GB2056771B - Crossunders for high density cmos/soj integrated circuits - Google Patents
Crossunders for high density cmos/soj integrated circuitsInfo
- Publication number
- GB2056771B GB2056771B GB8025630A GB8025630A GB2056771B GB 2056771 B GB2056771 B GB 2056771B GB 8025630 A GB8025630 A GB 8025630A GB 8025630 A GB8025630 A GB 8025630A GB 2056771 B GB2056771 B GB 2056771B
- Authority
- GB
- United Kingdom
- Prior art keywords
- crossunders
- soj
- high density
- integrated circuits
- density cmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W20/01—
-
- H10W20/20—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6814879A | 1979-08-20 | 1979-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2056771A GB2056771A (en) | 1981-03-18 |
| GB2056771B true GB2056771B (en) | 1983-10-19 |
Family
ID=22080712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8025630A Expired GB2056771B (en) | 1979-08-20 | 1980-08-06 | Crossunders for high density cmos/soj integrated circuits |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5632770A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3030753A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2463977A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB2056771B (cg-RX-API-DMAC10.html) |
| IT (1) | IT1131790B (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3138950A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierter halbleiterspeicher |
| JPS61127174A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 半導体装置の製造方法 |
| DE19604776A1 (de) * | 1996-02-09 | 1997-08-14 | Siemens Ag | Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| US3958266A (en) * | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
| CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
| JPS52139388A (en) * | 1976-05-17 | 1977-11-21 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device |
-
1980
- 1980-07-30 IT IT23809/80A patent/IT1131790B/it active
- 1980-08-06 GB GB8025630A patent/GB2056771B/en not_active Expired
- 1980-08-14 DE DE19803030753 patent/DE3030753A1/de not_active Withdrawn
- 1980-08-14 JP JP11227380A patent/JPS5632770A/ja active Granted
- 1980-08-19 FR FR8018154A patent/FR2463977A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2463977B1 (cg-RX-API-DMAC10.html) | 1983-02-04 |
| IT1131790B (it) | 1986-06-25 |
| FR2463977A1 (fr) | 1981-02-27 |
| IT8023809A0 (it) | 1980-07-30 |
| DE3030753A1 (de) | 1981-03-12 |
| JPH0478011B2 (cg-RX-API-DMAC10.html) | 1992-12-10 |
| JPS5632770A (en) | 1981-04-02 |
| GB2056771A (en) | 1981-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |