GB2127642B - Programmable memory circuit - Google Patents

Programmable memory circuit

Info

Publication number
GB2127642B
GB2127642B GB08324782A GB8324782A GB2127642B GB 2127642 B GB2127642 B GB 2127642B GB 08324782 A GB08324782 A GB 08324782A GB 8324782 A GB8324782 A GB 8324782A GB 2127642 B GB2127642 B GB 2127642B
Authority
GB
United Kingdom
Prior art keywords
memory circuit
programmable memory
programmable
circuit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08324782A
Other languages
English (en)
Other versions
GB2127642A (en
GB8324782D0 (en
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB8324782D0 publication Critical patent/GB8324782D0/en
Publication of GB2127642A publication Critical patent/GB2127642A/en
Application granted granted Critical
Publication of GB2127642B publication Critical patent/GB2127642B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
GB08324782A 1982-09-17 1983-09-15 Programmable memory circuit Expired GB2127642B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57161861A JPS5952497A (ja) 1982-09-17 1982-09-17 デコ−ダ回路

Publications (3)

Publication Number Publication Date
GB8324782D0 GB8324782D0 (en) 1983-10-19
GB2127642A GB2127642A (en) 1984-04-11
GB2127642B true GB2127642B (en) 1986-03-12

Family

ID=15743349

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08324782A Expired GB2127642B (en) 1982-09-17 1983-09-15 Programmable memory circuit

Country Status (3)

Country Link
US (2) US4583205A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5952497A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2127642B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
GB2146502B (en) * 1983-08-31 1987-07-01 Nat Semiconductor Corp Internal high voltage (vpp) rise control circuit
US4675673A (en) * 1984-01-27 1987-06-23 Oliver Douglas E Programmable pin driver system
JPS60253319A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd Ｃ−ｍｏｓ論理回路
JPH0746514B2 (ja) * 1984-08-17 1995-05-17 日本電気株式会社 デコーダ回路
DE3586493T2 (de) * 1984-12-28 1993-01-14 Nippon Electric Co Nichtfluechtige halbleiterspeicheranordnung.
JPH0746515B2 (ja) * 1984-12-28 1995-05-17 日本電気株式会社 デコ−ダ回路
JPS63153799A (ja) * 1986-08-08 1988-06-27 Nec Corp 半導体メモリ
JPS6361497A (ja) * 1986-08-25 1988-03-17 テキサス　インスツルメンツ　インコ−ポレイテツド ポンプ式通過ゲ−トを備えた高速高電圧デコ−ダ
US4758744A (en) * 1986-11-26 1988-07-19 Rca Corporation Decoder circuitry with reduced number of inverters and bus lines
JPS63201990A (ja) * 1987-02-17 1988-08-22 Matsushita Electronics Corp 半導体記憶装置
US4849875A (en) * 1987-03-03 1989-07-18 Tandon Corporation Computer address modification system with optional DMA paging
US4891752A (en) * 1987-03-03 1990-01-02 Tandon Corporation Multimode expanded memory space addressing system using independently generated DMA channel selection and DMA page address signals
JPH02500224A (ja) * 1987-08-10 1990-01-25 タンドン　コーポレーション コンピュータ・アドレス変換装置を備えたコンピュータ・システム
US5101339A (en) * 1987-08-10 1992-03-31 Tandon Corporation Computer address modification system using writable mapping and page stores
JPH081759B2 (ja) * 1987-11-24 1996-01-10 株式会社東芝 不揮発性メモリ
DE3888294T2 (de) * 1987-11-25 1994-06-23 Nippon Electric Co Eingangsschaltung, die in eine Halbleiteranlage eingegliedert ist.
JPH023187A (ja) * 1988-06-09 1990-01-08 Toshiba Corp 不揮発性半導体メモリ
US4885481A (en) * 1988-06-17 1989-12-05 Honeywell Inc. Configurable memory address decoder for integrated memory circuits with auxiliary memory locations
GB2226727B (en) * 1988-10-15 1993-09-08 Sony Corp Address decoder circuits for non-volatile memories
JP2569777B2 (ja) * 1988-12-16 1997-01-08 日本電気株式会社 入力信号切り換え回路
US4954731A (en) * 1989-04-26 1990-09-04 International Business Machines Corporation Wordline voltage boosting circuits for complementary MOSFET dynamic memories
US5021680A (en) * 1989-07-31 1991-06-04 Advanced Micro Devices, Inc. Voltage supply circuit for programming circuits of programmable logic arrays
JP3006014B2 (ja) * 1990-02-13 2000-02-07 日本電気株式会社 半導体メモリ
US5287536A (en) * 1990-04-23 1994-02-15 Texas Instruments Incorporated Nonvolatile memory array wordline driver circuit with voltage translator circuit
JP2977321B2 (ja) * 1991-05-20 1999-11-15 株式会社東芝 マルチプレクサ
JPH0612900A (ja) * 1992-06-29 1994-01-21 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3151329B2 (ja) * 1993-04-07 2001-04-03 株式会社東芝 データ出力回路
US5332929A (en) * 1993-04-08 1994-07-26 Xilinx, Inc. Power management for programmable logic devices
US5914906A (en) * 1995-12-20 1999-06-22 International Business Machines Corporation Field programmable memory array
EP0809254B1 (en) * 1996-05-24 2003-10-15 STMicroelectronics S.r.l. Line decoder for memory devices
CN1295363C (zh) * 2005-03-16 2007-01-17 深圳市伟雄机械设备有限公司 贵金属的无毒萃取提炼方法
US9564205B2 (en) * 2014-11-13 2017-02-07 Winbond Electronics Corp. Memory apparatus and method for accessing memory

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594736A (en) * 1968-11-29 1971-07-20 Motorola Inc Mos read-write system
US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
JPS6025836B2 (ja) * 1978-05-24 1985-06-20 株式会社日立製作所 半導体不揮発性メモリ
US4264828A (en) * 1978-11-27 1981-04-28 Intel Corporation MOS Static decoding circuit
JPS5828680B2 (ja) * 1979-04-27 1983-06-17 富士通株式会社 半導体記憶装置
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
JPS57100686A (en) * 1980-12-12 1982-06-22 Toshiba Corp Nonvolatile semiconductor memory
JPS6035760B2 (ja) * 1980-12-18 1985-08-16 富士通株式会社 半導体記憶装置
JPS6042554B2 (ja) * 1980-12-24 1985-09-24 富士通株式会社 Ｃｍｏｓメモリデコ−ダ回路
JPS57143795A (en) * 1981-03-03 1982-09-06 Toshiba Corp Nonvolatile semiconductor storage device
JPS5812679B2 (ja) * 1981-10-12 1983-03-09 日本電気株式会社 不揮発性絶縁ゲ−ト半導体メモリの周辺回路方式
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路

Also Published As

Publication number Publication date
GB2127642A (en) 1984-04-11
US4583205A (en) 1986-04-15
US4697106A (en) 1987-09-29
GB8324782D0 (en) 1983-10-19
JPS6314437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-03-30
JPS5952497A (ja) 1984-03-27

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years