GB1593063A - Bipolar lateral transistor - Google Patents

Bipolar lateral transistor Download PDF

Info

Publication number
GB1593063A
GB1593063A GB39005/77A GB3900577A GB1593063A GB 1593063 A GB1593063 A GB 1593063A GB 39005/77 A GB39005/77 A GB 39005/77A GB 3900577 A GB3900577 A GB 3900577A GB 1593063 A GB1593063 A GB 1593063A
Authority
GB
United Kingdom
Prior art keywords
zone
transistor
emitter
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39005/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1593063A publication Critical patent/GB1593063A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB39005/77A 1976-09-21 1977-09-19 Bipolar lateral transistor Expired GB1593063A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628318A FR2365213A1 (fr) 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor

Publications (1)

Publication Number Publication Date
GB1593063A true GB1593063A (en) 1981-07-15

Family

ID=9177896

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39005/77A Expired GB1593063A (en) 1976-09-21 1977-09-19 Bipolar lateral transistor

Country Status (4)

Country Link
JP (1) JPS6028395B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2742361A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2365213A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1593063A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105209A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-01-25 1975-08-19
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
JPS6165762U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1984-10-03 1986-05-06
FR2592525B1 (fr) * 1985-12-31 1988-02-12 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
DE69521210T2 (de) * 1995-12-29 2001-11-22 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integriertes Elektronikbauteil mit verringerten parasitären Strömen und Verfahren dafür

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same

Also Published As

Publication number Publication date
JPS5339082A (en) 1978-04-10
FR2365213B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-01-12
FR2365213A1 (fr) 1978-04-14
JPS6028395B2 (ja) 1985-07-04
DE2742361A1 (de) 1978-03-23
DE2742361C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-03-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee