GB2010577A - Preparing specimens using an ion beam - Google Patents

Preparing specimens using an ion beam

Info

Publication number
GB2010577A
GB2010577A GB7844005A GB7844005A GB2010577A GB 2010577 A GB2010577 A GB 2010577A GB 7844005 A GB7844005 A GB 7844005A GB 7844005 A GB7844005 A GB 7844005A GB 2010577 A GB2010577 A GB 2010577A
Authority
GB
United Kingdom
Prior art keywords
specimen
ion beam
ion
irradiated
required thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7844005A
Other versions
GB2010577B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Tech Ltd
Original Assignee
Ion Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Tech Ltd filed Critical Ion Tech Ltd
Priority to GB7844005A priority Critical patent/GB2010577B/en
Publication of GB2010577A publication Critical patent/GB2010577A/en
Application granted granted Critical
Publication of GB2010577B publication Critical patent/GB2010577B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

Specimens are prepared for examination by transmission electron microscopy techniques by making them suitably thin by using an ion source which is cooled so that the specimen can be placed close to the cathode of the ion source and the concentration of the beam impinging on the specimen to thin it is increased whereby to improve the rate at which the specimen is thinned to a required thickness without deleteriously affecting its structure. The specimen may be held stationary or may be rotated and be so disposed that the ion beam impinges normally or at any convenient angle, e.g. 60 DEG , thereto. Initially, one side of the specimen may be irradiated by the ion beam for a short while, the specimen then being reversed and the other side irradiated to the required thickness, which may be determined by monitoring the ion current penetrating the specimen.
GB7844005A 1977-11-07 1978-11-10 Preparation of materials for examination of transmission electron microscopy techniques Expired GB2010577B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7844005A GB2010577B (en) 1977-11-07 1978-11-10 Preparation of materials for examination of transmission electron microscopy techniques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4631177 1977-11-07
GB7844005A GB2010577B (en) 1977-11-07 1978-11-10 Preparation of materials for examination of transmission electron microscopy techniques

Publications (2)

Publication Number Publication Date
GB2010577A true GB2010577A (en) 1979-06-27
GB2010577B GB2010577B (en) 1982-05-06

Family

ID=26265789

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7844005A Expired GB2010577B (en) 1977-11-07 1978-11-10 Preparation of materials for examination of transmission electron microscopy techniques

Country Status (1)

Country Link
GB (1) GB2010577B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2503367A1 (en) * 1981-03-31 1982-10-08 Ion Tech Ltd PROCESS AND DEVICE FOR PREPARING SAMPLES FOR EXAMINATION BY ELECTRON MICROSCOPE
EP0141272A1 (en) * 1983-10-12 1985-05-15 Magyar Tudományos Akadémia Müszaki Fizikai Kutato Intézete Apparatus for processing solid state samples with ion beams
GB2227601A (en) * 1988-12-01 1990-08-01 Seiko Instr Inc "Preparing a micro-section in a sample for observation"
EP0435271A2 (en) * 1989-12-26 1991-07-03 Sharp Kabushiki Kaisha An apparatus and a method for checking a semiconductor
EP0687897A1 (en) * 1994-06-14 1995-12-20 Hitachi, Ltd. Method for making specimen and apparatus thereof
AT509608A4 (en) * 2010-12-23 2011-10-15 Leica Mikrosysteme Gmbh DEVICE AND METHOD FOR COOLING SAMPLES DURING ONE ION BEAM PREPARATION
CN111208153A (en) * 2020-01-20 2020-05-29 航天科工防御技术研究试验中心 Tin-based lead-free welding spot transmission sample and preparation method thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2503367A1 (en) * 1981-03-31 1982-10-08 Ion Tech Ltd PROCESS AND DEVICE FOR PREPARING SAMPLES FOR EXAMINATION BY ELECTRON MICROSCOPE
EP0141272A1 (en) * 1983-10-12 1985-05-15 Magyar Tudományos Akadémia Müszaki Fizikai Kutato Intézete Apparatus for processing solid state samples with ion beams
GB2227601A (en) * 1988-12-01 1990-08-01 Seiko Instr Inc "Preparing a micro-section in a sample for observation"
GB2227601B (en) * 1988-12-01 1993-02-24 Seiko Instr Inc Method of forming a micro-section
EP0435271A2 (en) * 1989-12-26 1991-07-03 Sharp Kabushiki Kaisha An apparatus and a method for checking a semiconductor
EP0435271B1 (en) * 1989-12-26 1997-05-07 Sharp Kabushiki Kaisha An apparatus and a method for checking a semiconductor
EP0687897A1 (en) * 1994-06-14 1995-12-20 Hitachi, Ltd. Method for making specimen and apparatus thereof
US5656811A (en) * 1994-06-14 1997-08-12 Hitachi, Ltd. Method for making specimen and apparatus thereof
AT509608A4 (en) * 2010-12-23 2011-10-15 Leica Mikrosysteme Gmbh DEVICE AND METHOD FOR COOLING SAMPLES DURING ONE ION BEAM PREPARATION
AT509608B1 (en) * 2010-12-23 2011-10-15 Leica Mikrosysteme Gmbh DEVICE AND METHOD FOR COOLING SAMPLES DURING ONE ION BEAM PREPARATION
CN111208153A (en) * 2020-01-20 2020-05-29 航天科工防御技术研究试验中心 Tin-based lead-free welding spot transmission sample and preparation method thereof
CN111208153B (en) * 2020-01-20 2024-02-27 航天科工防御技术研究试验中心 Tin-based lead-free welding spot transmission sample and preparation method thereof

Also Published As

Publication number Publication date
GB2010577B (en) 1982-05-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee