GB201222349D0 - Phase control thyristor with improved pattern of local emitter shorts dots - Google Patents
Phase control thyristor with improved pattern of local emitter shorts dotsInfo
- Publication number
- GB201222349D0 GB201222349D0 GBGB1222349.1A GB201222349A GB201222349D0 GB 201222349 D0 GB201222349 D0 GB 201222349D0 GB 201222349 A GB201222349 A GB 201222349A GB 201222349 D0 GB201222349 D0 GB 201222349D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- dots
- phase control
- control thyristor
- improved pattern
- emitter shorts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10166682 | 2010-06-21 | ||
| PCT/EP2011/060329 WO2011161097A2 (en) | 2010-06-21 | 2011-06-21 | Phase control thyristor with improved pattern of local emitter shorts dots |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201222349D0 true GB201222349D0 (en) | 2013-01-23 |
| GB2494086A GB2494086A (en) | 2013-02-27 |
| GB2494086B GB2494086B (en) | 2014-04-23 |
Family
ID=44072519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1222349.1A Active GB2494086B (en) | 2010-06-21 | 2011-06-21 | Phase control thyristor with improved pattern of local emitter shorts dots |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9142656B2 (en) |
| JP (1) | JP5976640B2 (en) |
| KR (1) | KR101679108B1 (en) |
| CN (1) | CN102947939B (en) |
| DE (1) | DE112011102082B4 (en) |
| GB (1) | GB2494086B (en) |
| WO (1) | WO2011161097A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347686A (en) * | 2013-07-30 | 2015-02-11 | 安徽省祁门县黄山电器有限责任公司 | Thyristor chip with high-current increasing rate |
| WO2016016427A1 (en) * | 2014-07-31 | 2016-02-04 | Abb Technology Ag | Phase control thyristor |
| DE202015101476U1 (en) | 2015-03-24 | 2015-04-14 | Abb Technology Ag | Backward blocking thyristor without radiation-induced effects |
| EP3304600B1 (en) | 2015-05-29 | 2018-10-17 | ABB Schweiz AG | Thyristor with improved plasma spreading |
| US10541690B2 (en) | 2016-02-29 | 2020-01-21 | Samsung Electronics Co., Ltd. | Method and device to align phases of clock signals |
| CN107180866B (en) * | 2017-06-15 | 2023-06-02 | 西安派瑞功率半导体变流技术股份有限公司 | Gate of thyristor branch full-distributed N+ amplifier |
| DE102017130330B3 (en) | 2017-12-18 | 2019-02-14 | Semikron Elektronik Gmbh & Co. Kg | Thyristor with a semiconductor body |
| US11056582B2 (en) | 2018-02-13 | 2021-07-06 | Abb Power Grids Switzerland Ag | Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device concept |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1954665U (en) | 1966-10-28 | 1967-02-02 | Just Jahn | MAGNETIC PLANT BOARD. |
| US3681365A (en) | 1968-10-18 | 1972-08-01 | Sandoz Ag | Derivatives of acetic acid |
| US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
| DE1954665A1 (en) * | 1969-10-30 | 1971-05-06 | Licentia Gmbh | Controllable semiconductor rectifier |
| US3906545A (en) * | 1972-01-24 | 1975-09-16 | Licentia Gmbh | Thyristor structure |
| GB1546094A (en) * | 1975-04-11 | 1979-05-16 | Aei Semiconductors Ltd | Thyristors |
| JPS51136290A (en) * | 1975-05-21 | 1976-11-25 | Hitachi Ltd | Short emitter type thyristor |
| JPS5912026B2 (en) * | 1977-10-14 | 1984-03-19 | 株式会社日立製作所 | thyristor |
| CH622127A5 (en) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
| JPS574159A (en) * | 1980-06-09 | 1982-01-09 | Hitachi Ltd | Thyristor |
| DE3032768A1 (en) * | 1980-08-30 | 1982-04-22 | Brown, Boveri & Cie Ag, 6800 Mannheim | Amplifying gate radiative finger electrode thyristor - has interruptions in finger electrode structure bridged by bonded wires |
| JPS58222571A (en) * | 1982-06-19 | 1983-12-24 | Mitsubishi Electric Corp | Thyristor |
| JPS5986260A (en) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | Gate turn-off thyristor |
| US4595939A (en) * | 1982-11-15 | 1986-06-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Radiation-controllable thyristor with multiple, non-concentric amplified stages |
| JPS59132167A (en) * | 1983-01-18 | 1984-07-30 | Toshiba Corp | Semiconductor device |
| US4605451A (en) * | 1984-08-08 | 1986-08-12 | Westinghouse Brake And Signal Company Limited | Process for making thyristor devices |
| JPH0691246B2 (en) * | 1985-09-02 | 1994-11-14 | 株式会社日立製作所 | Semiconductor device |
| JPH0194661A (en) * | 1987-10-06 | 1989-04-13 | Toshiba Corp | Gate turn-off thyristor |
| FR2617640B1 (en) * | 1987-07-03 | 1990-04-06 | Thomson Semiconducteurs | THYRISTOR OR TRIAC WITH EXTENDED SHORTBAND STRIPS |
| FR2638022B1 (en) * | 1988-10-14 | 1992-08-28 | Sgs Thomson Microelectronics | ASYMMETRICAL THYRISTOR WITH EXTINGUISHING BY THE TRIGGER, PROVIDED WITH ANODE SHORT CIRCUITS AND HAVING A REDUCED TRIP CURRENT |
| JPH05145063A (en) * | 1991-11-19 | 1993-06-11 | Nippon Inter Electronics Corp | Gate turn-off thyristor |
| JPH08316456A (en) * | 1995-05-22 | 1996-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Surge protecting element |
| JPH10135445A (en) * | 1996-11-01 | 1998-05-22 | Toshiba Corp | Semiconductor device |
| JP2000294765A (en) * | 1999-04-08 | 2000-10-20 | Nippon Inter Electronics Corp | Semiconductor controlled rectifying device |
| US6407901B1 (en) * | 1999-04-19 | 2002-06-18 | Teccor Electronics, Lp | Semiconductor device providing overvoltage and overcurrent protection for a line |
-
2011
- 2011-06-21 JP JP2013515860A patent/JP5976640B2/en active Active
- 2011-06-21 GB GB1222349.1A patent/GB2494086B/en active Active
- 2011-06-21 WO PCT/EP2011/060329 patent/WO2011161097A2/en active Application Filing
- 2011-06-21 DE DE112011102082.1T patent/DE112011102082B4/en active Active
- 2011-06-21 CN CN201180030649.2A patent/CN102947939B/en active Active
- 2011-06-21 KR KR1020137001485A patent/KR101679108B1/en active IP Right Grant
-
2012
- 2012-12-19 US US13/720,106 patent/US9142656B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011161097A3 (en) | 2012-08-30 |
| JP2013534051A (en) | 2013-08-29 |
| GB2494086B (en) | 2014-04-23 |
| CN102947939A (en) | 2013-02-27 |
| GB2494086A (en) | 2013-02-27 |
| JP5976640B2 (en) | 2016-08-23 |
| KR20130026479A (en) | 2013-03-13 |
| DE112011102082B4 (en) | 2022-05-05 |
| US9142656B2 (en) | 2015-09-22 |
| US20130105857A1 (en) | 2013-05-02 |
| CN102947939B (en) | 2015-11-25 |
| KR101679108B1 (en) | 2016-11-23 |
| WO2011161097A2 (en) | 2011-12-29 |
| DE112011102082T5 (en) | 2013-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20180426 AND 20180502 |
|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20240718 AND 20240724 |