of about 1 tm); 46 refers to an annular n-GaAs layer (n- 1018CM3 and a thickness of about 1 lim) 55 forfacilitating the connection to the corresponding electrode; 47 signifies an insulating film; 48 and 49 indicate electrodes; and 50 designates an annular region formed of a ptype or semi-insulating semiconductor to extend from the layer 45 down to the layer 42 around the active region. Since the n-type layer 45 is formed of the Gao.8A1,0.2As of larger energy gap than the GaAs and has a low carrier concentration, even if the region 50 is formed of a p'-type semiconductor, its breakdown voltage can be 60 made large and, consequently, substantially no current flows through the region 50 regardless of its acceptor concentration.
Incidentally, in a case in which the regions 49 and 50 are formed of the p-type semiconductor in Examples 3 and 4, it is also possible to attach electrodes thereto so that a voltage can be applied to provide a reverse-biased condition between the region 49 and the layer 45, or between the region 50 and the layer 45.65 4 GB 2 132 016 A 4 In this case, the potential barrier at the vicinity portion of the active region becomes higher than the potential barrier atthe central portion, reducing the value of a current flowing through the vicinity portion.
While the GaAs is employed as the material of the semiconductor element in the foregoing, mixed crystals, such as for example, GaAtAs, InGaAsP, InGaAtAs and so forth, can also be used. Further, it is possible not only to produce the n-i-p-i-n device with a material of a single composition but also to fabricate an n-i-p-i-n device of a hetero structure through using materials of different compositions. Moreover, the above-described structures are also applicable to a p-i-n-i-p device with reverse conduction types.
Since such structures can be formed by using a molecular beam epitaxial growth method for crystal growth and an ion implantation or impurity diffusion method for the annular region, the device of the present invention can easily be produced by conventional manufacturing methods.

Claims (6)

1. A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration of more than 1 017 cm-', a second semi- conductor layer having a carrier concentration of less than 1016CM-3, a third semi-conductor layer having a carrier concentration of more than 1017CM-3 and a thickness of less than 300 k a fourth semiconductor layer having a carrier concentration of less than 1011CM-3 and a fifth semiconductor layer having a carrier concentration of more than 1017 cm-3 and, in which the first and fifth semiconductor layers are of the same conductivity type and the third semiconductor layer is different in conductivity type from that of the fifth semiconductor layer, wherein the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers.
2. A semiconductor device according to claim 1, wherein the energy gaps of the first and fifth semiconductor layers are larger than the energy gaps of the second and fourth semiconductor layers.
3. A semiconductor device according to claim 1, wherein the first semiconductor layer is formed by two 25 semiconductor layers of different energy gaps, of which that layer having the larger energy gap, is less than 1000 A thick and is in contact with the second semiconductor layer.
4. A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration of more than 1017CM-3, a second semiconductor layer having a carrier concentration of less than 1011 CM-3 a third semiconductor layer having a carrier concentration of more than 30 1017 cm-3, and a thickness of less than 300 A, a fourth semiconductor layer having a carrier concentration of lessthan 1016CM-3 and a fifth semiconductor layer having a carrier concentration of more than 1017 CM-3, and in which the first and fifth semiconductor layers are the same in conductivity type while the third semiconductor layer is different in conductivity type from that of the fifth semiconductor layer, wherein an annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer is formed around an active region to extend from the fifth semiconductor layerto the second semiconductor.
5. A semiconductor device with reference to any of Examples 1 to 4.
6. A semiconductor device substantially as herein described with reference to Figures 2 and 3,4 and 5, 4() 6A and 6B or 7 of the accompanying drawings.
Printed for Her Majesty's Stationery Office, by Croydon Printing Company Limited, Croydon, Surrey, 1984. Published by The Patent Office, 25 Southampton Buildings, London, WC2A lAY, from which copies may be obtained.
i - I.
GB08332597A 1982-12-07 1983-12-07 A semiconductor device Expired GB2132016B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57213301A JPS59104177A (en) 1982-12-07 1982-12-07 Semiconductor element
JP57213302A JPS59104178A (en) 1982-12-07 1982-12-07 Semiconductor element

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GB8332597D0 GB8332597D0 (en) 1984-01-11
GB2132016A true GB2132016A (en) 1984-06-27
GB2132016B GB2132016B (en) 1986-06-25

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GB2221091A (en) * 1988-07-22 1990-01-24 Gen Electric Co Plc Semiconductor planar doped barrier device

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GB8332597D0 (en) 1984-01-11
US4682196A (en) 1987-07-21

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