GB2060257A - Guard rings for avalanche photo diodes - Google Patents
Guard rings for avalanche photo diodes Download PDFInfo
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- GB2060257A GB2060257A GB8031240A GB8031240A GB2060257A GB 2060257 A GB2060257 A GB 2060257A GB 8031240 A GB8031240 A GB 8031240A GB 8031240 A GB8031240 A GB 8031240A GB 2060257 A GB2060257 A GB 2060257A
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- 239000004065 semiconductor Substances 0.000 claims description 72
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- Microelectronics & Electronic Packaging (AREA)
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Description
1 GB 2 060 257 A 1
SPECIFICATION Avalanche Photo Diode
This invention relates to an avalanche photo diode provided with a hetero junction, and more particularly to improvements in a guard ring structure provided for the purpose of preventing a 5 breakdown at the peripheral portion of a photo detecting region.
Of various semiconductor photo detectors, an avalanche photo diode (hereinafter referred to simply as---APW)is a photo detector having characteristics of high sensitivity and wide band, and is widely employed in optical communications.
The API) performs amplification of a photocurrent by applying a reverse bias voltage to its pn junction to cause an avalanche multiplication under a high electric field. This develops a defect such that before the avalanche multiplication of the photocurrent occurs, electric fields centre on the peripheral portion of the photo detecting region to cause a breakdown there.
To remove the abovesaid defect of the prior art, there has been proposed an API) in which a ringshaped layer, commonly referred to as a guard ring, is provided to surround the photo detecting region, such as a single-element APID made of Germamium (Ge) or Silicon (Si). However, a sufficient increase in 15 the breakdown voltage cannot be attained by the provision of the conventional guard ring.
In view of the abovesaid defects of the prior art, an object of the present invention is to provide an avalanche photo diode in which the portion of the guard ring having a large curvature is formed in a semiconductor of a large band gap to provide for an increased breakdown voltage for preventing the breakdown.
In accordance with the present invention, there is provided an avalanche photo diode, comprising a guard ring around a photo detecting region having a pn junction, a semiconductor layer of said photo detecting region having the pn junction, being different in conductivity type from a semiconductor of the guard ring, said semiconductor layer being composed of a first semiconductor layer formed in contact with a semiconductor layer of the photo detecting region of the same conductivity type as the 25 semiconductor of the guard ring, and a second semiconductor layer formed in contact with the first semiconductor layer and having a larger band gap than the first semiconductor layer, the tip end of the guard ring extending down into the second semiconductor layer.
In accordance with a further aspect of the present invention, there is also provided an avalanche photo diode, comprising a uniformly thick, first semiconductor layer forming a photo detecting region 30 and a second semiconductor layer forming a first pn junction between the second semiconductor and the first semiconductor layer, third and fourth semiconductor layers of the same composition, respectively having larger band gaps than those of the first and second semiconductor layers and being formed so as to form therebetween a second pn junction which extends from the said first pn junction to surround the peripheral portion of the first semiconductor layer.
Embodiments of the present invention will be described in more detail below by way of example and by comparison with conventional devices with reference to the accompanying drawings, in which:
Figs. 1 A and 1 B are respectively perspective and cross-sectional views showing an example of a conventional avalanche photo diode; Figs. 2, 3 and 4 are cross-sectional views illustrating respectively, embodiments of the present 40 invention; Figs. 5A and 513 are respectively a perspective view and a sectional view showing another example of a conventional APD structure; Figs. 6, 7, 8 and 9 are sectional views illustrating respectively, embodiments of the present invention; and Figs. 1 OA, 1 OB, 1 OC, 1 OD, 1 OE, 11 A, 11 B, 11 C, 11 D, 11 E and 11 F are sectional views explanatory of a method of manufacture for the avalanche photo diode of the present invention.
To aid understanding of this invention, an example of a conventional device will first be described.
Fig. 1 A shows a perspective view of a section of such a conventional device and Fig. 1 B its cross- sectional view. In Figs. 1 A and 1 B, reference numeral 1 indicates a high concentration n type semiconductor substrata; 2 designates a low concentration n type semiconductor layer; 3 identifies a photo detecting region of a high concentration p type semiconductor, which forms a pn junction between it and the low concentration n type semiconductor layer 2; 4 denotes a guard ring of a p type semiconductor; 5 represents an insulator; and 6 and 7 show electrode metals. In this prior art device; the carrier concentration in the guard ring 4 is selected to be lower than the carrier concentration in the 55 photo detecting region 3 to reduce the electric field in the guard ring 4 so that no breakdown occurs around the photo detecting region during multiplication of the photo- current. The guard ring 4 is formed by diffusing means.
On the other hand, a 1 to 1.7 pm wavelength band has recently been taken notice of as an effective band for optical communication and, as an AP1) for use in this band, a quaternary or ternary 60 API) has been produced which is represented by a compositional equation, In,,Ga.AsP1-, (0.42y:5x:!50.5y, 0<y:51). In this lnl-XGa,,Asypl-, system, there is still left unsolved the problem that the breakdown is liable to occur around the photo detecting region; as a solution to this problem, it is has been proposed that a guard ring as in the prior art example shown in Figs. 1 A and 1 B be provided.
2 GB 2 060 257 A 2 In the In,-.Ga.AsP1-, system, however, a p type region of low concentration is very difficult to form by the same diffusion method as employed in the past; namely, no sufficient difference in the carrier concentration is provided between the photo detecting region and the guard ring so that electric fields centre on the guard ring, in particular, a portion of large curvature to cause a breakdown.
Embodiments of the present invention will now be described in more detail.
Fig. 2 illustrates, in section, an APID produced in accordance, with one embodiment of the present invention. Reference numeral 17 indicates an n'InP substrate; 18 refers to an n-lnl-PGapAs q pl-q (0.42q:5p:50.50q, 0<q:51) layer (a second semiconductor layer); 19 identifies an n-in,-.Ga. AsPl-y (0.42y:5x:50.50y, 0:!y:!5;1) layer (a first semiconductor layer); 20 denotes a p±Inj-,Ga,AsyP1-, layer, which is a photo detecting layer which forms a pn junction between it and the layer 19; 21 and 22 represent a guard ring formed of a p type semiconductor; 5 shows an insulator; and 6 and 7 refer to metal electrodes. The guard ring 21, 22 will be described in more detail. The portion 21 is formed by a p type semiconductor of the same composition as the layer 19, represented by p-inl-,,Ga,,Asyp 1-Y, and the portion 22 is formed by a p type semiconductor of the same composition as the layer 18, represented by p-1n,-PGapAs,P,-q. Reference numeral 25 indicates large- curvature portions of the guard ring. A feature of the present embodiment resides in that the band gap of the layer 18 is larger than the band gap of the layer 19 and in that the p type region forming the guard ring is formed to extend into the layer 18 so that the large-curvature portions 25 of the guard ring lie in the layer 18.
It is known that a semiconductor of a larger.band gap usually has a higher breakdown voltage than a semiconductor of a smaller band gap if the other conditions are the same. Accordingly, as compared with the prior art example in which the guard ring is formed only in the semiconductor of the same composition as the photo detecting region, a structure in which the guard ring extends into the semiconductor of a large band gap has a large breakdown voltage in the large-curvature portion 25 of the guard ring as in the present embodiment and hence is capable of effectively preventing the breakdown.
Next, a description will be given of the method of making the present embodiment. The nIn,-PGaPASqP,-, (0.42 q:5p:50.50q, 0:5q<l) layer 18 and the n-ln,-xGa,,As,P,-, (0.42y<x<0.50y, 0:5Y:5 1) layer 19 are sequentially grown on the n'-InIP substrate 17 by the liquid phase epitaxial method. In this case, the band gap of the Iril-PGapAs q P1-, layer 18 is made larger than the band gap of the In 1,Ga.Asypl-Y layer 19. Next, a S102 film which will ultimately serve as the insulator 5 is deposited by for example, sputtering or chemical vapour deposition on the wafer. Thereafter, the SiO, film overlying the area where the guard ring is to be formed is removed by photolithographic technique, and Zn is thermally diffused into the wafer using the S'02 film as a mask, thereby to form the guard rings 21, 22. After this, the SIO, film overlying the area in which the photo detecting region is to be formed is also removed by photolithographic technique, and then Zn is thermally diffused into the wafer to provide the photo detecting region using the remaining SiO, film serving as a mask. The thermal diffusions are so controlled as to cause the tip end or the botton of the guard ring to lie in the In,-PGapAs,Pl, layer 18 and the pn junction of the photo detecting region to lie in the,inl-,Ga,AsYP,-, layer 19 after completion of the thermal diffusions. Then, after a S'02 film is deposited again on the wafer to form an anti-reflecting coating, the S'02 film overlying the guard ring portion is etched away to 40 provide a site for attachment of an upper electrode. An upper electrode 6 is formed by vacuum deposition and photolithographic technique. Next, after polishing the underside of the InP substrate 17, a lower electrode 7 is formed by vacuum vapour deposition. Finally, the electrodes are subjected to heat treatment, thus providing an APID in the complete form.
Another embodiment of the present invention will be described next. In the embodiment of Fig. 2, 45 the guard ring 21, 22 is formed of semiconductors of different band gaps, but the guard ring may also be formed of semiconductors of the same composition. In this case, it is necessary that the band gap of the semiconductor forming the guard ring is larger than the band gap of the semiconductor adjoining the guard ring. Fig. 3 shows in section and APID of this embodiment. A method for the manufacture of the APID of this embodiment will be described, by way of example in which guard ring is formed by the crystal growth method. The n-in, pq -q -PGa As P,(0.42q:!p:-0.50q, 0:q:51) layer 18 and the n- <0.50y, 0: In,-.Ga.AsyPl-y (0.42y:5X= _y:5 1) layer 19 are sequentially grown on the nl-lnP substrate 17 by the liquid phase epitaxial method. In this case, the band gap of the In,- PGapAsqPl-q layer is made larger than the band gap of the In,,Ga.,Asy1P1-, layer. Next, a S'02 film is deposited by, for example, sputtering or chemical vapour deposition on the wafer. Thereafter, the SiO, film overlying the area in which the guard ring is to be formed is removed by photolithographic technique, and the layers 18 and 19 are selectively removed using the S'02 film used as a mask to form a groove extending down into the layer 18, and then a p-Inj-1GalAs,Pl, (0.42m:1:50.50m., 0:5mS 1) layer 27 is selectively grown in the groove to form the guard ring. The band gap of the In,_,Ga,As P,,, forming the guard ring is made larger than the band gaps of the layers 18 and 19. Following this, the SiO, film overlying the area in 60 which the photo detecting region is to be formed is removed by photolithographic technique, and then Zn is thermally diffused into the wafer to provide the photo-detecting region using the S'02 film serving as a mask. Then, after the formation of an anti-reflecting coating, electrodes are formed and heat treated to provide an APID in the complete form.
Fig. 4 illustrates another embodiment of the present invention, in which, in order to raise the 65 V.
Q 3 GB 2 060 257 A 3 quantum efficiency, an In,,Ga,,As.,P,, layer (0.42n:Sm:50.50n, 0:5n:51) 26 of a semiconductor having a larger band gap than the layer 19 is formed on the top of the layer 19 which performs photo detection in the APD shown in Fig. 2.
In the following, another type of the avalanche photo diode will be described. Figs. 5A and 513 show the basic construction of a conventional APID explanatory of the peripheral portion of the photo detecting region in which the abovesaid breakdown occurs, 5A being a perspective view of a one-half structure of the diode and 513 its sectional view. In Figs. 5A and 513, reference numeral 1 indicates a high concentration n type semiconductor substrate; 2 designates a low concentration n type semiconductor layer; 3 identifies a photo detecting region of a high concentration p type semiconductor; which forms a pn junction between it and the low concentration n type semiconductor 10 layer 2; 5 denotes an insulator; and 6 and 7 represent metal electrodes. In Figs. 5A and 513, the part identified by 8 is that part of the photo detecting region where the undesirable breakdown occurs and the curvature of the pn junction is large.
Fig. 6 illustrates, in section, an APID of this type produced in accordance with an embodiment of the present invention. Reference numeral 17 indicates an n±InP substrate; 19 indicates an n- lnl-XGaxAsypl-y (0.42y:5x:50.50y, 0:5y:51) layer; 20 identifies a p-lnl- xGa,,AsyPl-y layer; 13 denotes a pn junction defined by the layers 19 and 20 and serving as a photo detecting region; 14 represents a p lnl-PGa q AsPIP,-, (0.42q:5p:50.50q, 0Sq<1) layer; 18 shows an n-Inl-PGa. ASqP,_. layer; 5 refers to an insulator; and 6 and 7 indicates metal electrodes. The band gaps of the lnl-PGapAsqpl-, layers 14 and 18 are selected larger than the band gaps of the lnl-XGa,,Asypl-y layers 19 and 20. The feature of the 20 present invention resides, as will be apparent from the comparison with the basic APID structure shown in Figs. 5A and 513, in that the portion of the photo detecting region where the curvature of the pn junction is large (identified by reference numeral 8 in Figs. 5A and 513 and reference numeral 29 in Fig.
6) is formed in the semiconductor of large band gap. It is known that a semiconductor of a larger band gap usually has a higher breakdown voltage than a semiconductor of a smaller band gap if the 25 other conditions are the same. Accordingly, in such a structure as in the embodiment of Fig. 6, a pn junction formed by the lnl-PGapAsqPl-q layers 14 and 18 has a larger breakdown voltage than the pn junction 13 formed by the In,,Ga,,Asypi-Y layers 19 and 20 serving as a photo detection region and hence essentially has the guard ring effect.
As will be appreciated from the above, the width of the layer 14, identified by 1 in Fig. 6 can be 30 freely selected so long as the condition that the large-curvature portion 29 of the pn junction is formed to extend between the layers 14 and 18 is satisfied.
According to the embodiment of Fig. 6, since the pn junction between the semiconductors of large band gaps is small in dark current, it is possible to produce the effect which reduces the dark current around the photo detecting region.
Next, another embodiment of the present invention will be described. In the embodiment of Fig.
7, the layer 19 is formed in the layer 18, and the configurations of the other layers and the object of the present embodiment are exactly the same as in the embodiment of Fig. 6.
Figs. 8 and 9 illustrate, as further embodiments of the present invention, APID structures capable of enhancing the quantum efficiency. Figs. 8 and 9 respectively correspond to the embodiments of 40 Figs. 6 and 7 and have in common an In,,Ga.. ASnP i-,, (0.42n:5m:50.50n, and 0<n:5 1) layer 26 of a semiconductor having a larger band gap than that of the layer 20 liformed on the-la-yer 20 which is the photo detecting region, being identical with the embodiments of Figs. 6 and 7 in other features.
In the case of making the avalanche photo diode of the embodiment of Fig. 6, as shown in Figs.
1 OA to 1 OE, the n-lnl-XGaxAsypl_y (0.42y:5x:50.50y, and 0:5y:5 1) layer 19 is grown by the liquid 45 epitaxial method on the n'-InP substrate 17, and then the S'02 film 5 is deposited by, for example the chemical vapour deposition method on the abovesaid layer as shown in Fig. 1 dA. The S'02 filM'S selectively removed, leaving the S102 film on the portion which will ultimately serve as the photo detecting region as shown in Fig. 1 OB, and then the In,,GaxAsylPl-Y layer 19 is selectively etched away, using the remaining SiO, film 5 as a mask as shown in Fig. 1 OC. After selectively growing the n- 50 lnl-PGapAsqpl-q (0.42q:5p:50.50q, and 0:5q:51) on the wafer, using the S102 film 5 as a mask as shown in Fig. 1 OD, the SiO2 film 5 is removed. Then, after the S'02 film 5 is again deposited, the Sj02 film overlying the photo detecting region and the surrounding regions are removed and Zn is diffused into the wafer to form the p-inl-XGa.Asypl-y layer 20 and the p-inl- PGapAsqpl-q layer 14 as shown in Fig. 1 OE. Thereafter, electrodes are attached to the assembly to complete the APD. The band gap of the 55 In,-PGapAs,P1-, layer 18 is selected larger than the band gap of the In,, Ga,,Asyll_y layer 19.
In the case of making the avalanche photo diode of the embodiment of Fig. 7, as depicted in Figs.
1 1A to 11 F, the n-Inl-PGapAs q Pl-q (0.42q:5p<0.50q, and 0Sq:51) layer 18 is grown by the liquid phase epitaxial method on the n'-InP substrate 17, and then a SIO, film 5 is deposited, for example by the chemical vapour deposition method on the above layer 18 as shown in Fig. 11 A. The SiO2 film on 60 the portion which will ultimately serve as the photo detecting region is selectively removed as shown in Fig. 11 B, and then the lnl-PGapAs q P l-q layer 18 is selectively etched away, using the remaining Si02 film 5 as a mask as shown in Fig. 11 C. After selectively growing the n- in,-.Ga.Asyp 1-Y (0.42y:5x:50.50y and 0<y:51) layer 19 on the wafer, using the S'02 film 5 as a mask as shown in Fig.
11 D, the SiQ, film 5 overlying the]nl-PGapAscPl-q layer 18 which surrounds the photo detecting 65 4 GB 2 060 257 A region is removed as shown in Fig. 11 E. Zn is diffused into the wafer, using the S'02 film 5 as a mask, to form the p-1n,-.Ga,,As,P,-, layer 20 and the p-lnl-,Ga,As,P1-, layer 14 as shown in Fig. 11 F.
Following this, electrodes are attached to the assembly to complete the APD. The band gap of the lnl-PGapAsqpl-q layer 18 is selected larger than the band gap of the lnl- XGa,,As,P1-, layer 20.
In the embodiments of Figs. 8 and 9, the S'02 film is entirely removed after selective growth, and 5 then the n-lnl-MGa,,iAs.Pl-n layer is formed on the grown layer, after which the electrodes are attached.
The above embodiments have been described in connection with APID's made of the InGaAsP mixed crystal; but since the point is to form a semiconductor layer of a large band gap in the peripheral portion of the photo detecting region and extend the pn junction of the photo detecting region into the 10 semiconductor layer of large band gap, a mixed crystal such as, for example, GaNAsSb can also be used. It is also possible, of course, to form the APID of semiconductors of different constituent elements. The conductivity types in the above may also be reversed.
As has been described in respect of the InGaMP system APD, according to the present invention, the guard ring effect can be obtained easily and effectively by forming, in the peripheral portion of the photo detecting region, a semiconductor layer having a larger band gap than that of the semiconductor layer forming the photo detecting region and by extending the pn junction of the photo detecting region into the semiconductor of the large band gap; accordingly, the present invention is of great industrial value.
Claims (4)
1. An avalanche photo diode, comprising a guard ring around a photo detecting region having a pn junction, a semiconductor layer of said photo detecting region having the pn junction, being different in conductivity type from a semiconductor of the guard ring, said semiconductor layer being composed of a first semicodductor layer formed in contact with a semiconductor layer of the photo detecting region of the same conductivity type as the semiconductor of the guard ring, and a second semiconductor layer formed in contact with the first semiconductor layer and having a larger band gap than the first semiconductor layer, the tip end of the guard ring extending down into the second semiconductor layer.
2. An avalanche photo diode according to claim 1, wherein the band gap of the semiconductor forming the guard ring is larger than the band gaps of the respective semiconductors of the first and 30 second semiconductor layers.
3. An avalanche photo diode, comprising a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between the second semiconductor and the first semiconductor layer; third and fourth semiconductor layers of the same composition, respectively having larger band gaps than those of the first and second semiconductor layers and being formed so as to form therebetween a second pn junction which extends from the said first pn junction to surround the peripheral portion of the first semiconductor layer.
