GB2007055B - Circuit arrangement - Google Patents
Circuit arrangementInfo
- Publication number
- GB2007055B GB2007055B GB7840526A GB7840526A GB2007055B GB 2007055 B GB2007055 B GB 2007055B GB 7840526 A GB7840526 A GB 7840526A GB 7840526 A GB7840526 A GB 7840526A GB 2007055 B GB2007055 B GB 2007055B
- Authority
- GB
- United Kingdom
- Prior art keywords
- circuit arrangement
- arrangement
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
- 
        - H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
 
- 
        - G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
 
- 
        - H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
 
- 
        - H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
 
- 
        - H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
 
- 
        - H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
 
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Measurement Of Current Or Voltage (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| GB7840526A GB2007055B (en) | 1977-10-21 | 1978-10-13 | Circuit arrangement | 
| US05/953,206 US4283641A (en) | 1977-10-21 | 1978-10-20 | Feedback biasing circuit arrangement for transistor amplifier | 
| DE19782845761 DE2845761A1 (de) | 1977-10-21 | 1978-10-20 | Schaltungsanordnung | 
| JP12940978A JPS5499548A (en) | 1977-10-21 | 1978-10-20 | Circuit device | 
| FR7829950A FR2406849A1 (fr) | 1977-10-21 | 1978-10-20 | Circuit de polarisation a courant constant | 
| NL7810556A NL7810556A (nl) | 1977-10-21 | 1978-10-23 | Circuit. | 
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| GB4386677 | 1977-10-21 | ||
| GB7840526A GB2007055B (en) | 1977-10-21 | 1978-10-13 | Circuit arrangement | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| GB2007055A GB2007055A (en) | 1979-05-10 | 
| GB2007055B true GB2007055B (en) | 1982-08-18 | 
Family
ID=26265254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| GB7840526A Expired GB2007055B (en) | 1977-10-21 | 1978-10-13 | Circuit arrangement | 
Country Status (6)
| Country | Link | 
|---|---|
| US (1) | US4283641A (OSRAM) | 
| JP (1) | JPS5499548A (OSRAM) | 
| DE (1) | DE2845761A1 (OSRAM) | 
| FR (1) | FR2406849A1 (OSRAM) | 
| GB (1) | GB2007055B (OSRAM) | 
| NL (1) | NL7810556A (OSRAM) | 
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| DE3049187A1 (de) * | 1980-01-08 | 1981-09-10 | Honeywell Inc., Minneapolis, Minn. | Verstaerker | 
| JPS57106871A (en) * | 1980-12-24 | 1982-07-02 | Hitachi Ltd | Current detecting circuit | 
| JPS58172721A (ja) * | 1982-04-05 | 1983-10-11 | Toshiba Corp | トランジスタ回路 | 
| US4547881A (en) * | 1983-11-09 | 1985-10-15 | Advanced Micro Devices, Inc. | ECL Logic circuit with a circuit for dynamically switchable low drop current source | 
| GB2186452B (en) * | 1986-02-07 | 1989-12-06 | Plessey Co Plc | A bias current circuit,and cascade and ring circuits incorporating same | 
| US4736126A (en) * | 1986-12-24 | 1988-04-05 | Motorola Inc. | Trimmable current source | 
| US5245222A (en) * | 1992-02-28 | 1993-09-14 | Sgs-Thomson Microelectronics, Inc. | Method and apparatus for buffering electrical signals | 
| EP0632357A1 (en) * | 1993-06-30 | 1995-01-04 | STMicroelectronics S.r.l. | Voltage reference circuit with programmable temperature coefficient | 
| US5627461A (en) * | 1993-12-08 | 1997-05-06 | Nec Corporation | Reference current circuit capable of preventing occurrence of a difference collector current which is caused by early voltage effect | 
| GB2317718B (en) * | 1993-12-08 | 1998-06-10 | Nec Corp | Reference current circuit and reference voltage circuit | 
| DE19732437C1 (de) * | 1997-07-28 | 1998-12-24 | Siemens Ag | Transistor-Verstärkerstufe | 
| EP2314700A1 (en) * | 1999-01-28 | 2011-04-27 | Medical College of Georgia Research Institute, Inc | Composition and method for in vivo and in vitro attenuation of gene expression using double stranded RNA | 
| US6313705B1 (en) | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier | 
| JP4726735B2 (ja) * | 2006-08-11 | 2011-07-20 | マスプロ電工株式会社 | アンテナ | 
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US3659121A (en) * | 1970-11-16 | 1972-04-25 | Motorola Inc | Constant current source | 
| JPS4854460A (OSRAM) * | 1971-11-11 | 1973-07-31 | ||
| US3721893A (en) * | 1972-05-30 | 1973-03-20 | Motorola Inc | Stable current reference circuit with beta compensation | 
| JPS5312350B2 (OSRAM) * | 1972-06-05 | 1978-04-28 | ||
| NL7214136A (OSRAM) * | 1972-10-19 | 1974-04-23 | ||
| JPS5132257A (OSRAM) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd | |
| JPS52114946A (en) * | 1976-03-24 | 1977-09-27 | Hitachi Ltd | Constant-voltage circuit | 
- 
        1978
        - 1978-10-13 GB GB7840526A patent/GB2007055B/en not_active Expired
- 1978-10-20 FR FR7829950A patent/FR2406849A1/fr active Granted
- 1978-10-20 JP JP12940978A patent/JPS5499548A/ja active Granted
- 1978-10-20 DE DE19782845761 patent/DE2845761A1/de not_active Ceased
- 1978-10-20 US US05/953,206 patent/US4283641A/en not_active Expired - Lifetime
- 1978-10-23 NL NL7810556A patent/NL7810556A/xx not_active Application Discontinuation
 
Also Published As
| Publication number | Publication date | 
|---|---|
| US4283641A (en) | 1981-08-11 | 
| NL7810556A (nl) | 1979-04-24 | 
| FR2406849B1 (OSRAM) | 1982-11-12 | 
| JPS6211529B2 (OSRAM) | 1987-03-13 | 
| FR2406849A1 (fr) | 1979-05-18 | 
| JPS5499548A (en) | 1979-08-06 | 
| GB2007055A (en) | 1979-05-10 | 
| DE2845761A1 (de) | 1979-04-26 | 
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Legal Events
| Date | Code | Title | Description | 
|---|---|---|---|
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |