GB2106419B - Growth of structures based on group iv semiconductor materials - Google Patents

Growth of structures based on group iv semiconductor materials

Info

Publication number
GB2106419B
GB2106419B GB08228109A GB8228109A GB2106419B GB 2106419 B GB2106419 B GB 2106419B GB 08228109 A GB08228109 A GB 08228109A GB 8228109 A GB8228109 A GB 8228109A GB 2106419 B GB2106419 B GB 2106419B
Authority
GB
United Kingdom
Prior art keywords
growth
group
semiconductor materials
structures based
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08228109A
Other languages
English (en)
Other versions
GB2106419A (en
Inventor
Harry John Leamy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2106419A publication Critical patent/GB2106419A/en
Application granted granted Critical
Publication of GB2106419B publication Critical patent/GB2106419B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08228109A 1981-02-04 1982-01-21 Growth of structures based on group iv semiconductor materials Expired GB2106419B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23123881A 1981-02-04 1981-02-04

Publications (2)

Publication Number Publication Date
GB2106419A GB2106419A (en) 1983-04-13
GB2106419B true GB2106419B (en) 1984-08-15

Family

ID=22868346

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08228109A Expired GB2106419B (en) 1981-02-04 1982-01-21 Growth of structures based on group iv semiconductor materials

Country Status (9)

Country Link
US (1) US4670086A (en:Method)
EP (1) EP0070878B1 (en:Method)
JP (1) JPS58500048A (en:Method)
CA (1) CA1204044A (en:Method)
DE (1) DE3231671T1 (en:Method)
GB (1) GB2106419B (en:Method)
IT (1) IT1149534B (en:Method)
NL (1) NL8220051A (en:Method)
WO (1) WO1982002726A1 (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191503A3 (en) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
JPH084067B2 (ja) * 1985-10-07 1996-01-17 工業技術院長 半導体装置の製造方法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JPH08973B2 (ja) * 1986-03-31 1996-01-10 キヤノン株式会社 堆積膜形成法
AU623861B2 (en) * 1987-08-08 1992-05-28 Canon Kabushiki Kaisha Crystal article, method for producing the same and semiconductor device utilizing the same
US4944835A (en) * 1989-03-30 1990-07-31 Kopin Corporation Seeding process in zone recrystallization
US4988641A (en) * 1989-10-10 1991-01-29 Grumman Aerospace Corporation Graphotaxially forming a photosensitive detector array
JP2785918B2 (ja) * 1991-07-25 1998-08-13 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
JPH076960A (ja) * 1993-06-16 1995-01-10 Fuji Electric Co Ltd 多結晶半導体薄膜の生成方法
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
US6478773B1 (en) * 1998-12-21 2002-11-12 Micrus Corporation Apparatus for deployment of micro-coil using a catheter
DE19845792A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Verfahren zur Erzeugung einer amorphen oder polykristallinen Schicht auf einem Isolatorgebiet
US7585792B2 (en) * 2005-02-09 2009-09-08 S.O.I.Tec Silicon On Insulator Technologies Relaxation of a strained layer using a molten layer
US7402517B2 (en) * 2005-03-31 2008-07-22 Battelle Memorial Institute Method and apparatus for selective deposition of materials to surfaces and substrates
CN102776566A (zh) * 2011-05-11 2012-11-14 深圳光启高等理工研究院 基于多晶硅的超材料制备方法和基于多晶硅的超材料

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389022A (en) * 1965-09-17 1968-06-18 United Aircraft Corp Method for producing silicon carbide layers on silicon substrates
US3413157A (en) * 1965-10-21 1968-11-26 Ibm Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3984173A (en) * 1974-04-08 1976-10-05 Texas Instruments Incorporated Waveguides for integrated optics
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4308078A (en) * 1980-06-06 1981-12-29 Cook Melvin S Method of producing single-crystal semiconductor films by laser treatment
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas

Also Published As

Publication number Publication date
EP0070878A4 (en) 1983-06-15
GB2106419A (en) 1983-04-13
EP0070878A1 (en) 1983-02-09
JPH0562451B2 (en:Method) 1993-09-08
IT8219393A0 (it) 1982-02-02
JPS58500048A (ja) 1983-01-06
WO1982002726A1 (en) 1982-08-19
EP0070878B1 (en) 1987-05-13
NL8220051A (nl) 1983-01-03
CA1204044A (en) 1986-05-06
DE3231671T1 (de) 1983-02-24
DE3231671C2 (en:Method) 1992-10-01
IT1149534B (it) 1986-12-03
US4670086A (en) 1987-06-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010121