4. An avalanche photo diode substantially as herein described with reference to and as illustrated in any of Figures 2 to 4 or any of Figures 6 to 9 with.or without reference to Figures 1 OA to 1 OE or 11 A 40 to 11 F of the accompanying drawings.
Printed for Her Majesty's Stationery Office by the Courier Press, Leamington Spa. 1981. Published by the Patent Office, Southampton Buildings, London, WC2A l AY, from which copies maybe obtained.
z W i
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12353079A JPS5646570A (en) | 1979-09-26 | 1979-09-26 | Avalanche photodiode |
| JP12889379A JPS5654080A (en) | 1979-10-08 | 1979-10-08 | Avalanche photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2060257A true GB2060257A (en) | 1981-04-29 |
| GB2060257B GB2060257B (en) | 1983-06-08 |
Family
ID=26460426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8031240A Expired GB2060257B (en) | 1979-09-26 | 1980-09-26 | Guard rings for avalanche photo diodes |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4383266A (en) |
| GB (1) | GB2060257B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0103084A2 (en) * | 1982-07-21 | 1984-03-21 | Siemens Aktiengesellschaft | Method of making a planar avalanche photodiode having a longwave sensitivity limit above 1.3 um |
| EP0304048A2 (en) * | 1987-08-19 | 1989-02-22 | Nec Corporation | A planar type heterostructure avalanche photodiode |
| US4943840A (en) * | 1985-11-29 | 1990-07-24 | Bbc Brown, Boveri & Company, Limited | Reverse-conducting thyristor |
| US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4442444A (en) * | 1980-07-08 | 1984-04-10 | Fujitsu Limited | Avalanche photodiodes |
| KR900000074B1 (en) * | 1981-10-02 | 1990-01-19 | 미쓰다 가쓰시게 | Beam-checking semiconductor apparatus |
| EP0205899B1 (en) * | 1985-05-20 | 1991-03-27 | Nec Corporation | Planar heterojunction avalanche photodiode |
| US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
| US5192993A (en) * | 1988-09-27 | 1993-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having improved element isolation area |
| JP3602242B2 (en) * | 1996-02-14 | 2004-12-15 | 株式会社ルネサステクノロジ | Semiconductor device |
| RU2654386C1 (en) * | 2016-12-27 | 2018-05-17 | Акционерное общество "НПО "Орион" | Method for manufacturing a planar avalanche photodiod |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| FR2252653B1 (en) * | 1973-11-28 | 1976-10-01 | Thomson Csf | |
| US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
| US4079405A (en) * | 1974-07-05 | 1978-03-14 | Hitachi, Ltd. | Semiconductor photodetector |
| US4127932A (en) * | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
| US4258375A (en) * | 1979-04-09 | 1981-03-24 | Massachusetts Institute Of Technology | Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication |
-
1980
- 1980-09-16 US US06/187,744 patent/US4383266A/en not_active Expired - Lifetime
- 1980-09-26 GB GB8031240A patent/GB2060257B/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0103084A2 (en) * | 1982-07-21 | 1984-03-21 | Siemens Aktiengesellschaft | Method of making a planar avalanche photodiode having a longwave sensitivity limit above 1.3 um |
| EP0103084A3 (en) * | 1982-07-21 | 1986-03-19 | Siemens Aktiengesellschaft | Method of making a planar heterostructure photodiode |
| US4943840A (en) * | 1985-11-29 | 1990-07-24 | Bbc Brown, Boveri & Company, Limited | Reverse-conducting thyristor |
| EP0304048A2 (en) * | 1987-08-19 | 1989-02-22 | Nec Corporation | A planar type heterostructure avalanche photodiode |
| EP0304048A3 (en) * | 1987-08-19 | 1990-05-23 | Nec Corporation | A planar type heterostructure avalanche photodiode |
| US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2060257B (en) | 1983-06-08 |
| US4383266A (en) | 1983-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19990926 |