GB2079481B - Method for the formation of surface relief patterns using deep ultraviolet radiation exposure of resist composition - Google Patents

Method for the formation of surface relief patterns using deep ultraviolet radiation exposure of resist composition

Info

Publication number
GB2079481B
GB2079481B GB8120305A GB8120305A GB2079481B GB 2079481 B GB2079481 B GB 2079481B GB 8120305 A GB8120305 A GB 8120305A GB 8120305 A GB8120305 A GB 8120305A GB 2079481 B GB2079481 B GB 2079481B
Authority
GB
United Kingdom
Prior art keywords
formation
ultraviolet radiation
resist composition
radiation exposure
deep ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8120305A
Other languages
English (en)
Other versions
GB2079481A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2079481A publication Critical patent/GB2079481A/en
Application granted granted Critical
Publication of GB2079481B publication Critical patent/GB2079481B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
GB8120305A 1980-07-03 1981-07-01 Method for the formation of surface relief patterns using deep ultraviolet radiation exposure of resist composition Expired GB2079481B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16575980A 1980-07-03 1980-07-03

Publications (2)

Publication Number Publication Date
GB2079481A GB2079481A (en) 1982-01-20
GB2079481B true GB2079481B (en) 1984-05-02

Family

ID=22600342

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8120305A Expired GB2079481B (en) 1980-07-03 1981-07-01 Method for the formation of surface relief patterns using deep ultraviolet radiation exposure of resist composition

Country Status (6)

Country Link
JP (1) JPS5745239A ( )
DE (1) DE3125572A1 ( )
FR (1) FR2486259A1 ( )
GB (1) GB2079481B ( )
IT (1) IT1138814B ( )
SE (1) SE8104133L ( )

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
DE3234301A1 (de) * 1982-09-16 1984-03-22 Merck Patent Gmbh, 6100 Darmstadt Neue bisazidoverbindungen, diese enthaltende lichtempfindliche zusammensetzungen und verfahren zur erzeugung von reliefstrukturen
DE3337315A1 (de) * 1982-10-13 1984-04-19 Tokyo Ohka Kogyo Co., Ltd., Kawasaki, Kanagawa Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten
JPS60107644A (ja) * 1983-09-16 1985-06-13 フイリツプ　エイ．ハント　ケミカル　コ−ポレ−シヨン 現像しうる水性ネガレジスト組成物
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
JPH02254450A (ja) * 1989-03-29 1990-10-15 Toshiba Corp レジスト
DE4018427A1 (de) * 1990-06-14 1992-01-16 Samsung Electronics Co Ltd Fotolitographie-verfahren zur ausbildung eines feinlinigen musters

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1597614B2 (de) * 1967-07-07 1977-06-23 Hoechst Ag, 6000 Frankfurt Lichtempfindliche kopiermasse
US3923522A (en) * 1973-07-18 1975-12-02 Oji Paper Co Photosensitive composition
JPS5140452B2 ( ) * 1973-07-23 1976-11-04
JPS5934293B2 (ja) * 1977-04-20 1984-08-21 王子製紙株式会社 感光性組成物
DE2948324C2 (de) * 1978-12-01 1993-01-14 Hitachi, Ltd., Tokio/Tokyo Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern
JPS5677843A (en) * 1979-11-30 1981-06-26 Fujitsu Ltd Resist pattern forming method
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern

Also Published As

Publication number Publication date
GB2079481A (en) 1982-01-20
FR2486259A1 (fr) 1982-01-08
JPS5745239A (en) 1982-03-15
SE8104133L (sv) 1982-01-04
DE3125572A1 (de) 1982-07-29
IT1138814B (it) 1986-09-17
IT8122524A0 (it) 1981-06-23

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20010630