GB1593063A - Bipolar lateral transistor - Google Patents
Bipolar lateral transistor Download PDFInfo
- Publication number
- GB1593063A GB1593063A GB3900577A GB3900577A GB1593063A GB 1593063 A GB1593063 A GB 1593063A GB 3900577 A GB3900577 A GB 3900577A GB 3900577 A GB3900577 A GB 3900577A GB 1593063 A GB1593063 A GB 1593063A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- transistor
- emitter
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7628318A FR2365213A1 (fr) | 1976-09-21 | 1976-09-21 | Transistor bipolaire lateral et circuits utilisant ce transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1593063A true GB1593063A (en) | 1981-07-15 |
Family
ID=9177896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3900577A Expired GB1593063A (en) | 1976-09-21 | 1977-09-19 | Bipolar lateral transistor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6028395B2 (ja) |
| DE (1) | DE2742361A1 (ja) |
| FR (1) | FR2365213A1 (ja) |
| GB (1) | GB1593063A (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50105209A (ja) * | 1974-01-25 | 1975-08-19 | ||
| DE2835930C2 (de) * | 1978-08-17 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor |
| JPS6165762U (ja) * | 1984-10-03 | 1986-05-06 | ||
| FR2592525B1 (fr) * | 1985-12-31 | 1988-02-12 | Radiotechnique Compelec | Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant |
| EP0782197B1 (en) * | 1995-12-29 | 2001-06-06 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated electronic device with reduced parasitic currents, and corresponding method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3967307A (en) * | 1973-07-30 | 1976-06-29 | Signetics Corporation | Lateral bipolar transistor for integrated circuits and method for forming the same |
-
1976
- 1976-09-21 FR FR7628318A patent/FR2365213A1/fr active Granted
-
1977
- 1977-09-19 GB GB3900577A patent/GB1593063A/en not_active Expired
- 1977-09-20 DE DE19772742361 patent/DE2742361A1/de active Granted
- 1977-09-20 JP JP52113174A patent/JPS6028395B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5339082A (en) | 1978-04-10 |
| FR2365213B1 (ja) | 1979-01-12 |
| DE2742361A1 (de) | 1978-03-23 |
| JPS6028395B2 (ja) | 1985-07-04 |
| FR2365213A1 (fr) | 1978-04-14 |
| DE2742361C2 (ja) | 1989-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |