GB1593063A - Bipolar lateral transistor - Google Patents
Bipolar lateral transistor Download PDFInfo
- Publication number
- GB1593063A GB1593063A GB39005/77A GB3900577A GB1593063A GB 1593063 A GB1593063 A GB 1593063A GB 39005/77 A GB39005/77 A GB 39005/77A GB 3900577 A GB3900577 A GB 3900577A GB 1593063 A GB1593063 A GB 1593063A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- transistor
- emitter
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7628318A FR2365213A1 (fr) | 1976-09-21 | 1976-09-21 | Transistor bipolaire lateral et circuits utilisant ce transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1593063A true GB1593063A (en) | 1981-07-15 |
Family
ID=9177896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39005/77A Expired GB1593063A (en) | 1976-09-21 | 1977-09-19 | Bipolar lateral transistor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6028395B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2742361A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2365213A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1593063A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50105209A (enrdf_load_stackoverflow) * | 1974-01-25 | 1975-08-19 | ||
| DE2835930C2 (de) * | 1978-08-17 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor |
| JPS6165762U (enrdf_load_stackoverflow) * | 1984-10-03 | 1986-05-06 | ||
| FR2592525B1 (fr) * | 1985-12-31 | 1988-02-12 | Radiotechnique Compelec | Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant |
| EP0782197B1 (en) * | 1995-12-29 | 2001-06-06 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated electronic device with reduced parasitic currents, and corresponding method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3967307A (en) * | 1973-07-30 | 1976-06-29 | Signetics Corporation | Lateral bipolar transistor for integrated circuits and method for forming the same |
-
1976
- 1976-09-21 FR FR7628318A patent/FR2365213A1/fr active Granted
-
1977
- 1977-09-19 GB GB39005/77A patent/GB1593063A/en not_active Expired
- 1977-09-20 DE DE19772742361 patent/DE2742361A1/de active Granted
- 1977-09-20 JP JP52113174A patent/JPS6028395B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2365213A1 (fr) | 1978-04-14 |
| FR2365213B1 (enrdf_load_stackoverflow) | 1979-01-12 |
| DE2742361A1 (de) | 1978-03-23 |
| JPS5339082A (en) | 1978-04-10 |
| DE2742361C2 (enrdf_load_stackoverflow) | 1989-03-09 |
| JPS6028395B2 (ja) | 1985-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |