GB2078460B - Mos memory cell - Google Patents

Mos memory cell

Info

Publication number
GB2078460B
GB2078460B GB8127121A GB8127121A GB2078460B GB 2078460 B GB2078460 B GB 2078460B GB 8127121 A GB8127121 A GB 8127121A GB 8127121 A GB8127121 A GB 8127121A GB 2078460 B GB2078460 B GB 2078460B
Authority
GB
United Kingdom
Prior art keywords
memory cell
mos memory
mos
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8127121A
Other languages
English (en)
Other versions
GB2078460A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of GB2078460A publication Critical patent/GB2078460A/en
Application granted granted Critical
Publication of GB2078460B publication Critical patent/GB2078460B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
GB8127121A 1980-01-31 1980-05-05 Mos memory cell Expired GB2078460B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/117,223 US4308594A (en) 1980-01-31 1980-01-31 MOS Memory cell

Publications (2)

Publication Number Publication Date
GB2078460A GB2078460A (en) 1982-01-06
GB2078460B true GB2078460B (en) 1982-12-08

Family

ID=22371629

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8127121A Expired GB2078460B (en) 1980-01-31 1980-05-05 Mos memory cell

Country Status (8)

Country Link
US (1) US4308594A (enExample)
JP (1) JPS5914830B2 (enExample)
CA (1) CA1170363A (enExample)
DE (1) DE3050249C2 (enExample)
FR (1) FR2475266B1 (enExample)
GB (1) GB2078460B (enExample)
NL (1) NL8020509A (enExample)
WO (1) WO1981002217A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713872B2 (ja) * 1987-11-24 1995-02-15 三菱電機株式会社 半導体記憶装置
JPH0668675A (ja) * 1992-08-21 1994-03-11 Takayama:Kk メモリデバイス
JPH09162304A (ja) * 1995-12-12 1997-06-20 Mitsubishi Electric Corp 半導体記憶装置
US6078513A (en) * 1999-06-09 2000-06-20 Neomagic Corp. NMOS dynamic content-addressable-memory CAM cell with self-booting pass transistors and local row and column select
ITMI20021486A1 (it) * 2002-07-05 2004-01-05 St Microelectronics Srl Dispositivo elevatore di tensione e sistema di memoria
US7027326B2 (en) * 2004-01-05 2006-04-11 International Business Machines Corporation 3T1D memory cells using gated diodes and methods of use thereof
US8324667B2 (en) 2004-01-05 2012-12-04 International Business Machines Corporation Amplifiers using gated diodes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3744037A (en) * 1971-10-04 1973-07-03 North American Rockwell Two-clock memory cell
US3878404A (en) * 1972-10-30 1975-04-15 Electronic Arrays Integrated circuit of the MOS variety
US3876993A (en) * 1974-03-25 1975-04-08 Texas Instruments Inc Random access memory cell
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US4091460A (en) * 1976-10-05 1978-05-23 The United States Of America As Represented By The Secretary Of The Air Force Quasi static, virtually nonvolatile random access memory cell
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM

Also Published As

Publication number Publication date
JPS5914830B2 (ja) 1984-04-06
FR2475266B1 (enExample) 1985-01-18
JPS57500038A (enExample) 1982-01-07
DE3050249T1 (de) 1982-04-22
US4308594A (en) 1981-12-29
FR2475266A1 (enExample) 1981-08-07
NL8020509A (enExample) 1981-12-01
WO1981002217A1 (en) 1981-08-06
DE3050249C2 (de) 1986-05-15
CA1170363A (en) 1984-07-03
GB2078460A (en) 1982-01-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee